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Investigation and Fabrication of Al.32Ga.68N/GaN Heterostructure Field Effect Transistor
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Institute of Microelectronics
/92/ Master
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Author:
Su, Jun-Long
Advisor:
Hsu, Wei-Chou
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In this thesis, we utilized Cl2, BCl3 and Ar mixtures as the inductively coupled plasma source ...
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Clicks: 278
Downloads: 10
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Study of InGaP/GaAs Tunnel-Collector HBT with Compositionally Graded Base
 Internet public: 2102-06-24 AA
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Improved Symmetric Graded InxGa1-xAs (x=0.12→0.18→0.12) Channel High Electron Mobility Transistor
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Institute of Microelectronics
/93/ Master
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Author:
Chung, Wei-Cheng
Advisor:
Hsu, Wei-Chou
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In this thesis, the symmetrical graded channel AlGaAs / InxGa1-xAs (x=0.12→0.18→0.12) High Elect...
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Clicks: 265
Downloads: 3
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4
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Investigation of InAlAs/InxGa1-xAs Metamorphic High Electron Mobility Transistors (MHEMT’s) With Pseudomorphic and Symmetrically-graded Channels
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Institute of Microelectronics
/93/ Master
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Author:
Lin, San-Fu
Advisor:
Hsu, Wei-Chou
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In this thesis, the characteristics of the In0.425Al0.575As/InxGa1-xAs metamorphic high electron...
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Clicks: 237
Downloads: 1
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5
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Characteristics of InAlGaAs/InGaAs/InAlGaAs Heterostructure Field-Effect Transistors
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6
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Study of AlGaAs/InxGa1-xAs
Heterostructure Field-Effect Transistors Using AlGaAs/GaAs Buffer
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InGaP/GaAs Graded-Base Heterojunction Bipolar Transistor Grown by Metalorganic Chemical Vapor Deposition
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Institute of Microelectronics
/90/ Master
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Author:
Huang, Dong-Hai
Advisor:
Hsu, Wei-Chou
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In this thesis, we farbricated InGaP/GaAs graded-base heterojunction bipolar transistors by MOC...
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Clicks: 298
Downloads: 2
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8
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Investigation of Quasi-two-dimensional Light-Emitting Diodes with Addition of Polyvinylpyrrolidone
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Institute of Microelectronics
/109/ Master
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Author:
Liao, Cheng-Ze
Advisor:
Hsu, Wei-Chou
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In recent years, organic-inorganic perovskite light-emitting diodes have highly attracted great r...
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Clicks: 337
Downloads: 9
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9
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High Performance InAlGaN/GaN MOSHEMTs for Power Applications
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Institute of Microelectronics
/109/ Master
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Author:
Chan, Chun-Hao
Advisor:
Hsu, Wei-Chou
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In this thesis, we demonstrate a high performance InAlGaN/GaN MOSHEMT for power applications. We ...
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Clicks: 374
Downloads: 0
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10
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Investigation of High Stability Recessed-Gate InAlN/GaN High Electron Mobility Transistors
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Institute of Microelectronics
/109/ Master
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Author:
Pa, Kuan-Jen
Advisor:
Hsu, Wei-Chou
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In this work, we demonstrate a high stability recessed-gate InAlN/GaN metal-insulator-semiconduct...
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Clicks: 402
Downloads: 7
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