本實驗利用射頻磁控濺鍍法(RF Sputter)，在透明ITO基板上進行NbOx:0.1 wt% Mn透明薄膜沉積，並以蒸鍍機蒸鍍金屬上電極，製成ITO/NbOx:0.1 wt% Mn/Metal元件，在第一部分，我們利用Ti作為上電極使用，然而進行I-V量測後發現並無RRAM特性之表現。
第二部份針對製程上的參數進行調整，討論不同厚度(10 nm、20 nm、30 nm)對電阻式記憶體特性的關係，發現10 nm厚度太薄無法在電阻式記憶體上應用，30 nm則因厚度影響較20 nm需要較大的VForming值，在Cycle times及平均VSet、VReset上則無太大差別；而在濺鍍薄膜時進行基板加熱200oC則能夠視為薄膜在真空環境內退火，產生缺陷，使得元件Cycle times降低[1]，而在濺鍍過程中，氧離子補足缺陷產升氧儲存層，在20 nm幫助VSet、VReset穩定，而在30 nm則因厚度效應讓儲存層效果沒那麼好。
第三部份針對介電層進行成膜後退火200oC、300oC、400oC，實驗發現穩定度隨著退火溫度的上升，在20 nm、200oC的元件有最好的退火效果，Cycle times達108次並且有2個order；然而當退火溫上升至300oC、400oC，由於太多的氧空缺被填補，需較大的VForming導致導電通道的不穩定性。
最後，將實驗結果與ITO/NbOx/Al元件做比較，摻雜與未摻雜皆在高阻態以SCLC做為導機制，在低阻態以Ohmic做為導通機制；本實驗除了因為設置臨界電流(C.C.)使得Resistance order未能達到105外，其餘參數皆降低了操作電壓VSet、VReset，而在Cycle times也較未摻雜系統多。

In this paper, we fabricate 0.1 wt% Mn NbOx transparent amorphous films with RF sputter system to form ITO/NbOx:0.1 wt% Mn/Metal structure. In the first part, we use Ti as top electrode, and no RRAM performance was found. In the second part, we changed top electrode with Al finding bipolar resistive switching. VForming increased with increasing thicknesses. Then, substrate heating at 200oC during manufacturing process caused cycle times degraded due to ITO substrate annealed in vacuum environment. In the last part, thin films characteristic altered at different annealing temperatures. 20 nm thicknesses annealing at 200oC has the most stable RRAM characteristic. Finally, we compared ITO/NbOx:0.1 wt% Mn/Metal system with ITO/NbOx/Al system which apparently showed memory performance improved by the doping of Mn ionic in NbOx film.

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