本實驗首先在不銹鋼基板上生成不同厚度的氧化鋁阻絕層，以SIMS確認其阻絕能力後，在其上濺鍍一層鉬背電極，用四點探針測量其阻抗值以及使用AFM測定其表面粗糙度，以便與生成在玻璃上的鍍膜做比較。隨後對不同阻絕層厚度的基板做循環伏安法的電化學分析，了解在不同阻絕層厚度下的基板是否會造成與玻璃上不同的還原機制與差異，以方便控制日後的電鍍條件；改變電鍍溶液中的成份濃度並變化熱處理持溫時間，使用EDS確認其成分，並利用FE-SEM來觀察CIS薄膜表面的微結構變化，XRD來分析CuInSe2的結晶性強弱變化，並用拉曼光譜來做輔助有無二次相的存在。實驗結果顯示，氧化鋁層在300nm的時候已經可以有效的阻隔來自不銹鋼基板的鐵、鉻的擴散，且由AFM可得知隨著氧化鋁阻絕層的厚度漸增，其表面的粗糙度會慢慢變低。基板表面的粗糙度隨著氧化鋁厚度的變厚而降低，電阻率也隨之減小。由拉曼光譜以及XRD分析發現氧化鋁層較厚的基板在長時間退火之後較氧化鋁厚度薄的基板容易產生二次雜相，且結晶性不如氧化鋁厚度500nm的試片。由SEM表面結構分析可以發現氧化鋁厚度500nm的樣本在長時間的熱退火之後能夠產生晶界相當明顯的大顆粒結晶。

Stainless steel substrate will be sputtered with Al2O3 insulation layer by different thickness, examining by SIMS to confirm that Fe and Cr from substrate will not contaminate the whole solar cell. Atomic force microscope (AFM) and four point probe will be used to measure the roughness and the resistance of the Mo back-contact sputtered on the substrate.
Cyclic voltammetry (CV) was utilized to examine the reaction potential of the ions in the solution, and this made us know the mechanism of the co- eletrodeposition between substrates with different thickness of Al2O3 layer. Energy dispersive spectroscopy (EDS) was used to estimate the composition of the CuInSe2 thin films. In the meanwhile the microstructure was observed by Multi- functional Field-Emission Scanning Electron Microscope (FE-SEM). The crystal structure of the thin films was identified by powder x-ray diffraction (XRD). Raman spectroscopy was applied for analysis of second phase.
Based on SIMS analysis, the contamination of Fe and Cr stop by Al2O3 barrier with 300nm thickness. From AFM analysis and four point probe measurement, we know that the surface roughness and resistance will decrease while the barrier layer goes thicker. From Raman spectroscopy and XRD, we find that the substrate with thicker Al2O3 barrier layer is easy to generate second phase, and the crystal structure of CuInSe2 thin film is worse than the thinner one after long time annealing process. Substrate with 500nm Al2O3 barrier layer has better CuInSe2 structure than substrate with thicker Al2O3 layer.

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