本研究利用氫離子源輔助濺鍍製作成多層富矽氧化物(Silicon-rich oxide, SRO)/二氧化矽發光二極體，富矽氧化物的發光機制可分為奈米矽團簇和缺陷發光(E` center，NBOHC)兩大類。
藉由光致發光(Photoluminescence, PL)、拉曼光譜(Raman)、X光光電子光譜(X-ray Photoelectron Spectrometer, XPS)等分析來討論加入不同氫離子源電壓後其奈米矽團簇尺寸大小的變化。發現利用離子源的能量，能使矽原子聚合成奈米矽團簇並產生大量的矽氧發光缺陷，進而提升多層富矽氧化物/二氧化矽發光二極體電致發光效率。
氫離子源116V多層SRO/SiO2發光二極體，功率30W時，EL強度增強了15倍，發光效率提高了6倍之多。發光機制主要透過E` center和NBOHC 兩種發光缺陷進行輻射復合。
低溫量測多層SRO/SiO2發光二極體的過程中，隨著溫度下降，發光缺陷輻射復合率增加，載子捕獲截面積變小，無離子源濺鍍之元件EL強度達到最大值在250K；氫離子源電壓116V之元件EL強度達到最大值在123K。

In our research, we fabricated SRO/SiO2 multilayer based device by hydrogen ion-source assisted sputtering.The luminescence mechanism of SRO were silicon nano-clusters and defect (E` center，NBOHC).
The size of silicon nano-clusters with different hydrogen anode voltage by photoluminescence, raman and x-ray photoelectron spectrometer were discussion. Ion source provided energy to silicon atoms, and aggregated into silicon nano-clusters. Besides, it also produced more oxygen related defects, which improved EL efficiency .
For hydrogen anode votage 116V, EL intensity increased 15 times,and EL efficiency enhanced 6 times when the power was operated at 30W. The EL luminescence mechanism of radiative recombination was through E` center and NBOHC.
Defect recombination rates increased,and trap cross section decreased with the decreasing of temperature.For non ion source device, EL intensity reached maximum at 250K; For hydrogen anode votage 116V, EL intensity reached maximum at 123K

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