本篇論文中提出兩種非真空式的氧化鋁薄膜成長方式。第一種為過氧化氫氧化技術，第二種為超音波噴塗熱裂解沉積技術。並將此二種方式所成長出的氧化鋁應用於氮化鎵半導體元件作為鈍化層、閘極介電層、絕緣層與抗反射層。在本論文中除了介紹過氧化氫氧化技術與超音波噴塗熱裂解沉積技術的薄膜成長機制，亦對於所成長出的氧化鋁薄膜有化學上的分析與探討。
首先，將過氧化氫氧化技術所成長出的氧化鋁作為氮化鋁鎵/氮化鎵金屬-氧化物-半導體高電子移動率電晶體的表面鈍化層與閘極介電層。在直流電性能上，金-氧-半高電子移動率電晶體的閘極漏電流可降至1.1×10-7 A/mm，崩潰電壓可提升至126 V，最大輸出電流可增加至802 mA/mm，異質轉導可上升至136 mS/mm。在射頻性能上，金-氧-半高電子移動率電晶體的截止頻率可增加為16.2GHz，最大輸出功率可上升至0.99 W/mm，功率增益效率可提升至32.3%，最小雜訊指數可降至4.08 dB。在金-氧-半高電子移動率電晶體之中的閘極漏電流與崩潰電壓的形成機制在論文當中有加以探討。此外，金-氧-半高電子移動率電晶體的高溫與可靠度性能皆有量測並探討。在金-氧-半高電子移動率電晶體中的射頻汲極電流崩塌效應亦得到改善。
以過氧化氫氧化技術與超音波噴塗熱裂解沉積技術所成長出的氧化鋁應用於氮化鋁鎵/氮化鎵離子感測場效應電晶體的表面鈍化層與感測膜。在本論文中，離子感測場效應電晶體主要用於酸鹼溶液感測之用途。在酸鹼感測靈敏度上，以過氧化氫所成長出的氧化鋁為55.2 mV/pH;以超音波噴塗熱裂解沉積技術所成長出的氧化鋁為55.6 mV/pH，此二者之感測靈敏度皆十分接近理想的能斯特極限。在靈敏度指數上，以過氧化氫所成長出的氧化鋁為8.64;以超音波噴塗熱裂解沉積技術所成長出的氧化鋁為9.72。此外，具有氧化鋁的離子感測場效應電晶體可改善遲滯效應，穩定度，與老化速度。在元件壽命上，離子感測場效應電晶體具有以過氧化氫所成長出的氧化鋁為389小時; 以超音波噴塗熱裂解沉積技術所成長出的氧化鋁為415小時。
再者，以過氧化氫成長技術與超音波噴塗熱裂解沉積技術所形成的氧化鋁應用於氮化鎵紫外光檢測器與發光二極體等光電元件。在本論文中，製作了金屬-半導體-金屬，蕭特機能障，與金屬-絕緣體-半導體紫外光檢測器並對於性能加以探討。在光響應的性能表現上，具有鈍化層的金屬-半導體-金屬可改善至145 A/W; 具有鈍化層的蕭特機能障可改善至5.22×10-4 A/W;以過氧化氫氧化技術與超音波熱裂解噴塗沉積技術所成長出的氧化鋁作為金屬-絕緣體-半導體之絕緣體層分別提升至5.78×10-2 A/W與0.52 A/W。在感測度上，具有鈍化層的金屬-半導體-金屬可改善至4.55×1010 cmHz0.5W-1; 具有鈍化層的蕭特機能障可改善至9.08×107 cmHz0.5W-1;以過氧化氫以化技術與超音波熱裂解噴塗沉積技術所成長出的氧化鋁作為金屬-絕緣體-半導體之絕緣體層分別提升至5.51×1011 cmHz0.5W-1與7.59×1011 cmHz0.5W-1。此外，對於金屬-半導體-金屬與蕭特機能障紫外光檢測器的暗電流所形成的原因在論文之中有加以探討與量測。對於不同型態的紫外光檢測器具有不同的性能表面，在論文當中也有加以解釋。
最後，將氧化鋁作為氮化銦鎵/氮化鎵發光二極體晶片的表面鈍化層與抗反射層應用之探討。具有超音波噴塗熱裂解沉積技術所成長出的氧化鋁覆蓋與發光二極體之上方，可降低內部全反射與菲涅爾損耗反射，使更多數量的光子得以由主動區射出至空氣當中。具有氧化鋁覆蓋的發光二極體的最大光輸出功率可提升至355 mW而外部量子效率亦可提升至43.75%。再將覆蓋有氧化鋁與標準製程覆蓋有二氧化矽的發光二極體晶片封裝成發光二極體燈並做比較。發現以氧化鋁作為發光二極體晶片的表面鈍化層與抗反射層比起二氧化矽，在光輸出功率上高出了7.2 mW且在電性上兩者之間並沒有太大的差異。
以過氧化氫氧化技術與超音波噴塗熱裂解沉積技術在氮化鎵半導體元件上成長氧化鋁可以有效增強元件的性能。此外，這兩種氧化鋁薄膜成長方式具有非真空式、低設備維護成本、製程速度快、與安全的液態前驅物等優點。這些優勢除了改善元件性能之外，亦能夠有效降低元件的生產時間及成本。

This dissertation proposes two non-vacuum thin film growth techniques to grow aluminum oxide (Al2O3) and the Al2O3 is applied to gallium nitride (GaN)-based semiconductor devices. The first is hydrogen peroxide (H2O2) oxidation technique and the other is the ultrasonic spray pyrolysis (USP) deposition technique. The H2O2- and USP-grown Al2O3 are served as a passivation layer, a gate dielectric layer, an insulator layer, and an antireflection layer. The mechanisms of H2O2 oxidation and USP deposition techniques are introduced. The chemical analysis of H2O2- and USP-grown Al2O3 is discussed.
The AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) has the H2O2-grown Al2O3 as a surface passivation layer and a gate dielectric layer. The DC electrical performances of gate leakage, off-state breakdown voltage, maximum output current, and maximum extrinsic transconductance of the MOS-HEMT are 1.1×10-7 A/mm, 126 V, 802 mA/mm, and 136 mS/mm. The RF performances of cut-off frequency, maximum output power, power added efficiency, and minimum noise figure of the MOS-HEMT are 16.2 GHz, 0.99 W/mm, 32.3%, and 4.08 dB. The leakage and breakdown mechanisms are investigated. The high-temperature performances and the reliability of the MOS-HEMT are also measured and discussed. In addition, the RF drain current collapse phenomenon of the MOS-HEMT is relieved.
The H2O2- and the USP-grown Al2O3 are served as a passivation layer and a sensing membrane of the AlGaN/GaN ion-sensitive field-effect transistor (ISFET) for pH detection. The pH-sensitivity of the ISFET with H2O2- and of that with USP-grown Al2O3 are 55.2 mV/pH and 55.6 mV/pH, which is very close to Nernst limitation. The sensitivity parameter (β) of the ISFET with H2O2- and of that with USP-grown Al2O3 are 8.64 and 9.72. In addition, the hysteresis effect, long-term stability, and the aging rate of the ISFET with the Al2O3 sensing membrane and the passivation layer are improved. The lifetimes of the ISFET with H2O2- and of that with USP-grown Al2O3 are 389 hours and 415 hours.
Next, the H2O2- and the USP-grown Al2O3 are applied to GaN-based optoelectronic devices of ultraviolet photodetectors (UV-PD) and blue light-emitting diode (LED). Different types of UV-PDs were fabricated and investigated, including metal-semiconductor-metal (MSM), Schottky-barrier (SB), and metal-insulator-semiconductor (MIS) UV-PDs. The responsivities of the oxide-passivated MSM-UV-PD, of the oxide-passivated SB-UV-PD, and of the MIS-UV-PD with H2O2- and with USP-grown Al2O3 as an insulator layer are 145 A/W, 5.22×10-4 A/W, 5.78×10-2 A/W, and 0.52 A/W. The detectivities of the oxide-passivated MSM-UV-PD, of the oxide-passivated SB-UV-PD, and of the MIS-UV-PD with H2O2- and with the USP-grown Al2O3 as an insulator layer are 4.55×1010 cmHz0.5W-1, 9.08×107 cmHz0.5W-1, 5.51×1011 cmHz0.5W-1, and 7.59×1011 cmHz0.5W-1. The mechanisms which caused dark current in the MSM-UV-PD and in the SB-UV-PD were measured and investigated. Also, different performances between these UV-PDs were discussed.
The Al2O3 served as a passivation and an antireflection layers of InGaN/GaN LED chips were fabricated and investigated. The USP-grown Al2O3 suppresses total internal reflection (TIR) and Fresnel loss reflection, which helps photons escape from the active layer to air. The maximum light output power and the maximum external quantum efficiency of the Al2O3-passivated LED chip are 355 mW and 43.75%. The LED chips are packaged as LED lamps. The LOP of the LED lamps with Al2O3-passivated LED chips is higher than the standard SiO2-passivated LED chips about 7.2 mW without significant variation in electrical performances.
Using H2O2 oxidation and USP deposition techniques to grow Al2O3 are very useful to enhance the performances of GaN-based semiconductor devices. In addition, both Al2O3 growth techniques have benefits of non-vacuum, low-cost in facility maintenance, high throughput, and safe liquid precursor. These advantages not only enhance the performances of GaN-based semiconductor devices, but reduce cost and time for device fabrication.

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