簡易檢索 / 詳目顯示

研究生: 陳約翰
Chen, Yueh-Han
論文名稱: 高壓電性AlN:Mo無鉛材料之開發、機制探討及新型ZnO MEMS壓電加速規之設計與不同場域應用:具高頻寬、高靈敏度、低橫向靈敏度
Development of High Piezoelectric AlN:Mo Lead-free Material, Design of ZnO MEMS Piezoelectric Accelerometer:High Frequency Bandwidth, High Sensitivity, Low Transverse Sensitivity
指導教授: 朱聖緣
Chu, Sheng-Yuan
學位類別: 碩士
Master
系所名稱: 電機資訊學院 - 電機工程學系
Department of Electrical Engineering
論文出版年: 2021
畢業學年度: 109
語文別: 中文
論文頁數: 94
中文關鍵詞: 無鉛 、MEMS 、壓電 、加速規 、感測器 、氮化鋁 、薄膜 、摻雜
外文關鍵詞: Lead-free, MEMS, Piezoelectric accelerometer, AlN film, Doping
相關次數: 點閱:176  下載:0 
分享至:
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報
  • 隨著近年工業物聯網(Industrial Internet of Things,IIoT)快速發展,使全球製造業開始往高度自動化及智慧化轉型,因此對於感測器的需求逐漸增加,其中加速規(accelerometer)為被廣泛應用於監控設備運作的慣性運動感測器,因此該元件的開發非常重要。而眾多種類的加速規當中又以MEMS無鉛壓電加速規具有低功耗、體積小、使用環保材料、高性能等多項優點,因此本研究著手進行開發無鉛壓電材料與MEMS無鉛壓電加速規等壓電材料與元件兩大項目。
    材料開發的部分為採用Mo摻雜來提升AlN薄膜的壓電特性,並且透過EDS、XRD、SEM、AFM、PFM等材料分析來探討壓電特性優化的機制與找尋最佳製程參數,其中以AlN:Mo(3.46%)為最佳參數,該材料的壓電係數d33達到7.33pm/V,與未摻雜的AlN相比提升了82.79%,並且產生了鐵電特性,其殘留極化量Pr為0.319 μC /cm2。
    元件開發的部分為設計一款可同時應用於低頻與高頻環境感測的方形MEMS無鉛壓電加速規,透過結構公式與ANSYS軟體模擬該元件的振動模態與共振頻率來進行結構設計,以及採用MEMS製程完成元件的製作,該元件的共振頻率為1740Hz、Z軸靈敏度為1.96mV/g、橫向靈敏度比為0.6%。並且成功實際應用於低頻機械手臂與高頻渦輪幫浦等機台運作狀態感測。

    This study uses Mo doping to improve the piezoelectric properties of AlN film, and through material analysis to explore the mechanism of piezoelectric properties optimization and find the best process parameters. Among them, AlN:Mo (3.46%) is the best parameter. The piezoelectric coefficient d33 reaches 7.33 pm/V, which is 82.79% higher than that of undoped AlN, and it has ferroelectric characteristics, and its residual polarization Pr is 0.319 μC/cm2.
    This study also designed a square MEMS lead-free piezoelectric accelerometer that can be used for both low-frequency and high-frequency environmental sensing. The structural formula and ANSYS software are used to simulate the vibration mode and resonance frequency of the device for structural design, and the use of MEMS The process completes the production of the device. The performance of square MEMS piezoelectric accelerometer is that the resonance frequency is 1740Hz (The simulation error is only 3.3%), the Z-axis sensitivity is 1.96mV/g, and the transverse sensitivity ratio is 0.6%. And successfully applied to low-frequency robotic arm and high-frequency turbo pump and other machine operating status sensing.

    目錄 中文摘要 I EXTENDED ABSTRACT II 誌謝 IX 表目錄 XII 圖目錄 XIII 第一章 緒論 1 1.1 前言 1 1.2 研究動機 3 第二章 理論與文獻回顧 5 2.1 壓電原理 5 2.1.1 壓電效應 5 2.1.2 壓電係數 7 2.2 壓電材料 11 2.2.1 壓電材料晶體結構與特性 11 2.2.2 無鉛壓電薄膜材料 15 2.3 壓電加速規 17 2.3.1 加速規的感測方式 17 2.3.2 壓電加速規類型 20 2.3.3 MEMS壓電加速規結構 22 第三章 實驗與量測 25 3.1 實驗流程簡介 25 3.2 實驗設計 27 3.2.1 壓電材料實驗設計 27 3.2.2 壓電元件實驗設計 30 3.3 壓電材料實驗流程 35 3.3.1 SiO2絕緣層沉積 35 3.3.2 Pt/Ti下電極薄膜沉積 37 3.3.3 AlN:Mo壓電層沉積 38 3.3.4 Pt上電極薄膜沉積 39 3.4 壓電元件實驗流程 40 3.5 製程設備與量測儀器 42 3.5.1 自動化光阻塗佈及顯影系統(Auto Spin Coater and Spin Developer System) 42 3.5.2 光罩對準曝光系統(Mask Aligner System) 43 3.5.3 共濺鍍沉積系統(Co-Sputtering Thin Film Deposition System) 44 3.5.4 感應耦合式電漿蝕刻系統(Inductive Couple Plasma Etcher System,ICP Etcher System) 45 3.5.5 原子力顯微鏡(Atomic Force Microscpoic,AFM) 46 3.5.6 高解析掃描電子顯微鏡(High Resolution Scanning Electron Microscope,HR-SEM) 47 3.5.7 X射線繞射儀(X-ray Diffraction,XRD) 48 3.5.8 奈米壓痕試驗機 (Nanoindenter) 50 3.5.9 壓電力顯微鏡(PiezoresponseForce Microscopy ,PFM) 51 3.5.10 鐵電測試儀(Ferroelectric Tester) 52 3.5.11 加速規性能分析系統(Accelerometer Performance Analysis System) 53 第四章 實驗結果與討論 54 4.1 材料分析 54 4.1.1 摻雜濃度 54 4.1.2 晶體結構 55 4.1.3 壓電係數e33 59 4.1.4 楊氏模數 61 4.1.5 表面形貌 63 4.1.6 鐵電特性 67 4.1.7 壓電係數d33 69 4.2 元件分析 72 4.2.1 方形MEMS壓電加速規實體 72 4.2.2 共振頻率量測 74 4.2.3 Z軸靈敏度量測 76 4.2.4 橫向靈敏度量測 77 4.2.5 方形MEMS壓電加速規於低頻環境感測應用 79 4.2.6 方形MEMS壓電加速規於高頻環境感測應用 83 第五章 結論與未來展望 87 5.1 結論 87 5.1.1 AlN壓電材料 87 5.1.2 MEMS壓電加速規 88 5.2 未來展望 89 第六章 參考資料 90 表目錄 表2- 1七大晶系歸納表 12 表2- 2不同MEMS壓電加速規結構之共振頻與靈敏度 24 表3- 1加速規結構比例 32 表3- 2下電極製程參數 37 表3- 3壓電層製程參數 38 表3- 4上電極製程參數 39 圖目錄 圖2- 1正壓電效應 6 圖2- 2逆電壓效應 6 圖2- 3點群特性歸屬關係圖 14 圖2- 4伺服式加速規[26] 18 圖2- 5電容式加速規[27] 19 圖2- 6壓阻式加速規[28] 19 圖2- 7壓電式加速規[29] 19 圖2- 8塊材型壓電加速規[30] 20 圖2- 9 MEMS壓電加速規[31] 21 圖2- 10懸臂樑型加速規[32] 23 圖2- 11圓環型加速規[33] 23 圖2- 12十字型加速規[34] 23 圖3- 1壓電材料實驗流程 25 圖3- 2壓電元件實驗流程 26 圖3- 3壓電係數e33與c/a raio關係圖[39] 28 圖3- 4楊氏模數與彈性係數C33關係圖[41] 29 圖3- 5 Mo與Sc靶材價格(金額單位為NTD) 29 圖3- 6加速規表面結構示意圖 31 圖3- 7加速規立體結構示意圖 32 圖3- 8 ANSYS模擬方形MEMS壓電加速規之振動模態圖 33 圖3- 9加速規電極分布圖 34 圖3- 10 RCA Clean製程 35 圖3- 11 LPCVD製程 36 圖3- 12方形MEMS壓電加速規製程圖(該圖為元件的左半邊) 41 圖3- 13 自動化光阻塗佈及顯影系統(ELS3608FA) 42 圖3- 14光罩對準曝光系統(Suss MicroTec MA 150CC) 43 圖3- 15共濺鍍薄膜沉積系統(Co-Sputtering Deposition System) 44 圖3- 16感應耦合式電漿蝕刻系統(STS MODEL C001-4) 45 圖3- 17原子力顯微鏡(Bruker Dimension Icon Scanning Probe Microscope) 46 圖3- 18掃描電子顯微鏡(HITACHI SU8000) 47 圖3- 19 X-ray繞射儀(Bruker D8 DISCOVER with GADDS) 49 圖3- 20奈米壓痕試驗機 (Nanoindenter G200) 50 圖3- 21壓電力顯微鏡 51 圖3- 22鐵電測試系統 53 圖3- 23加速規性能分析系統(TMS9100D) 53 圖4- 1 Mo摻雜濃度與濺鍍瓦數關係圖 54 圖4- 2 不同Mo摻雜濃度AlN之XRD分析圖 56 圖4- 3不同Mo摻雜濃度AlN之c軸(002)晶向強度趨勢圖 56 圖4- 4不同Mo摻雜濃度AlN之FWHM趨勢圖 57 圖4- 5 c軸優選取向AlN之IN-PLANE模式XRD分析圖 58 圖4- 6壓電係數e33與c/a ratio關係圖(紅圈為c/a ratio接近1.633範圍)[39] 60 圖4- 7不同Mo摻雜濃度AlN之c/a ratio 60 圖4- 8不同Mo摻雜濃度AlN之應力與位移關係圖 62 圖4- 9不同Mo摻雜濃度AlN之楊氏模數 62 圖4- 10不同Mo摻雜濃度AlN之SEM表面形貌 64 圖4- 11不同Mo摻雜濃度AlN之SEM截面形貌 64 圖4- 12不同Mo摻雜濃度AlN之AFM表面形貌 65 圖4- 13 AlN:Mo(3.46%)之極化與電場關係圖 68 圖4- 14 AlN其c/a ratio與內部參數u趨勢圖[50] 68 圖4- 15不同Mo摻雜濃度AlN之壓電係數d33 70 圖4- 16方形MEMS壓電加速規尺寸與重量 72 圖4- 17方形MEMS壓電加速規實體圖 73 圖4- 18方形MEMS壓電加速規之ANSYS模擬頻率響應 74 圖4- 19方形MEMS壓電加速規之實際頻率響應 75 圖4- 20方形MEMS壓電加速規之實際Z軸靈敏度 76 圖4- 21方形MEMS壓電加速規之實際橫向靈敏度 77 圖4- 22方形MEMS壓電加速規之實際橫向靈敏度比 78 圖4- 23加速規於智慧機械手臂感測示意圖 79 圖4- 24機械手臂不同移動速度之頻率響應圖 80 圖4- 25機械手臂承受不同負載之g值響應圖 81 圖4- 26加速規於渦輪幫浦感測示意圖 83 圖4- 27渦輪幫浦不同轉速之頻率響應圖 84 圖4- 28方形MEMS壓電加速規感測頻率與市售旋轉編碼器感測轉速比對圖 85 圖4- 29渦輪幫浦承受不同負載之g值及頻率響應圖 86

    [1] L. Hylving and U. Schultze, "Evolving the modular layered architecture in digital innovation: The case of the car’s instrument cluster," 2013.
    [2] K. Jono, M. Hashimoto, and M. Esashi, "Electrostatic servo system for multi-axis accelerometers," in Proceedings IEEE Micro Electro Mechanical Systems An Investigation of Micro Structures, Sensors, Actuators, Machines and Robotic Systems, 1994: IEEE, pp. 251-256.
    [3] J. Chae, H. Kulah, and K. Najafi, "A monolithic three-axis micro-g micromachined silicon capacitive accelerometer," Journal of Microelectromechanical systems, vol. 14, no. 2, pp. 235-242, 2005.
    [4] A. Partridge et al., "A high-performance planar piezoresistive accelerometer," Journal of microelectromechanical systems, vol. 9, no. 1, pp. 58-66, 2000.
    [5] N. N. Hewa-Kasakarage, D. Kim, M. L. Kuntzman, and N. A. Hall, "Micromachined piezoelectric accelerometers via epitaxial silicon cantilevers and bulk silicon proof masses," Journal of microelectromechanical systems, vol. 22, no. 6, pp. 1438-1446, 2013.
    [6] K. Brooks et al., "PZT films for micro-pumps," Integrated Ferroelectrics, vol. 8, no. 1-2, pp. 13-23, 1995.
    [7] O. Deubzer, "Reduction of hazardous materials in electrical and electronic equipment," in Waste Electrical and Electronic Equipment (WEEE) Handbook: Elsevier, 2019, pp. 207-230.
    [8] D. Amy, "Discovery of the Piezoelectric Phenomenon: Curie and Langevin," in Research and Development in Breast Ultrasound: Springer, 2005, pp. 1-2.
    [9] K. Uchino, "The development of piezoelectric materials and the new perspective," in Advanced Piezoelectric Materials: Elsevier, 2017, pp. 1-92.
    [10] F. Tasnadi et al., "Origin of the anomalous piezoelectric response in wurtzite Sc x Al 1− x N alloys," Physical review letters, vol. 104, no. 13, p. 137601, 2010.
    [11] Z. Wu and H. Krakauer, "First-principles calculations of piezoelectricity and polarization rotation in Pb (Zr 0.5 Ti 0.5) O 3," Physical Review B, vol. 68, no. 1, p. 014112, 2003.
    [12] A. De Martino, D. Klöpfer, D. Matrasulov, and R. Egger, "Electric-dipole-induced universality for Dirac fermions in graphene," Physical review letters, vol. 112, no. 18, p. 186603, 2014.
    [13] V. A. A. Camarena, E. R. L. Orozco, D. R. Ramírez, and I. D. Morales, "Análisis Estructural de un Compuesto Laminar con MEF," in Memorias del XVI Congreso Internacional Anual de la SOMIM, 2010.
    [14] B. WenXing, Z. ChangChun, and C. WanZhao, "Simulation of Young's modulus of single-walled carbon nanotubes by molecular dynamics," Physica B: Condensed Matter, vol. 352, no. 1-4, pp. 156-163, 2004.
    [15] C. Chen, Y. Shi, Y. S. Zhang, J. Zhu, and Y. Yan, "Size dependence of Young’s modulus in ZnO nanowires," Physical review letters, vol. 96, no. 7, p. 075505, 2006.
    [16] B. Bera and M. D. Sarkar, "Piezoelectric effect, piezotronics and piezophototronics: a review," Imperial Journal of Interdisciplinary Research (IJIR), vol. 2, no. 11, pp. 1407-1410, 2016.
    [17] P. John Jr, Symmetry in coordination chemistry. Elsevier, 2012.
    [18] I. Guy, S. Muensit, and E. Goldys, "Extensional piezoelectric coefficients of gallium nitride and aluminum nitride," Applied Physics Letters, vol. 75, no. 26, pp. 4133-4135, 1999.
    [19] S. G. Ullattil and P. Periyat, "Sol-gel synthesis of titanium dioxide," in Sol-Gel Materials for Energy, Environment and Electronic Applications: Springer, 2017, pp. 271-283.
    [20] A. Sanz-Hervás, M. Clement, E. Iborra, L. Vergara, J. Olivares, and J. Sangrador, "Degradation of the piezoelectric response of sputtered c-axis AlN thin films with traces of non-(0002) x-ray diffraction peaks," Applied Physics Letters, vol. 88, no. 16, p. 161915, 2006.
    [21] A. Teshigahara, K.-y. Hashimoto, and M. Akiyama, "Scandium aluminum nitride: Highly piezoelectric thin film for RF SAW devices in multi GHz range," in 2012 IEEE International Ultrasonics Symposium, 2012: IEEE, pp. 1-5.
    [22] M. Akiyama, T. Kamohara, K. Kano, A. Teshigahara, Y. Takeuchi, and N. Kawahara, "Enhancement of piezoelectric response in scandium aluminum nitride alloy thin films prepared by dual reactive cosputtering," Advanced Materials, vol. 21, no. 5, pp. 593-596, 2009.
    [23] X. Zhao, S. Li, C. Ai, H. Liu, and D. Wen, "Fabrication and characterization of the Li-Doped ZnO thin films piezoelectric energy harvester with multi-resonant frequencies," Micromachines, vol. 10, no. 3, p. 212, 2019.
    [24] T. Mitsuyu, O. Yamazaki, K. Ohji, and K. Wasa, "Piezoelectric thin films of zinc oxide for saw devices," Ferroelectrics, vol. 42, no. 1, pp. 233-240, 1982.
    [25] G. Bräuer, B. Szyszka, M. Vergöhl, and R. Bandorf, "Magnetron sputtering–Milestones of 30 years," Vacuum, vol. 84, no. 12, pp. 1354-1359, 2010.
    [26] S. Goldstein, "A servo-force balance isometric muscle force transducer," Journal of applied physiology, vol. 37, no. 1, pp. 134-137, 1974.
    [27] M. Benmessaoud and M. M. Nasreddine, "Optimization of MEMS capacitive accelerometer," Microsystem technologies, vol. 19, no. 5, pp. 713-720, 2013.
    [28] A. R. Sankar, S. Das, and S. Lahiri, "Cross-axis sensitivity reduction of a silicon MEMS piezoresistive accelerometer," Microsystem Technologies, vol. 15, no. 4, pp. 511-518, 2009.
    [29] B. Petkus, "MEMS Piezoelectric Accelerometer for Vibration Sensing in Harsh Environments," 2019.
    [30] K. Kim, S. Zhang, G. Salazar, and X. Jiang, "Design, fabrication and characterization of high temperature piezoelectric vibration sensor using YCOB crystals," Sensors and Actuators A: Physical, vol. 178, pp. 40-48, 2012.
    [31] C. C. Hindrichsen, J. Larsen, E. Thomsen, K. Hansen, and R. Lou-Møller, "Circular piezoelectric accelerometer for high band width application," in SENSORS, 2009 IEEE, 2009: IEEE, pp. 475-478.
    [32] I. Izadgoshasb, Y. Y. Lim, N. Lake, L. Tang, R. V. Padilla, and T. Kashiwao, "Optimizing orientation of piezoelectric cantilever beam for harvesting energy from human walking," Energy conversion and management, vol. 161, pp. 66-73, 2018.
    [33] L.-P. Wang et al., "Design, fabrication, and measurement of high-sensitivity piezoelectric microelectromechanical systems accelerometers," Journal of microelectromechanical systems, vol. 12, no. 4, pp. 433-439, 2003.
    [34] R.-h. Han, J.-y. Wang, M.-h. Xu, and H. Guo, "Design of a tri-axial micro piezoelectric accelerometer," in 2016 Symposium on Piezoelectricity, Acoustic Waves, and Device Applications (SPAWDA), 2016: IEEE, pp. 66-70.
    [35] M.-h. Xu, J.-y. Wang, R.-h. Han, H. Zhou, and H. Guo, "Analytical and finite element analysis of a new tri-axial piezoelectric accelerometer," in 2016 Symposium on Piezoelectricity, Acoustic Waves, and Device Applications (SPAWDA), 2016: IEEE, pp. 71-75.
    [36] X. Gong, C.-T. Chen, W.-J. Wu, and W.-H. Liao, "A high sensitivity piezoelectric MEMS accelerometer based on aerosol deposition method," in Sensors and Smart Structures Technologies for Civil, Mechanical, and Aerospace Systems 2019, 2019, vol. 10970: International Society for Optics and Photonics, p. 1097026.
    [37] X. Gong, W.-J. Wu, and W.-H. Liao, "A low-noise three-axis piezoelectric MEMS accelerometer for condition monitoring," in Sensors and Smart Structures Technologies for Civil, Mechanical, and Aerospace Systems 2020, 2020, vol. 11379: International Society for Optics and Photonics, p. 113790U.
    [38] A. Py-Renaudie, P. Daoust, M. Côté, P. Desjardins, and R. Masut, "Ab initio piezoelectric properties of wurtzite ZnO-based alloys: Impact of the c/a cell ratio," Physical Review Materials, vol. 4, no. 5, p. 053601, 2020.
    [39] H. Momida and T. Oguchi, "Effects of lattice parameters on piezoelectric constants in wurtzite materials: A theoretical study using first-principles and statistical-learning methods," Applied Physics Express, vol. 11, no. 4, p. 041201, 2018.
    [40] K. Hirata, H. Yamada, M. Uehara, S. A. Anggraini, and M. Akiyama, "First-principles study of piezoelectric properties and bonding analysis in (Mg, X, Al) N solid solutions (X= Nb, Ti, Zr, Hf)," ACS omega, vol. 4, no. 12, pp. 15081-15086, 2019.
    [41] C. Yan, T. Ya-Jing, Z. Zhao-Yi, and G. Qing-Quan, "Shell model for elastic and thermodynamic properties of gallium nitride with hexagonal wurtzite structure," Communications in Theoretical Physics, vol. 50, no. 6, p. 1443, 2008.
    [42] H. Gokdemir, H. Ozbasaran, M. Dogan, E. Unluoglu, and U. Albayrak, "Effects of torsional irregularity to structures during earthquakes," Engineering failure analysis, vol. 35, pp. 713-717, 2013.
    [43] J.-S. Chen, Y.-J. Huang, and I.-T. Chien, "Flexural wave propagation in metamaterial beams containing membrane-mass structures," International Journal of Mechanical Sciences, vol. 131, pp. 500-506, 2017.
    [44] K.-S. Kao, C.-J. Chung, Y.-C. Chen, T.-F. Ou, and T.-K. Shing, "The influence of varied sputtering condition on piezoelectric coefficients of AlN thin films," in 14th IEEE International Symposium on Applications of Ferroelectrics, 2004. ISAF-04. 2004, 2004: IEEE, pp. 181-184.
    [45] A. K. Kirubaharan, P. Kuppusami, S. Chakravarty, D. Ramachandran, and A. Singh, "Thermal expansion and residual stress behaviour of electron beam evaporated yttria stabilized zirconia films on Inconel-690 substrates," Journal of Alloys and Compounds, vol. 722, pp. 585-592, 2017.
    [46] S. Fichtner, N. Wolff, F. Lofink, L. Kienle, and B. Wagner, "AlScN: A III-V semiconductor based ferroelectric," Journal of Applied Physics, vol. 125, no. 11, p. 114103, 2019.
    [47] M. Noor-A-Alam, O. Z. Olszewski, H. Campanella, and M. Nolan, "Large Piezoelectric Response and Ferroelectricity in Li and V/Nb/Ta co-doped w-AlN," ACS Applied Materials & Interfaces, vol. 13, no. 1, pp. 944-954, 2020.
    [48] H. Wang, N. Adamski, S. Mu, and C. G. Van de Walle, "Piezoelectric effect and polarization switching in Al $ _ {1-x} $ Sc $ _x $ N," arXiv preprint arXiv:2105.07325, 2021.
    [49] N. Wolff et al., "Atomic scale confirmation of ferroelectric polarization inversion in wurtzite-type AlScN," Journal of Applied Physics, vol. 129, no. 3, p. 034103, 2021.
    [50] S. Zhang, D. Holec, W. Y. Fu, C. J. Humphreys, and M. A. Moram, "Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides," Journal of applied physics, vol. 114, no. 13, p. 133510, 2013.
    [51] K. Tonisch et al., "Piezoelectric actuation of (GaN/) AlGaN/GaN heterostructures," Journal of Applied Physics, vol. 104, no. 8, p. 084516, 2008.
    [52] J. Luo, B. Fan, F. Zeng, and F. Pan, "Influence of Cr-doping on microstructure and piezoelectric response of AlN films," Journal of Physics D: Applied Physics, vol. 42, no. 23, p. 235406, 2009.
    [53] B. Wang, K. Aryana, J. T. Gaskins, P. E. Hopkins, S. V. Khare, and D. Gall, "Structural Stabilization and Piezoelectric Enhancement in Epitaxial (Ti1− xMgx) 0.25 Al0. 75N (0001) Layers," Advanced Functional Materials, vol. 30, no. 30, p. 2001915, 2020.
    [54] J. Yang et al., "A T-shape aluminum nitride thin-film piezoelectric MEMS resonant accelerometer," Journal of Microelectromechanical Systems, vol. 28, no. 5, pp. 776-781, 2019.
    [55] L.-P. Wang, K. Deng, L. Zou, R. Wolf, R. Davis, and S. Trolier-McKinstry, "Microelectromechanical systems (MEMS) accelerometers using lead zirconate titanate thick films," IEEE Electron Device Letters, vol. 23, no. 4, pp. 182-184, 2002.
    [56] J. Yang et al., "A resonant z-axis aluminum nitride thin-film piezoelectric MEMS accelerometer," Micromachines, vol. 10, no. 9, p. 589, 2019.

    下載圖示
    2026-08-28公開
    QR CODE