本研究利用電沉積法，以三乙醇胺(Triethanolamine，TEA)錯合劑，成功製備出二硒化銀銦(AgInSe2)與銀銅銦硒((Ag,Cu)InSe2)化合物。實驗變因包含：電沉積的電位與時間、TEA濃度、pH值、銀離子與銅離子濃度、退火溫度。研究中第一部分為沉積二硒化銀銦(AgInSe2)，探討不同銀離子下所得到的產物組成。在低還原電位下，易形成Ag2Se二元相化合物，隨著電壓提高至-1.0 V，AgInSe2薄膜主要優選方向為(112)面方向，與XRD結果相一致。SEM觀察表面形貌，低還原電位下薄膜呈現圓球狀，高還原電位下薄膜表面分布均勻成樹枝狀。最後利用紫外光/可見光/近紅外光光譜儀進行光學性質分析，得到退火後的AgInSe2具有高光學係數(104 cm-1以上)。結果顯示，電沉積最佳化條件：7 mM AgNO3 + 10 mM In2(SO4)3．9H2O + 40 mM SeO2 + 0.2 M TEA，沉積時間20 min，退火溫度280 °C，薄膜能隙值1.23 eV。
研究中第二部分為銀銅銦硒(Ag,Cu)InSe2化合物的沉積，調整改變[Cu]/[Ag]比例得到所想要的組成，加入銅原子取代原有銀原子佔有位後，XRD分析中AgInSe2的(112)面繞射峰消失，反而出現CuInSe2的(112)面繞射峰，隨著CuSO4．5H2O濃度的增加及還原電壓的提升，繞射峰強度明顯增強，同時薄膜形貌分析上，更趨近於花椰菜結構。(Ag,Cu)InSe2的吸收係數與能隙值小於AgInSe2。

We successfully fabricated AgInSe2 and (Ag,Cu)InSe2 thin films by triethanolamine complexing agent using electrodeposition method. The parameters include：deposition potential and time in electrodeposition, concentration of TEA, pH value, concentration of silver ions and copper ions, annealing temperature. For the first study, AgInSe2 have been prepared to identify concentrations of silver ion could be obtained composition of product. With lower reduction potential was easy to form a binary compound Ag2Se. The main preferred orientations of AgInSe2 is (112) as the applied potential increased to -1.0 V, this result is consistent to that from XRD. The surface morphology of AgInSe2 was observed by SEM, thin films revealed sphere shape with lower reduction potential and uniformly distributed dendrimer structures with higher reduction potential. Finally, the absorption coefficient of AgInSe2 were analyzed by using UV/VIS/NIR spectra, this work obtained AgInSe2 thin films with high absorption coefficient (above about 104 cm-1) after annealed. This results showed an optimum deposition condition: 7 mM AgNO3 + 10 mM In2(SO4)3．9H2O + 40 mM SeO2 + 0.2 M TEA, electrodeposition time was 20 min, annealing temperature at 280 °C, the value of band gap was 1.23 eV.
For the second study, (Ag,Cu)InSe2 thin film was electrodeposited with various [Cu]/[Ag] to adjust composition wanted. When occupies of Ag were substituted after Cu were added to it, XRD analysis of AgInSe2 diffraction peak on (112) plane has disappeared instead of CuInSe2 diffraction peak on (112) plane. With concentrations of CuSO4．5H2O and the reduction potential increased that the diffraction peaks intensity became obviously stronger, and morphologies analysis of thin films were like to cauliflower structures. The absorption coefficient and band gap of (Ag,Cu) InSe2 thin films were less than AgInSe2.

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