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研究生：	張嘉陞 Chang, Chia-Sheng
論文名稱：	切換式耦合電感及其應用於超寬頻頻率合成器低功率6,072/6,600-MHz壓控振盪器的設計 Switched Coupled Inductor and Its Application to a Low Power 6,072/6,600-MHz VCO Design for UWB RF Synthesizer Applications
指導教授：	黃尊禧 Huang, Tzuen-Hsi
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電機工程學系 Department of Electrical Engineering
論文出版年：	2008
畢業學年度：	96
語文別：	英文
論文頁數：	122
中文關鍵詞：	切換式電感、壓控振盪器
外文關鍵詞：	VCO, switchable inductor
相關次數：	點閱：81 下載：5
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本論文主要包含兩個部分。第一部分，我們對於文獻 [5] 中所提出的可調頻率極寬的壓控振盪器中所使用的切換式耦合電感做更進一步的特性分析與研究。我們亦將討論其模擬設計、量測分析以及等效電路模型的建立。第二部分，我們利用此切換式耦合電感去設計一個可應用於UWB MB-OFDM 的頻率合成器中的切換頻率的壓控振盪器;並另外比較使用微機電製程和一般製程製作下的切換式耦合電感在壓控振盪器電路效能上的差別。
首先，我們使用電磁模擬軟體(ADS Momentum)來對此切換式耦合電感進行模擬分析，其模擬方法與過程將逐一詳介。其中，藉由不同的切換式耦合電感架構以及不同尺寸大小的MOS 開關電晶體和電阻對此切換式耦合電感特性的影響也將被討論與分析。而此種切換式電感是利用TSMC 0.18 μm 1P6M標準RF CMOS製程來研製。為了有效的使用此種切換式耦合電感來設計電路及描述其高頻下的行為，一個簡單的電感等效電路模型也被提出。最後，模擬、量測以及等效電路模型結果將被說明與比較。
我們利用此種切換式耦合電感實現了本實驗室所提出來的頻率合成器架構的多頻帶壓控振盪器之應用。另外，並利用微機電製程於此種切換式耦合電感，以觀察此元件與一般製程上所實現之元件的特性差異以及在電路效能上的改進。

This thesis is mainly divided into two parts. In the first part, we investigate and characterize in depth the switched coupled inductors which has been reported in the wide tuning range VCO [5]. The simulation, measurement and equivalent circuit model results of the switched coupled inductors are presented. In the second part, we design a VCO utilizing such switched coupled inductors for the UWB MB-OFDM synthesizer application. In addition, a VCO circuit with a MEMS switched coupled inductor is also designed in a MEMS post-process and is compared with the performance of the VCO circuit in the standard process.
The simulation method and procedures of the switched coupled inductors will be introduced in the EM simulation soft (ADS Momentum). The characterizations of switched coupled inductors which are affected by the different geometry, MOS transistor size and resistance will be also discussed and analyzed. And the switched coupled inductors are fabricated in the TSMC 0.18 μm 1P6M standard RF CMOS process. In order to design the circuit with this kind of switchable inductor efficiently and describe the high frequency behavior of it, a simple equivalent lump-circuit is also proposed. Finally, the simulation, measurement and equivalent circuit model results are explained and compared.
We use the switched coupled inductors to implement the multi-band VCO of the frequency synthesizer which was proposed by our laboratory. Furthermore, the switched coupled inductors are also fabricated in the MEM process for observing the difference in the standard process and the improvement of the circuit performance.

Contents


Chinese Abstract	I
English Abstract	II
List of Tables	VII
List of Figures	VIII

Chapter 1	Introduction	1
1	Background	1
2	Motivation	3
3	Thesis Organization	6

Chapter 2	On-Chip Inductor and Switched Coupled Inductors	8
1.	Introduction	8
2.	On-Chip Inductor	8
2.1.	Inductor Structures	8
2.2.	Inductance	12
2.2.1.	Self Inductance	12
2.2.2.	Mutual Inductance	12
2.2.3.	Total Inductance	14
3.	Loss Mechanisms of Inductors in CMOS Process	14
3.1.	Metal Loss	15
3.1.1.	Skin Effect	15
3.1.2.	Proximity Effect	16
3.2.	Substrate Loss	17
3.2.1.	Magnetically Induced Parasitic Effects	17
3.2.2.	Electrically Induced Parasitic Effects	18
3.2.3.	Three Operation modes in the Different Resistivity Substrate	19
3.3.	Definition of Quality Factor	20
4.	Traditional Switchable Inductor	21
5.	Switched Coupled Inductors	23
5.1.	Introduction	23

Chapter 3 	Simulation, Measurement and Modeling of Switched
	Coupled Inductors	27
1.	Simulation	27
1.1.	Simulation Procedure	28
1.2.	The Effects of Different Line Width	31
1.3.	The Effects of Different Spacing	36
1.4.	The Effects of Different Transistor Size	37
1.5.	The Effects of Different Resistor	40
1.6.	The Effects of the Outside Secondary Inductor	41
2.	Measurement	46
2.1.	S-Parameters Measurement by On-Wafer Testing	47
2.2.	Measurement Results of Strongly-Coupled Inductors	50
2.3.	Measurement Results of Weakly-Coupled Inductors	52
2.4.	The Effects of Different Width of MOS Transistor	53
3.	Inductor Modeling	57
3.1.	The Proposed Model of Switched Coupled Inductors	58
3.2.	The Comparison among Simulation, Measurement and
	Modeling Results	60
4.	Improve the Quality Factor of Inductor in MEMS Process	64

Chapter 4	Voltage-Controlled Oscillator	68
1.	Introduction	68
2.	Principle of the Oscillator	69
2.1.	Positive Feedback Analysis	69
2.2.	One Port Analysis	70
3.	Characteristics of the Oscillator	72
3.1.	Phase Noise	72
3.2.	Tuning Range	74
3.2.1.	Varactor	75
3.3.	Power Consumption	78
4.	Comparison of Different VCO Architecture	80
4.1.	Traditional VCO Architecture	80
4.2.	Push-Push VCO Architecture	82
4.3.	Colpitts VCO Architecture	83
4.4.	Current-Reuse VCO Architecture	84
4.5.	Summary	86

Chapter 5	Design of the Low Power VCO for UWB Frequency
		Synthesizer	87
1.	Architecture of the Low Power VCOs in CMOS and MEMS Process	
		87
1.1.	Core Circuit	88
1.2.	Buffer Stage	89
1.3.	Layouts and Photos of VCOs	90
2.	The Proposed Ultra Wideband Frequency Synthesizer	91
3.	The Design Procedure of the Low Power VCO	94
3.1.	Simulation Tools	94
3.2.	Simulation Procedure	94
3.3.	Simulation Results (Post-Simulation)	98
3.3.1.	Corner Simulation Results When Switch On, VDD=1.2V, Vtune=0 V
		98
3.3.2.	Corner Simulation Results When Switch Off, VDD=1.2V, Vtune=0 V
		102
4.	Measurement Results	106
4.1.	Measurement Results of Low Power VCO1 in CMOS Process
		108
4.1.1.	DC Measurement	108
4.1.2.	Phase Noise	109
4.1.3.	Tuning Range	110
4.1.4.	Power Spectrum &Output Power	112
4.2.	Performance of VCO1	114

Chapter 6	Conclusions and Future Work	115
1.	Conclusions	115
2.	Future Work	117

References	118
                                    

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