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研究生： 林修賢
Lin, Siou-Sian
論文名稱： 應用於可攜式行動裝置之極低功耗快速暫態低壓降線性穩壓器
An Ultra-Low-Power Fast Transient Low Dropout Regulator for Portable Application
指導教授： 盧達生
Lu, Dar-Sen
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 電機工程學系
Department of Electrical Engineering
論文出版年： 2021
畢業學年度： 109
語文別： 英文
論文頁數： 121
中文關鍵詞： 低壓降線性穩壓器 、快速暫態 、極低功耗
外文關鍵詞： LDO, fast transient, ultra-low-power
相關次數： 點閱：128  下載：13 
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    • 本論文針對手持式行動裝置，提出了一個具有極低功耗及快速暫態效能的低壓降線性穩壓器。系統採用適應性偏壓控制技術，在不影響電流效率的情況下，能夠在重載時有效提升迴路頻寬，並且減少了迴路反應延遲。
    另一方面，由於系統的反應時間受限於功率電晶體閘極端的迴轉率，本論文提出了分裂式前饋路徑以及動態偏壓源極隨耦器這兩個技術提升迴轉電流。前者利用電容耦合小訊號的特性，在暫態發生瞬間提升功率電晶體閘極充電電流；後者則利用源極隨耦器強大的電流驅動能力，透過快速拉動源極隨耦器的偏壓，對功率電晶體閘極快速地放電。透過本論文所提出的兩個技術，大幅改善低壓降線性穩壓器在暫態發生時的迴轉效率。
    本作品採用TSMC 0.18um 1.8V/3.3V 1P6M Mixed Signal製程實現，輸入電壓為1.2V到1.8V，輸出電壓為1V，負載電流範圍20uA到20mA，輸出電容20pF。根據量測結果，在負載變化斜率100ns的條件下，暫態電壓overshoot/undershoot分別為55mV/160mV，靜態電流僅968nA。

    This thesis presents an ultra-low-power fast transient low dropout regulator for portable application. The system can enhance unity gain bandwidth (UGB) and reduce loop response time without degradation of the current efficiency by using adaptive bias control technique. On the other hand, because the system response time is limited to slew rate of gate of power MOSFET, we proposed embedded inverting current buffer (EICB) and dynamic bias cascode current buffer (DBCCB) to increase the slew current. The first exploits the characteristic of AC coupling of a capacitor to momentarily increase the charge current flowing through the gate capacitance of the power MOSFET. the second takes advantage of the strong driving capability of the source follower to help discharge the parasitic capacitance rapidly by dynamically biasing the source follower. With these techniques proposed in this thesis, slew rate can be significantly improved when the voltage spike appear at the output of the low dropout regulator (LDO).
    This prototype is fabricated in TSMC 0.18um 1.8V/3.3V 1P6M Mixed Signal Process. As the prototype operates at the supply voltage range from 1.2V to 1.8V and the load current range from 20uA to 20mA, the output can stabilize at 1V. The loading capacitor is 20pF. The measured result shows that overshoot at output is 55mV and undershoot voltage is 160mV, respectively. Both measured results are under the condition that the load current varies within 100ns. Finally, the quiescent current of the LDO is only 968nA.

    摘要 I Abstract II Acknowledgement IV Content V List of Figure VIII List of Table XII 1 Chapter 1 Introduction 1 1.1 Motivation 1 1.2 Organization 2 2 Chapter 2 Basic of Low Dropout Regulator 3 2.1 Conventional LDO 3 2.1.1 Basic Operation 3 2.1.2 Stability Analysis 4 2.1.3 PSR Analysis 7 2.1.4 Transient Analysis 11 2.2 Capacitor-less LDO 15 2.2.1 Basic Operation 15 2.2.2 Stability Analysis 16 2.2.3 PSR Analysis 18 2.2.4 Transient Analysis 21 2.3 Specification 22 2.4 Comparison and Discussion 24 3 Chapter 3 Fast Transient Technique 26 3.1 FVF-Based LDO 26 3.1.1 Basic Principle of FVF-Based LDO 26 3.1.2 Transient Issues 27 3.1.3 Stability Issues 31 3.2 Adaptive Bias Control 34 3.2.1 Basic Principle of Adaptive Bias Control 35 3.2.2 Transient Issues 35 3.2.3 Stability Issues 37 3.3 Class-AB Error Amplifier 39 3.3.1 Common-Source Error Amplifier 39 3.3.2 Common-Gate Error Amplifier 46 3.4 Comparison and Discussion 48 4 Chapter 4 Frequency Compensation 50 4.1 Basic Compensation of Three-Stage LDO 50 4.2 Wide Bandwidth LDO 57 4.3 Frequency Response Analysis Methodology 64 4.3.1 RHP Zero Cancellation 65 4.3.2 Local Feedback Loop Analysis 69 4.4 Comparison and Discussion 72 5 Chapter 5 Ultra-Low-Power Fast Transient LDO for Portable Application 73 5.1 Architecture and Specification 73 5.2 Principle of Proposed LDO 75 5.2.1 Traditional LDO 76 5.2.2 Embedded Inverting Current Buffer 78 5.2.3 Dynamic Bias Cascode Current Buffer 81 5.3 Small-Signal Analysis 84 5.3.1 Stability Analysis 86 5.3.2 Local Feedback Loop Analysis 89 5.3.3 Adaptive Bias Design 90 5.3.4 Small-Signal Model Verification 92 5.4 Simulation Result 93 5.4.1 Chip Layout and Consideration 93 5.4.2 Steady State 97 5.4.3 Transient Response 98 5.4.4 Frequency Response 101 5.4.5 Comparison and Discussion 102 6 Chapter 6 Experimental Result 103 6.1 Measurement Setup 103 6.2 Experimental Result 105 6.2.1 Steady State 105 6.2.2 Transient Response 107 6.2.3 Comparison and Discussion 111 7 Chapter 7 Conclusion 113 Answer 115 8 Reference 117

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