本實驗製作摻雜了摻雜量0.5wt%、1wt%、2wt%的塊材，測量其相對介電常數與介電損秏，找出有較高介電常數與較低損秏的摻雜比例。再以網版印刷的方式將混合好的鈦酸鍶鋇漿料網印於有Pt電極之氧化鋁基板上，以製成MIM結構之電容，進行探討其摻雜對鈦酸鍶鋇塊材與厚膜之結晶相與電性之影響，其中鈦酸鍶鋇厚膜之厚度約為26μm。
在晶相研究方面，本實驗以XRD進行量測，並以JADE 5軟體進行分析，以及使用SEM與EDS來觀察晶粒與找出第二相；電性方面則是使用Agilent E4980A阻抗分析儀量測電容值與介電損秏，並將電容值換算為相對介電常數εr。
經過塊材的實驗，由其收縮率、密度與電性量測可得到當摻雜重量百分濃度為1wt%時有較大的密度與相對介電常數，且其燒結溫度約為1200℃比無摻雜的鈦酸鍶鋇1350℃少了150℃，但當摻雜了玻料的塊材於1250℃燒結時產生了第二相導致其介電損秏大幅上升。再以塊材實驗結果製作鈦酸鍶鋇厚膜，而由C-V量測得知以1wt%、Bi2O3：B2O3=60：40摻雜的玻料比例在1225℃燒結時有最大相對介電常數與可調度，且在1250℃燒結時產生與塊材相同情形造成相對介電常數下降為介電損秏的提升，而由SEM分析結果當鈦酸鍶鋇介電層之晶粒較大時會有較高的可調度。

In this study, we produced BST bulk and thick film doped with Bi2O3 and B2O3. The contents of doping were 0.5wt%, 1wt% and 2wt%. Thick film was deposited on Pt/Al2O3 substrates by screen printing, and MIM structures were fabricated. We analized the crystallization and electric properties of the BST bulk and thick film.
The crystallization and microstructure were obtained by XRD, SEM and EDS measurement. The electrical properties of C-V were obtained by using Agilent E4980A Precision LCR Meter, and calculated the relative dielectric constants.
From the properties measurements of bulk shrinkage, density and measurements, we found the doping concentration of 1wt% presented the greater density and relative dielectric constant than these without doped. As the doped bulk of glass was sintered at 1250 ℃, the second phase was generated which lead to the increase of dielectric loss.
In the experiment of thick film, we found the dielectric tunability increasing with the sintering temperature because large grain size had the small internal stress. In conclusion samples with large grains have greater tunability.

[1] 呂琪瑋 and 曾俊元, "鈦酸鍶鋇薄膜在微波通訊的應用," 電子月刊, vol. 6, pp. 146-150.
[2] J. Nath, W. M. Fathelbab, and P. G. Lam, "Discrete Barium Strontium Titanate (BST) Thin-Film Interdigital Varactors on Alumina: Design, Fabrication, Characterization, and Applications," IEEE, pp. 552-555, 2006.
[3] S. H. Kim and J. H. Koh, "Li-doped (Ba,Sr)TiO3 thick film interdigital capacitors for microwave applications," Microelectron. Eng., vol. 86, pp. 59-62, 2009.
[4] S. M. Rhim, S. Hong, and H. Bak, "Effects of B2O3 Addition on the Dielectric and Ferroelectric Properties of Ba0.7Sr0.3TiO3 Ceramics," J. Am. Ceram. Soc., vol. 83, pp. 1145-1148, 2000.
[5] W. Chen, X. Yao, and X. We, "Structural and dielectric properties of Bi doped Ba0.6Sr0.4TiO3 ceramics," J. Mater. Sci., vol. 43, pp. 1144-1150, 2008.
[6] H. Zhang, X. Yao, and L. Zhangw, "Microstructure and Dielectric Properties of Barium Strontium Titanate Thick Films and Ceramics With a Concrete-Like Structure," J. Am. Ceram. Soc., vol. 90, pp. 2333-2339, 2007.
[7] 田民波, 半導體電子元件構裝技術.
[8] L. Zhou, P. M. Vilarinho, and J. L. Baptista, "Dielectric properties of bismuth doped Ba1-xSrxTiO3," J. Eur. Ceram. Soc., vol. 21, pp. 531-534, 2001.
[9] 工業材料研究所, 精密陶瓷技術概論, 1987.
[10] D. W. Richerson, Modern ceramic engineering properties, processing and use in design, 1992.
[11] 周智豪, (Mg0.95Zn0.05)TiO3-(Na1/2Nd1/2)TiO3介電陶瓷材料之研製及新型Butterworth濾波器之研發, 2005.
[12] H. Diamond, "Variation of Permittivity with Electric Field in Perovskite-Like Ferroelectrics," J. Appl. Phys., vol. 32, pp. 909-915, 1961.
[13] J. Nath, D. Ghosh, J.-P. Maria, A. I. Kingon, W. Fathelbab, P. D. Franzon, and M. B. Steer, "An Electronically Tunable Microstrip Bandpass Filter Using Thin-Film Barium–Strontium-Titanate(BST) Varactors," IEEE, vol. 53, pp. 2707-2711, 2005.
[14] D. Zhang, W. Hua, C. Meggs, B. Su, T. Price, D. Iddles, M. J. Lancaster, and T. W. Button, "Fabrication and characterisation of barium strontium titanate thick film device structures for microwave applications," J. Eur. Ceram. Soc., vol. 27, pp. 1047-1051, 2007.
[15] 魏炯權, 材料科學.
[16] 林威智, "Study on Size Effect of the grid dimensions in sheet metal forming using photolithography technique," 2002.
[17] A. Giere, Y. Zheng, H. Maune, M. Sazegar, F. Paul, X. Zhou, J. R. Binder, S. Muller, and R. Jakoby, "Tunable dielectrics for microwave applications," IEEE, vol. 2, pp. 1-2, 2009.
[18] M. Valant and D. Suvorov, "Low-Temperature Sintering of (Ba0.6Sr0.4)TiO3," J. Am. Ceram. Soc., vol. 87, pp. 1222-1226, 2004.
[19] Z. JIWEI, "Direct-current field dependence of dielectric properties in B2O3-SiO2 glass doped Ba0.6Sr0.4TiO3 ceramics," J. Mater. Sci., vol. 37, pp. 3739-3745, 2002.
[20] Z. Jiwei, Y. Xi, C. Xiaogang, Z. Liangying, and H. Chen, "Dielectric properties under dc-bias field of Ba0.6Sr0.4TiO3 with various grain sizes," Mater. Sci. Eng., vol. B94, pp. 164-169, 2002.
[21] X. Liang, W. Wu, and Z. Meng, "Dielectric and tunable characteristics of barium strontium titanate modified with Al2O3 addition," Mater. Sci. Eng., vol. B99, pp. 366-369, 2003.
[22] 沈一丁 and 李小瑞, 陶瓷添加劑, 2004.
[23] 魏炯權, 電子陶瓷材料, 2004.