本論文研究主題為使用射頻濺鍍法成長尖晶石鈦酸鋅及尖晶石鈦酸鎂磊晶薄膜於氮化鎵基板之材料特性與介電特性分析。
在成長鈦酸鋅磊晶薄膜的研究中，藉由控制鍍膜過程中濺鍍能量（功率）、調變濺鍍過程的氧分壓（氬氧比）及後退火溫度，觀察於不同參數下鈦酸鋅薄膜磊晶的情形。透過X光粉末繞射儀、X光低掠角繞射儀、極圖分析及穿透式電子顯微鏡（TEM）分析其結晶性、優選方向及磊晶結構。發現於鍍膜功率100 W、鍍膜氬氧比例1/1、在800oC 3分鐘快速熱退火（RTA）具有最佳磊晶關係，平面磊晶關係為(111)_(〖Zn〗_2 〖TiO〗_4 )|| (0001)_GaN，以及平面上方向的磊晶關係為[1 ̅10]_(〖Zn〗_2 〖TiO〗_4 )||[1 ̅1 ̅20]_GaN，[12 ̅1]_(〖Zn〗_2 〖TiO〗_4 )||[11 ̅00]_GaN；電性量測則由電壓-電流及電壓-電容量測，其漏電流密度為1.99×10-7 Acm-2，介電常數約為18.85，介面缺陷密度為8.38×1011 eV-1cm-2。
在鈦酸鎂的研究中，延用鈦酸鋅最佳參數再做調整，成長鈦酸鎂氧化層，發現鈦酸鎂與鈦酸鋅擁有相似的實驗結果，且同樣有能隙與氮化鎵相近，易造成漏電流過大的問題。
藉由加入寬能隙氧化鎂作為鈦酸鎂氧化層與氮化鎵間的緩衝層，改善鈦酸鎂因能隙與氮化鎵相近導致漏電流過大且電壓-電容曲線易崩潰的問題。最佳電性其漏電流密度為4.6 × 10-8 Acm-2，介電常數為17.6，介面缺陷密度為7.4 ×1011 eV-1cm-2。

This thesis reports on the epitaxially grown spinel layers on GaN substrate for the MOS applications.
Epitaxial Zn2TiO4 layers were deposited on GaN substrates by tuning the coating rate, the ratio of Ar and O2, and the annealing temperature. Powder, glazing angle, and pole figure X-ray diffraction（XRD）, were performed to identify the crystallinity, the preferring orientation, and the texture of the Zn2TiO4 films. The best epitaxial relationship was found when deposited at rf power 100 W, Ar/O2 ratio = 1, and annealed at 800oC for 3 minutes（RTA, rapid thermal annealing）. The epitaxial relationship was determined by the results from XRD and HR-TEM: (111)_(〖Zn〗_2 〖TiO〗_4 )|| (0001)_GaN, [1 ̅10]_(〖Zn〗_2 〖TiO〗_4 )||[1 ̅1 ̅20]_GaN, [12 ̅1]_(〖Zn〗_2 〖TiO〗_4 )||[11 ̅00]_GaN. And the relative permittivity, leakage current denstity and interfacial trap density of the Zn2TiO4 based capacitor was found to 18.85, 1.99×10-7 Acm-2, and 8.38×1011 eV-1cm-2, respectively.
Epitaxial Mg2TiO4 as a gate oxide of GaN has similar properties as those of Zn2TiO4. However, both Zn2TiO4 and Mg2TiO4 gate oxides encounter the leakage current problem because their band gaps are close to GaN.
Finally, a MgO buffer layer that was inserted between Mg2TiO4 layer and GaN substrate was used to solve the leakage current, and poor capacitor- voltage relation problems. The relative permittivity, leakage current density and interfacial trap density of the Zn2TiO4 based capacitor were found to be 17.6, 4.6×10-8 Acm-2, and 7.4×1011 eV-1cm-2, respectively.

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