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研究生：	魏上欽 Wei, Sun-Chin
論文名稱：	氮化鋁鎵/氮化鎵系高電子移動率電晶體之電特性與低頻雜訊之分析 Electrical Analysis and Low-Frequency Noise Investigations of the AlGaN/GaN High Electron Mobility Transistors
指導教授：	蘇炎坤 Su, Yan-Kuin
學位類別：	博士 Doctor
系所名稱：	電機資訊學院 - 電機工程學系 Department of Electrical Engineering
論文出版年：	2004
畢業學年度：	92
語文別：	英文
論文頁數：	159
中文關鍵詞：	高功率、高電子移動率電晶體、氮化鎵、低頻雜訊
外文關鍵詞：	HEMT, high power, low-frequency noise, GaN
相關次數：	點閱：70 下載：5
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本論文旨在探討氮化鎵材料系之高電子移動率電晶體之電特性，同時並針對其電特性的不良處，利用磊晶技術改變元件之結構以改善其電性，進而加以分析並對該元件進行特性模擬，以其逹到元件之製作、量測、分析之外，亦能對元件相關之特性參數加以瞭解。此外，本論文另一主要目的乃在於探討元件欲應用於高頻電路中需考量的低頻雜訊問題。低頻雜訊雖屬低頻的訊號，但其實在高頻電路應用中卻是造成振盪器、混頻器等兩大類電路產生相位雜訊的主要因素，因此有必要探討低頻雜訊可能的產生因素，並瞭解不同的元件結構上低頻雜訊的影響性。在探討低頻雜訊後，亦針對雜訊源的種類而進行雜訊模型參數之萃取。在此，我們發現了元件結構的小變化對雜訊特性的影響非常明顯。

In this dissertation, the electric characteristics of GaN-based HEMTs were studied and characterized. Different structures were adopted to improve the characteristics of devices and for the comparison. DC and RF measurements were made for device characterization identifying. Besides the measurements and analysis of the devices, the parameters of equivalent circuit of the HEMT were also extracted for the DC and RF simulation to obtain more understanding of the GaN-based HEMTs.
Another subject of this dissertation is about the consideration of the low-frequency noise. It belongs the signal of low-frequency range, but the low-frequency noise plays an important role in the RFICs such as oscillators and mixers. It broadens the spectrum of the main signal and causes the phase noise to result in the poor performance of the circuits. Therefore, it is necessary to understand the possible cause of the low-frequency noise and the effect on the devices. Therefore, the low-frequency noise of the GaN-based HEMTs was investigated. In this dissertation, the low-frequency noise in different device structures were measured and discussed. The noise spectrum was also fitting by the different noise source to understand the behavior of the noise sources in the GaN-based HEMTs. It was found that the low-frequency noise is much different even with little change in the device structures.

Abstract (in Chinese)......	..............................................I
Abstract (in English)....................................................II
Acknowledgement..........................................................IV
Contents.................................................................VI
Table Captions...........................................................IX
Figure Captions..........................................................X
Chapter 1 Introduction...................................................1
1.1 The background of research on III-V based high electron mobility
    transistors (HEMTs)..................................................1
1.2 Low-frequency noise in semiconductors................................3
1.3 Effect of low-frequency noise of devices on RF circuits..............5
1.4 Overview of this dissertation........................................6
Chapter 2 Theory of HEMT and Low-Frequency Noise.........................8
2.1 DC characteristics of HEMTs..........................................8
2.2 RF characteristics of HEMTs..........................................13
2.3 Model of HEMTs	.......................................................18
2.4 Low-frequency noise and model........................................19
Chapter 3 Measuring System and Simulation Software.......................34
3.1 DC and RF measuring system...........................................34
3.2 Software for the measurements and simulations........................40
Chapter 4 Growth and Processes of AlGaN/GaN HEMTs........................52
4.1 The reaction chemistry of metal organic vapor phase epitaxy (MOVPE)..52
4.2 Growth and fabrication of AlGaN/GaN HEMTs grown by MOVPE.............57
Chapter 5 DC and RF Characteristics of AlGaN/GaN HEMTs...................61
5.1 DC characteristics of AlGaN/GaN HEMTs with and without Mg-doped GaN layer
.........................................................................61
5.2 RF characteristics of AlGaN/GaN HEMTs with Mg-doped GaN layer........69
5.3 Summary..............................................................74
Chapter 6 Parameters Extraction of AlGaN/GaN HEMTs.......................98
  6.1 Extrinsic parameters extraction of the AlGaN/GaN HEMT..............99
  6.2 Intrinsic parameters extraction of the AlGaN/GaN HEMT..............103
  6.3 DC simulation of the AlGaN/GaN HEMT................................104
  6.4 Small signal simulation of the AlGaN/GaN HEMT......................105
  6.5 Summary............................................................105
Chapter 7 Low-Frequency Noise of AlGaN/GaN HEMTs.........................111
7.1 Low-frequency noise characteristic of AlGaN/GaN HEMTs................111
7.2 Low-frequency noise model parameters of AlGaN/GaN HEMTs..............117
7.3 Summary..............................................................118
Chapter 8 Conclusion and Future Prospect.................................128
References...............................130
Appendix A  Equations of the EEHEMT1 model...........136
Appendix B PEL program for the de-embedding processes...................... 157
                                    

[1] Y. Ayalsi, Microwave J. vol.25, pp.719-723, 1982.
[2] A. Gropinath and J. Rankin, IEEE Trans. Electron Devices, vol. 32, pp. 1272-1278, 1985.
[3] A. Gropinath, IEEE Electron Device Lett., vol. 6, pp. 505-506, 1985.
[4] N. Jain and R. Gutmann, “Modeling and design of GaAs MESFET control devices for broad-band applications,” IEEE Trans. Microwave Theory Tech., vol. 38, pp. 109-117, 1990.
[5] T. P. Chow and T. Tyagi, IEEE Trans. Electron Devices, vol. 41, pp. 1481, 1994.
[6] R. J. Trew, M. W. Shin, and V. Gatto, Solid-State Electron., vol. 41, pp. 1561, 1997.
[7] M. N. Yoder, IEEE Trans. Electron Devices, vol. 43, pp. 1633, 1996.
[8] Y. –F. Wu, S. Keller, P. Kozodoy, B. P. Keller, P. Parikh, D. Kapolnek, S. P. Denbaars, and U. K. Mishra, “Bias dependent microwave performance of AlGaN/GaN MODFET’s up to 100V,” IEEE Electron Device Lett., vol. 18, pp. 290-292, 1997.
[9] O. Aktas, Z. F. Fan, A. Botchkarev, S. N. Mohammad, M. Roth, T. Jenkins, L. Kehias, and H. Morkoc, “Microwave performance of AlGaN/GaN inverted MODFET’s,” IEEE Electron Device Lett., vol.18, pp.293-295, 1997.
[10] M. A. Khan, Q. Chen, J. W. Yang, M. S. Shur, B. T. Dermott, and J. A. Higgins, “Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors,” IEEE Electron Device Lett., vol. 17, pp. 325-327, 1996.
[11] Y.-F. Wu, B. P. Keller, S. Keller, D. Kapolnek, S. P. Denbaars, and U. K. Mishra, “Measured microwave power performance of AlGaN/GaN MODFET,” IEEE Electron Device Lett., vol. 17, pp. 455-457, 1996.
[12] Z. Fan, C. Lu, A. Botchkarve, H. Tang, A. Salvador, O. Aktas, W.Kim, and H. Morkoc, “AlGaN/GaN double heterostructure channel modulation doped field effect transistor (MODFETs),” Electron. Lett., vol. 33, pp. 814-815, 1997.
[13] O. Aktas, Z. Fan, A. Botchkarev, S. N. Mohammad, M. Roth, T. Jenkins, L. Kehias, and H. Morkoc, “Microwave performance of AlGaN/GaN inverted MODFET’s,” IEEE Electron Device Lett., vol. 18, pp. 293-295, 1997.
[14] M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. Schaff, and L. F. Eastman, “Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency,” Electron. Lett., vol. 32, pp. 357, 1996.
[15] Y. F. Wu, B. P. Keller, S. Keller, N. X. Nguygen, M. Le, C. Nguyen, T. J. Jenkins, L. T. Kehias, S. P. Denbaars, and U. K. Mishra, “Short channel AlGaN/GaN MODFET’s with 50-GHz fT and 1.7-W/mm output-power at 10GHz,” IEEE Electron Device Lett., vol. 18, pp. 438-440, 1997.
[16] Y. F. Wu, B. P. Keller, P. Fini, S. Keller, T. J. Jenkins, L. T. Hehias, and S. P. Denbaars, “High Al-content AlGaN/GaN MODFETs for ultrahigh performance,” IEEE Electron Device Lett., vol. 19, pp. 50-53, 1998.
[17] Albert van der Ziel, “Noise in Solid State Devices and Circuits,” 1986.
[18] F. N. Hooge, “1/f Noise Sources,” IEEE Trans. Electron Devices, vol. 41, pp. 1926-1935, 1994.
[19] C. Surya, S. H. Ng, E. T. Brown, and P. A. Maki, “Spectral and random telegraph noise characterizations of low-frequency fluctuations in GaAs/Al0.4Ga0.6As resonant tunneling diodes,” IEEE Trans. Electron Devices, vol. 41, No. 11, pp. 2016 – 2022, 1994.
[20] P. Dutta and P. M. Horn, “Low-frequency Fluctuations in solids: 1/f noise,” Rev. Mod. Phys., vol. 53, No. 3, pp. 497-516, 1981.
[21] J. Chang, A. A. Abidi, and C. R. Viswanathan, “Flicker noise in CMOS transistors from subthreshold to strong inversion at various temperatures,” IEEE Tarns. Electron Devices, vol. 41, pp. 1965-1971, Nov. 1994.
[22] D. M. Fleetwood, T. L. Meisenheimer, and J. H. Scofield, “1/f noise and radiation effects in MOS devices,” IEEE Trans. Electron Devices, vol.41, pp. 1953-1964, Nov. 1994.
[23] N. Giordano, “Defect motion and low-frequency noise in disordered metals,” Rev. Solid State Sci., vol. 3, No. 1. pp. 27-69, 1989.
[24] W. Y. Ho and C. Surya, “Study of 1/f noise in hydrogenated amorphous silicon thin films,” Solid-State Electron., vol. 39, No. 11, pp. 1577-1580, 1996.
[25] O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger and J. Hilsenbeck, “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures,” J. Appl. Phys., vol.85, No.6, pp. 3222-3233, 1999.
[26] R. Gaska, J. W. Yang, A. D. Bykhovski, M. S. Shur, V. V. Kaminski and S. M. Soloviov, “The influence of the deformation on the two-dimensional electron gas density in GaN–AlGaN heterostructures,” Appl. Phys. Lett., vol. 72, pp. 64-66, 1998.
[27] Patrick Roblin and Hans Rohdin, High-speed heterostructure devices: From device concepts to circuit modeling, pp. 272-276, 2001.
[28] M. B. Das and M. L. Roszak, “ Design calculations for submicron gate-length AlGaAs/GaAs modulation-doped FET structures using carrier saturation velocity/charge control model,” Solid-State Elect., vol. 28, pp. 997-1005, 1985.
[29] J. M. Rollett, “Stability and power-gain invariants of linear two ports,” IRE trans. Circuit Theory, vol. CT-9, No. 3, pp. 29-32, 1962.
[30] S. J. Mason, “Power gain in feedback amplifiers,” IRE Trans. Circuit Theory, vol. CT-1, No. 2, pp. 20-25, 1954.
[31] F. N. Hooge, “1/f noise is no surface effect,” Phys. Lett., vol. 29A, pp. 139, 1969.
[32] H. M. Manasevit, Appl. Phys. Lett., vol.12, pp.156, 1968.
[33] H. M. Manasevit, and W. I. Simpson, Electronchem. Soc., vol.116, pp.1725, 1969.
[34] H. M. Manasevit, and K. L. Hess, J. Electrochem. Soc., vol.126, pp.2031, 1979.
[35] J. S. Yuan, C. C. Hsu, R. M. Cohen, and G. B. Stringfellow,“ Organometallic vapor phase epitaxial growth of AlGaInP”, J. Appl. Phys., vo.57, pp.1380-1383, 1985.
[36] A. Thon, and T. F. Kuech, Mat. Res. Soc., vol.97, 1996.
[37] G. E. Coates, M. L. H. Green, P. Powell, and K. Wade, Principles of Organometallic Chemistry, Methuen, London.
[38] A. Wickenden, D. Wickenden, and T. Kistenmacher, “ The effect of thermal annealing on GaN nucleation layers deposited on (0001) sapphire by metalorganic chemical vapor deposition”, J. Appl. Phys., vol.75, pp.5367-5371, 1994.
[39] A. Wickenden, D. Wickenden, T. Kistenmacher, S. Ecelberger, and T. Poehler. Mat. Phys. Lett., vol.65, pp.2024, 1994.
[40] Behzad Razavi, Design of Analog CMOS Integrated Circuits, 2001, ISBN 0-07-118839-8, pp.17.
[41] Patrick Roblin and Hans Rohdin, “High-speed heterostructure devices ;From device concepts to circuit modeling”, 2001, pp. 342.
[42] G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, “A new method for determining the FET small-signal equivalent circuit,” IEEE Trans. Microwave Theory and Tech., vol. 36, No. 7, pp. 1151-1159, 1988.
[43] F. Lin and G. Kompa, “FET model parameter extraction based on optimization with multiplane data-fitting and bidirectional search – A new concept,” IEEE Trans. Microwave Theory Tech., vol. 42, No. 7, pp. 1114-1121, 1994.
[44] R. L. Vaitkus, “Uncertainty in the values of GaAs MESFET equivalent circuit elements extracted from measured two-port scattering parameters,” in Proc. 1983 IEEE Cornell Conf. High-Speed Semiconductor Device and Circuit, 1983, pp. 301-308.
[45] H. Fukui, “Determination of the basic device parameters of a GaAs MESFET,” Bell Systems Tech. J., vol. 58, No. 3, pp. 771-797, March 1979.
[46] K. W. Lee, K. Lee, M. S. Shur, T. T. Vu, P. C. T. Roberts, and M. J. Hlix, “Source, drain, and gate series resistances and electron saturation velocity in ion-implanted GaAs FET’s,” IEEE Trans. Electron Devices, vol. ED-32, No. 5, pp. 987-992, May 1985.
[47] S. Chaudhuri and M. B. das, “An investigation of the MWADWR ‘end’ resistance using a distributed diode/resistance model,” IEEE Trans. Electron Devices, vol. ED-32, No. 11, pp. 2262-2268, Nov. 1985.
[48] R. Vogel, “The application of RF wafer probing to MEWSFET modeling,” Microwave J., vol. 31, No. 11, pp. 153-162, Nov. 1988.
[49] J. C. Costa, M. Miller, M. Golio, and G. Norris, “Fast, accurate, on-wafer extraction of parasitic resistances and inductances in GaAs MESFET’s and HEMT’s,” 1992 IEEE MEE-S Int. Microwave Symp. Dig., June 1992, vol. 2, pp. 1011-1014.
[50] P. Debie, L. Martens, and D. De Zutter, “Fast and accurate on-wafer extraction of parasitic resistances in GaAs MESFET’s,” Proc. IEEE 1994 Int. Conf. Microelectronic Test Structures, vol. 7, pp. 7-11, March 1994.
[51] A. Balandin, “Gate-voltage dependence of low-frequency noise in GaN/AlGaN heterostructure field-effect transistors”, Electron. Lett., vol. 36, pp. 912-913, 2000.
[52] A. Balandin, S. V. Morozov, S. Cai, R. Li, K. L. Wang, G. Wijeratne and C. R. Viswanathan, “ Low Flicker-Noise GaN/AlGaN Heterosttucture Field-Effect Transistors for Microwave Communications,” IEEE Trans. Microwave Theory and Techniques, vol. 47, pp. 1413-1417, 1999.
[53] Z. Celik-Butler and T. Y. Hsiang, “ Spertral dependence of 1/f r noise on gate bias in N-MOSFETs,” Solid State Electronics, vol. 30, pp. 419, 1987.

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