有鑒於III-V族系列材料具有高速和微波特性，以砷化鎵系列為主之異質接面雙極性電晶體和高電子移動率電晶體在積體電路應用上皆已蓬勃發展，而進一步地將兩元件整合將有助於積體電路的成本掌控和增加電路設計的靈活性。
本論文中，我們利用低壓有機金屬化學氣相沈積法成長及研製出以砷化鎵系列為主的雙極性-場效電晶體，設計內容包括光罩佈局、製程步驟、蝕刻溶液配方和沈積金屬等等。本文探討部分製程參數不同時，對於元件特性的影響，並選出元件最佳化參數。
在元件完成之後，在不同溫度下的電性量測，包含77K到450K之間，可明顯看出高溫和低溫量測出的特性趨勢並非完全一致，在異質接面雙極性電晶體特性之探討包含電流增益、補償電壓、基極-射極和基極-集極二極體的導通和崩潰電壓。而在高載子移動率電晶體方面包含電壓增益、臨界電壓、轉導和閘極-源極二極體的導通電壓和閘極漏電流亦加以探討。在溫度的變化下，其中影響的因素和機制會使特性呈現正和負溫度相依性。

Due to excellent high-speed and microwave performance, the fabrication technologies of GaAs-based heterojunction bipolar transistors and high electron mobility transistors have been progressed rapidly over the past years. Modern application requirements and size limitations cause the integration of these two kinds of devices. This gives the additional freedom in the design of advanced power amplifiers and low cost integrated circuit.
In this thesis, we focus on the fabrication of heterojunction bipolar transistors and high electron mobility transistors on the same substrate and discussion of the device characteristics. We process that merged GaAs-based heterojunction bipolar transistors with high electron mobility transistors in the collector layers. To integrate high electron mobility transistors into the collector, the channel of high electron mobility transistors is placed below the highly conductive sub-collector. On the other hand, we also investigated and demonstrated the temperature-dependent characteristics of GaAs-based bipolar-field-effect transistors at the high temperature and low temperature. Temperature-dependent two-and three-terminal measurements suggest that different mechanisms dominate device characteristics trends at different temperature regimes.

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