本論文係研究利用未摻雜五環素(Pentacene)及鈉(Na)摻雜的五環素來成長P/N-type有機薄膜，並首次應用這些P/N-type有機薄膜於玻璃上製作有機垂直型雙載子接面電晶體(BJT)。吾人利用SEM來觀察有機薄膜的表面形態、AFM來測量薄膜表面的粗糙程度、EDS來檢視無機物摻雜的有效性。並利用玻璃基板成長有機薄膜製造P/N 二極體來確定摻雜後有機薄膜的正負型，及比較各種不同成長參數所完成二極體的電流-電壓特性。最後再以所得最佳成長參數在玻璃上研製有機垂直型雙載子接面光電晶體。實驗結果證實未摻雜的五環素薄膜具有P-type的特性，而摻雜鈉的五環素薄膜則含有N-type的特性。
本研究使用不同重量比的醯銨鈉無機鹽化合物與五環素混和物共同蒸鍍來得到不同含量的鈉摻。實驗結果顯示，NPN/PNP元件，常溫下摻雜醯銨鈉的元件在照與沒照鎢絲燈光(3mW/cm2)後電流增益/光暗電流比約為1.72/8.17及 1.11/4.09。

In this thesis, we utilized Pentacene and Pentacene doped by Na to prepare P type, and N type organic thin films, respectively. To dope Na, the Pentacene mixed by NaNH2 with various weight ratios were co-evaporated. And then these N/P organic thin films were used to develop organic vertical bipolar junction transistors on glass substrates. We used SEM to observe the films’ morphology; AFM to measure surface roughness and EDS to examine the dopant in the films. In addition, the parameters including the weight ratio of Pentacene to dopant Na in the evaporation, and growth rate were investigated and optimized to prepare organic vertical bipolar junction transistors.
The electric gain/optical gain of the developed vertical type NPN and PNP transistors on glass substrate without and with the illumination of tungsten lamp with light power of 3mW/cm2 are 1.72/8.17, and 1.11/4.09, respectively.

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