本論文使用電漿輔助式分子束磊晶在Si(111)基板上成長晶圓等級的六方氮化硼(h-BN)薄膜，並在成長過程中我們使用RHEED即時(in-situ)量測可觀測表面狀態。我們成長β-Si3N4做為成長h-BN的緩衝層(buffer layer)，可從RHEED觀察到β-Si3N4之8×8與 8⁄3×8⁄3重構線條，接著在上方曝入硼原子形成h-BN薄膜，此時 RHEED圖形轉變成h-BN線條。
本論文成長h-BN薄膜層數約3~4層，使用SEM與AFM觀察樣品表面發現有奈米顆粒沉積因為硼沉積太多導致，並使用RHEED與TEM cross section量測分析h-BN之armchair方向晶格長度分別為0.217nm與0.222nm，兩個誤差0.005nm並符合理論值。另外使用XRD與TEM cross section量測分析h-BN之c軸晶格長度分別為0.696±0.003nm與0.744nm兩者誤差0.045nm~0.051nm。另外h-BN薄膜之c軸晶格長度會比塊材h-BN 0.666nm大，可能因為h-BN與Si基板作用關係。

In this study, we grow wafer scale h-BN thin films on Si(111) substrate using plasma-assisted molecular beam epitaxy (PA-MBE) system. We used in situ reflection high-energy electron diffraction (RHEED) to monitor the epitaxial h-BN thin film. Firstly, we grow β-Si3N4 thin films as a buffer layer, then deposited B on the β-Si3N4 surface to grow h-BN thin films having few layer thickness (3~4 monolayers). We analyze h-BN armchair direction lattice length by RHEED and TEM cross section, and the results are 0.217 nm and 0.222 nm respectively. The difference is 0.005 nm and the results correspond to theory value. Also we analyze c-axis lattice constant of h-BN using XRD and cross-sectional TEM, and the results are 0.696±0.003 nm and 0.744 nm respectively. The difference is 0.045 nm~0.051 nm. In addition, the measured c-axis lattice constant of h-BN is larger than bulk h-BN (0.666nm), which indicate that the h-BN grown on Si (111) is under in-plane compress strain.

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