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研究生: 何翊甄
Ho, Yi-Chen
論文名稱: 以溶膠凝膠法製備鋯鈦酸鉛壓電厚膜及積層結構應用於MEMS揚聲器之研究
Study of PZT piezoelectric thick films and multi-layer structure using sol-gel method for MEMS speaker applications.
指導教授: 朱聖緣
Chu, Sheng-Yuan
學位類別: 碩士
Master
系所名稱: 電機資訊學院 - 電機工程學系
Department of Electrical Engineering
論文出版年: 2023
畢業學年度: 111
語文別: 中文
論文頁數: 103
中文關鍵詞: 溶膠凝膠法鋯鈦酸鉛MEMS揚聲器積層壓電
外文關鍵詞: sol-gel, PZT, MEMS speaker, multi-layer, piezoelectric
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  • 摘要 I Extended Abstract II 誌謝 VIII 目錄 IX 表目錄 XIV 圖目錄 XV 1 第一章 緒論 1 1.1 前言 1 1.2 研究動機 2 1.3 論文架構 3 2 第二章 基礎理論與文獻回顧 4 2.1 壓電理論 4 2.1.1 壓電效應(Piezoelectric effects) 4 2.1.2 壓電耦合(Piezoelectric Coupling) 5 2.1.3 壓電方程式 6 2.1.4 介電效應(Dielectric effect) 7 2.1.5 鐵電效應(Ferroelectric effects) 8 2.2 壓電材料 9 2.2.1 材料晶格與晶系 9 2.2.2 壓電材料種類 11 2.2.3 鋯鈦酸鉛(lead zirconium titanate, PZT) 12 2.2.4 積層壓電材料 14 2.3 壓電薄膜 15 2.3.1 薄膜製備方法 15 2.3.2 溶膠凝膠法原理 17 2.3.3 溶膠凝膠法鍍膜方式 17 2.4 聲學理論 19 2.4.1 理想流體介質之三大基本方程式 19 2.4.2 聲學波動方程式 22 2.5 壓電MEMS揚聲器 23 2.5.1 MEMS製程介紹 23 2.5.2 MEMS揚聲器介紹 24 2.5.3 壓電MEMS揚聲器 25 2.5.4 壓電MEMS揚聲器結構 27 2.6 有限元素分析法 28 3 第三章 實驗方法與量測 30 3.1 COMSOL有限元素模擬軟體 30 3.2 實驗流程 33 3.3 實驗藥品 34 3.4 實驗方法 35 3.4.1 基板製備 35 3.4.2 Ti/Pt下電極薄膜沉積 35 3.4.3 溶液配製 36 3.4.4 壓電膜塗佈與熱處理製程 36 3.4.5 黃光微影製程 37 3.4.6 蝕刻製程 37 3.5 實驗儀器 38 3.5.1 磁控濺鍍系統 38 3.5.2 旋轉塗佈機 38 3.5.3 加熱攪拌平台 39 3.5.4 快速熱退火系統(RTA) 39 3.5.5 自動化光阻塗佈及顯影系統(Track) 40 3.5.6 光罩對準曝光系統(Mask aligner) 41 3.5.7 電漿輔助式化學氣象沉積&感應耦合式蝕刻系統(PECVD&ICP) 41 3.6 薄膜材料特性及電性量測設備 42 3.6.1 表面輪廓測量儀(Profile meter) 42 3.6.2 3D雷射顯微鏡(3D Laser Microscopy) 43 3.6.3 X光繞射儀(XRD) 43 3.6.4 場發射掃描式電子顯微鏡(FE-SEM)及能量分散光譜儀(EDS) 44 3.6.5 原子力顯微鏡&壓電力顯微鏡(AFM&PFM ) 45 3.6.6 鐵電分析儀 46 3.6.7 阻抗分析儀 47 3.6.8 同步熱分析 (TGA/DSC) 48 3.7 元件量測環境與設備 49 3.7.1 量測架設 50 3.7.2 製具 51 3.7.3 無響室 52 3.7.4 Brüel & Kjær系統 52 3.7.5 SoundCheck 系統 53 4 第四章 實驗結果與討論 56 4.1 PZT厚膜材料特性分析 56 4.1.1 濃度對薄膜影響 56 4.1.2 TGA熱重分析 57 4.1.3 不同退火時間之 XRD相組成分析 57 4.1.4 不同退火時間鐵電(P-E)特性分析 60 4.1.5 堆疊層數對於XRD相組成分析 61 4.1.6 堆疊層數對於鐵電(P-E)特性分析 62 4.1.7 堆疊層數對於介電(εr-tanδ)特性分析 64 4.1.8 SEM表面形貌分析 66 4.1.9 AFM表面粗糙度分析 67 4.1.10 壓電係數d33分析 69 4.1.11 小節總結 71 4.2 附著層對PZT厚膜之特性影響 72 4.2.1 PZT厚膜於MEMS製程中所遭遇之問題 72 4.2.2 TiO2附著層對於PZT之XRD分析 73 4.2.3 TiO2附著層對於鐵電(P-E)特性之分析 74 4.2.4 小節總結 75 4.3 擴散製程對於具有TiO2附著層之PZT厚膜之特性影響 75 4.3.1 擴散製程對於晶相之XRD分析 75 4.3.2 擴散製程對於鐵電(P-E)特性之分析 77 4.3.3 小節總結 78 4.4 不同結構(單層與積層)對厚膜之特性影響 78 4.4.1 FIB橫截面分析 79 4.4.2 單層與積層結構之XRD晶相分析 80 4.4.3 單層與積層結構之鐵電(P-E)分析 81 4.4.4 擴散製程對積層結構之鐵電(P-E)特性之分析 82 4.4.5 小節總結 83 4.5 壓電式MEMS揚聲器的模擬與驗證分析 83 4.5.1 MEMS揚聲器設計尺寸 84 4.5.2 MEMS揚聲器實際製程結果 86 4.5.3 MEMS揚聲器聲學模擬分析 88 4.5.4 MEMS揚聲器實際量測結果 89 4.5.5 小節總結 93 5 第五章 結論與未來展望 94 5.1 結論 94 5.1.1 PZT壓電厚膜 94 5.1.2 TiO2附著層 94 5.1.3 積層結構 95 5.1.4 壓電MEMS揚聲器 95 5.2 未來展望 95 參考文獻 97

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