本研究藉由自製陽極氧化鋁模板(Anodic Aluminum Oxide, AAO)，以脈衝電鍍的方式沈積奈米銅線並施以不同的熱壓接條件，探討模板和奈米線之微結構、奈米線對接之機械性質、擴散行為和破斷面之破損機制。觀察模板微結構得知鋁的表面粗糙度越低，製作出的AAO其孔徑越大; 陽極處理時，透過電壓下降之速率調控可控制AAO底部分支狀結構厚度，藉此達到阻障層薄化以利於後續電鍍。觀察奈米線微結構得知以定電流、固定正向脈衝時間(Tf)並在特定的反電鍍時間(Tr)和停留時間(Toff)下，奈米線填孔率可達到100 %，可製作出長度10 μm、直徑約75 nm且長度均勻性良好(在10 μm的AAO內奈米線長度達10 μm的比例約為90 %)的銅奈米線。於室溫下以不同壓力對接奈米線，進一步於還原氣(95 % N2+5 % H2)加熱，結果顯示於室溫在壓接壓力為23±1 MPa壓接10分鐘後，其最大拉伸強度為 1.17± 0.13 MPa，再加熱至250 ℃持溫30分鐘後，其最大拉伸強度提升為 8.41 ± 0.27 MPa，於此條件下的拉伸破斷面顯示奈米線由於加熱表面擴散導致緊燒結成團簇，拉伸破裂呈現五種可能的破斷機制，除了沿奈米線接合之界面，大部分沿尚未反應的鋁和殘留的AAO之間劈裂，少部分由殘留的AAO分支狀起始點劈裂；研究結果顯示不同界面間的接合強度差異導致不均勻的劈裂行為。

Cu nanowire has been proposed as interconnects alternate for Cu to Cu bonding to fulfill the low-temperature packaging of high performance fine pitch electronic devices. This work investigated the manufacturing of Cu nanowire via the assistance of anodic aluminum oxide (AAO) template. The microstructures of AAO prepared under different pretreatments and barrier layer thinning processes were investigated. The 75 nm diameter copper nanowires with length of around 10 μm and good uniformity (~90 %10 μm NW in 10 μm AAO) were successfully fabricated by appropriate optimal stripping time (Tr) and pause time (Toff) for electroplating. The fabrication process achieved 100 % pore filling rate. The pulse plating gave rise to a flat Cu appearance on AAO surface. The bonding strength, diffusion behavior and fracture mechanism were investigated for the joined specimens. The joining was conducted by compressing bonding under forming gas (95% N2 + 5% H2).The maximum bonding strength achieved was 1.17 ± 0.13 MPa for bonding at room temperature with a bonding pressure of 23 ± 1 MPa for 10 minutes. The bonding strength increased to 8.41 ± 0.27 MPa when bonding at 250 °C for 30 minutes. The sintering cluster of nanowires was observed at the fracture surfaces of the high-temperature bonding specimens. The fracture mechanism investigation showed that the fracture may occur within copper nanowires and at the interface between the remaining aluminum and AAO. This indicated that there are 5 possible fracture interfaces due to different bonding strength between NWs and AAO and Al.

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