本論文以對溫度敏感之電氣參數法 ( Temperature Sensitive Electrical Parameters, TSEP ) 作為研究主軸，過去對於IGBT模組溫度的量測方式採用開蓋塗黑封裝之特殊處理，利用紅外線感測進行IGBT模組內各個晶片的溫度量測及溫度模型推估，採用這樣的方式可以直接又準確地量測到在模組中的晶片溫度，但模組的開封狀態與實際之封裝狀態差異可能造成溫度預估誤差，因此本研究採用對溫度敏感之電氣參數法，透過觀察模組電氣特性來推估模組在正常封裝的情形下之溫度。本論文會先介紹使用紅外線熱顯像儀 ( Infrared Thermal Imager, IR ) 方法量測晶片溫度與使用TSEP方法之差異，接著使用TSEP方法針對不同的晶片推估熱模型參數，以能夠在線測量及推估IGBT模組中晶片溫度為目標著手進行相關研究，實現常態模組下內部晶片的溫度估測應用。

This thesis focuses on Temperature Sensitive Electrical Parameters (TSEP) as the main research topic. In the past, a special treatment involving opening and blackening packaging was used to measure the temperature of IGBT modules. This method involved using infrared sensing to measure the temperature of each chip inside the module in order to derive the temperature model. Although this method could directly and accurately measure chip temperatures inside the module, differences between actual packaging conditions and opened packaging may cause errors in temperature estimation. Therefore, this study uses TSEP to estimate module temperatures under normal packaging conditions by observing their electrical characteristics. The thesis first introduces how an infrared thermal imager (IR) can be used to measure chip temperatures and compares it with using the TSEP method. Subsequently, the TSEP method is employed to estimate thermal model parameters for different chips, with the aim of conducting relevant research to enable on-line measurement and estimation of chip temperatures in IGBT modules. The ultimate goal is to achieve the application of temperature estimation for internal chips in normal operating modules.

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