近年來，由於碳化矽功率元件的高切換頻率、高工作溫度，及低導通電阻等優點，使其逐漸取代原本以矽功率元件為主之馬達驅動器。雖然碳化矽元件擁有高切換頻率之優點，但同時極大di/dt與dv/dt會影響功率元件誤動作及損毀，因此電路板上之寄生參數將成為首要處理項目。本論文之目標，係以探討碳化矽功率元件應於永磁同步馬達驅動器之寄生參數分析，再透過電路板之總寄生電感及負載大小決定碳化矽功率元件之切換頻率的範圍。
　　本論文使用ANSYS Q3D/Simplorer兩種軟體，前者主要分析電路板中寄生參數、電流分佈與電流密度等是否符合規範，後者整合電路板之SPICE模型、閘極驅動器與碳化矽功率元件之SPICE模型，建立一套高精準度的碳化矽功率元件之永磁同步馬達驅動器電路，且透過模擬雙脈衝測試可求得實際元件上的閘-源極電壓、汲-源極電壓與汲-源極電流，並從模擬結果分析di/dt與dv/dt影響及提出改善方法。本論文亦製作一具碳化矽功率元件之1.5 kW永磁同步馬達驅動器，以實測驗證模擬所得到之分析結果。

　　In recent years, silicon carbide (SiC) power transistor has gradually replaced traditional silicon power transistor in motor driver, due to the high switching frequency, high operating temperature, and low on-resistance of silicon carbide power transistor. Although the silicon carbide power transistor has the advantage in high switching frequency, the large di/dt and dv/dt will affect the malfunction and damage of the power component; in this case, the parasitic parameter on the circuit board will become the primary issue. This thesis presents the parasitic parameter analysis of permanent magnet synchronous motor driver based on silicon carbide power transistor.
　　There are two pieces of software (ANSYS Q3D/Simplorer) applied in this thesis. The former mainly analyzes the parasitic parameters, current distribution and current density of the circuit board while the latter integrates the SPICE model of the circuit board, the SPICE model of the gate driver and silicon carbide power transistor to establish a high-precision permanent magnet synchronous motor driver circuit of silicon carbide power transistor. The gate-source voltage, drain-source voltage, and drain-source current on the actual device can be obtained through the simulation of the double pulse test, and the effects of di/dt and dv/dt can be analyzed from the results.

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