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Investigation of InAlAs/InxGa1-xAs Metamorphic High Electron Mobility Transistors (MHEMT’s) With Pseudomorphic and Symmetrically-graded Channels
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Institute of Microelectronics
/93/ Master
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Author:
Lin, San-Fu
Advisor:
Hsu, Wei-Chou
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In this thesis, the characteristics of the In0.425Al0.575As/InxGa1-xAs metamorphic high electron...
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Clicks: 235
Downloads: 1
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2
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Characteristics of InAlGaAs/InGaAs/InAlGaAs Heterostructure Field-Effect Transistors
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3
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Study of Surfactant-Like Sb in Heterojunction Field Effect Transistor
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Institute of Microelectronics
/95/ Master
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Author:
Hu, Po-Jung
Advisor:
Hsu, W. C.
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We suggest two ways to improve thermal stability in this study. First, a high electron-mobility t...
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Clicks: 193
Downloads: 2
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4
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AlGaN/GaN High Electron Mobility Transistor for Sensor Application
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5
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ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS AS
pH - SENSITIVE DETECTOR
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6
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Study of Growing High-Quality Metamorphic Buffer Layer by MOCVD and Selective Etching Process Technology for High Performance HEMT Applications
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7
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MOVPE-grown InGaAsN and Device Applications
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Institute of Microelectronics
/94/ Doctor
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Author:
Hsu, Shuo-Hsien
Advisor:
Su, Yan-Kuin
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In this dissertation, the III-N-V alloys and their applications on optoelectronic devices have be...
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Clicks: 245
Downloads: 2
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8
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Investigations on Relieving Kink Effects of InAlAs/InGaAs High Electron Mobility Transistors
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9
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Critical Process Development in Power AlGaN/GaN MIS-HEMTs and p-GaN HEMTs
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10
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Analysis of Different Nano Fin Width in AlGaN/GaN heterostructure FinFET
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Department of Photonics
/108/ Master
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Author:
Tsai, Meng-Chieh
Advisor:
Lai, Wei-Chih
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Three types of AlGaN / GaN fin-shaped field effect transistors (FinFETs) on sapphire substrate, w...
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Clicks: 289
Downloads: 11
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