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研究生: 包佳正
Pao, Chia-Cheng
論文名稱: 具低ESR電容之低壓降調節器的設計方法與優化
Design Methodology and Optimization for Low-dropout Regulators with Low ESR Capacitance
指導教授: 蔡建泓
Tsai, Chien-Hung
學位類別: 碩士
Master
系所名稱: 電機資訊學院 - 電機工程學系
Department of Electrical Engineering
論文出版年: 2014
畢業學年度: 103
語文別: 中文
論文頁數: 106
中文關鍵詞: 低壓降調節器行為建模Verilog-ATop-down設計方法gm/ID設計方法
外文關鍵詞: Low-dropout regulator, Behavioral modeling, Verilog-A, Top-down methodology, gm/ID methodology
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  • 本論文提出應用於具低ESR電容之低壓降調節器的由上至下設計方法,結合系統行為建模、系統層級設計與電路優化技術於一完整流程。
    首先,系統行為模型採納Verilog-A類比硬體描述語言與電晶體元件模型結合成一混合層級系統模型,提供了具低ESR電容低壓降調節器之重要特性的正確行為建模。第二,應用所提出之混合層級模型,透過提出之系統層級設計流程可將系統效能參數分離,幫助設計者權衡設計考量,減少設計反覆的發生。第三,應用於低壓降調節器中誤差放大器設計的gm/ID技術將被提出,在達成目標規格的同時減少電流消耗。
    所提出之設計方法將應用在輸入電壓3.3V、輸出電壓2.8V以及最大輸出電流100mA之設計範例,系統穩定性在0mΩ至30mΩ的電容ESR範圍得到確保。此外,由於導通元件設計對於低壓降調節器相當重要,本論文亦探討飽和區與線性區的導通元件設計之差異,因此針對同一目標規格的兩個設計範例將被實作與驗證。模擬結果顯示所提出之設計方法能有效實現規格導向的流程,除了加速開發與除錯,並且調節器效能得到優化。

    This thesis proposes a top-down design methodology applied to low-dropout regulators with low ESR capacitance. It includes system behavioral modeling, system-level design and circuit optimization technique in a complete flow.
    Firstly, the system behavioral model adopts Verilog-A, an analog hardware description language, and the transistor device model together to create a mixed-level system model, providing correct modeling capabilities of important characteristics of low-dropout regulators with low ESR capacitance. Secondly, with the proposed mixed-level model, the proposed system-level design flow separates the performance parameters of the system. This helps designers consider the design trade off and reduce design iterations. Thirdly, the gm/ID technique which is applied to error amplifier design in low-dropout regulator is proposed to reduce current consumption while achieving objective specifications simultaneously.
    The proposed methodology was applied to the design case of low-dropout regulator with supply voltage of 3.3V, output voltage of 2.8V and maximum load current of 100mA and the system stability in the capacitance ESR range between 0mΩ and 30mΩ was guaranteed. Moreover, due to the importance of the pass element design to low-dropout regulators, this thesis also discusses the difference between the saturation region approach and the linear region approach of pass element design, so both approaches were implemented and verified due to the same target specifications. Simulation results reveal that the proposed methodology realized specification-oriented flow which not only speeds development and debugging but also optimizes the performance of the regulator.

    摘要 III Abstract IV 目錄 VIII 表目錄 XI 圖目錄 XII 第一章 緒論 1 1.1 研究背景與動機 1 1.2 相關研究與發展 4 1.3 目標與貢獻 5 1.4 論文架構簡介 6 第二章 低壓降調節器原理及分析 7 2.1 操作原理 7 2.2 穩定性分析 10 2.3 重要規格與特性 14 2.3.1 靜態規格分析 14 2.3.2 動態規格與響應分析 18 2.3.3 頻域規格與響應分析 21 2.4 補償原理與實現方法 23 2.4.1 極零點補償 23 2.4.2 米勒補償 25 2.4.3 利用緩衝器補償 26 2.4.4 比較與討論 27 2.5 低ESR輸出電容衍生問題與對策 28 2.5.1 低ESR應用瓶頸 29 2.5.2 解決方案與技術回顧 29 第三章 由上至下的類比設計方法與gm/ID技術 33 3.1 階層式類比設計與Verilog-A硬體描述語言 33 3.1.1 簡介與EDA設計平台 33 3.1.2 文獻分類與研究現況 38 3.2 使用gm/ID技術優化電路設計 45 3.2.1 原理與優化流程 45 3.2.2 文獻分類與研究現況 52 第四章 低壓降調節器的行為建模與階層式設計 59 4.1 混合層級Verilog-A系統建模 59 4.1.1 誤差操作放大器建模 59 4.1.2 VCCS補償電路建模 66 4.1.3 低壓降調節器系統建模 68 4.2 由上至下系統層級設計流程 69 4.2.1 Step 0: 設計預備 70 4.2.2 Step 1: 導通元件與調節率設計 71 4.2.3 Step 2: 穩定性設計 74 4.2.4 Step 3: 暫態響應設計 76 4.2.5 Step 4: 階層式模擬驗證 78 第五章 具低ESR電容之低壓降調節器設計驗證與電路優化 79 5.1 目標與應用 79 5.2 系統架構與規格 80 5.3 系統層級參數設定與模擬 81 5.4 gm/ID優化流程與電路設計 85 5.4.1 誤差操作放大器 85 5.4.2 VCCS補償電路 93 5.5 階層式模擬驗證 94 5.5.1 頻率響應 95 5.5.2 穩態響應 96 5.5.3 暫態響應 97 5.6 成果比較與討論 97 第六章 結論 100 6.1 總結與貢獻 100 6.2 未來工作與研究方向 100 參考文獻 102

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