簡易檢索 / 詳目顯示

研究生: 陳皓威
Chen, Hao-Wei
論文名稱: 鋇金屬硫氧化物的合成與光學性質
Syntheses and Optical Properties of a Barium Oxychalcogenide
指導教授: 許桂芳
Hsu, Kuei-Fang
學位類別: 碩士
Master
系所名稱: 理學院 - 化學系
Department of Chemistry
論文出版年: 2018
畢業學年度: 106
語文別: 中文
論文頁數: 51
中文關鍵詞: 硫氧化物螢光性質寬能隙非線性光學材料高穿透度
外文關鍵詞: oxychalcogenide, photoluminescence, wide band gap, nonlinear optical materials, high transparence
相關次數: 點閱:134下載:0
分享至:
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報
  • 利用溴化鉀作為助熔劑,成功地於高溫爐合成出具有非中心對稱骨架結構的鋇金屬硫氧化物,此化合物的能隙高達3.75 eV,並具有良好的光致放光行為。其結構骨架是由GaO4 與GaSO3 四面體以共用角方式相互鍵結形成。沿c 軸方向延伸構成三維的六角柱結構,團簇結構的排列朝著特定的方向。
    鋇金屬硫氧化物的通光範圍為2.5 μm – 12.5 μm,在紅外光區有良好的穿透度,加上具備寬能隙的優勢,意味著我們化合物有作為紅外非線性光學材料的潛力。不僅如此,在螢光性質部分,室溫情況下以激發光波長325 nm 照射放出黃綠光,放射光波長落在542 nm,且具有非常高強度的放光特性。

    A barium oxychalcogenide with noncentrosymmetric framework was synthesized using KBr flux in the high-temperature furnace. This compound has a wide band gap of 3.75 eV and exhibits good photoluminescence (PL) behavior. It is constructed by GaO4 and GaSO3 tetrahedral via corner-sharing. A three-dimensional hexagonal column along c axis and all the cluster arrange in a specific direction.
    Both the optical transparence for the sample begin from infrared region 2.5–12.5 μm and the advantage of the wide band gap mean that this compound has the potential application as nonlinear optical (NLO) materials. In addition, the PL property of it is investigated at room temperature exhibits a strong emission band at 542 nm under excitation wavelength of 325 nm.

    摘 要 I Abstract II 誌 謝 VI 目 錄 VII 圖目錄 X 表目錄 XII 第一章 緒論 1 第二章 合成與鑑定 8 2.1合成方式 8 2.2能量散佈光譜分析(EDS) 10 2.3單晶X光繞射結構解析(X-ray Crystallography) 12 2.4粉末X光繞射鑑定(PXRD) 14 2.5差示熱分析(Differential Thermal Analysis, DTA) 14 2.6紫外光–可見–近紅外光光譜儀分析(UV–vis–NIR Reflection Spectroscopy) 15 2.7 紅外光光譜( IR Spectroscopy) 16 2.8 螢光光譜量測( Photoluminescence Measurement) 16 2.9 拉曼光譜(Raman Spectroscopy) 16 2.10 二倍頻量測(Second Harmonic Generation Measurement) 17 第三章 結果與討論 19 3.1結構描述 19 3.2元素分析 30 3.3晶相與純度分析 31 3.4熔點及再結晶點分析 32 3.5能隙與通光範圍量測 33 3.6螢光性質 35 3.7非線性光學特性 38 第四章 結論 41 參考文獻 42 附錄 47 表A– 1化合物Ba3Ga6K0.06S2O10.03單晶繞射數據 47 表A– 2化合物Ba3Ga6K0.06S2O10.03原子位置、熱擾動參數及佔有率 48 表A– 3化合物Ba3Ga6K0.06S2O10.03全部鍵長(Å) 49

    (1) Boyd, G.; Buehler, E.; Storz, F.; Wernick, J. IEEE Journal of Quantum Electronics 1972, 8, 419.
    (2) Chen, C.-t.; Liu, G.-z. Annual Review of Materials Science 1986, 16, 203.
    (3) Byer, R. L. IEEE Journal of Selected Topics in Quantum Electronics 2000, 6, 911.
    (4) Tang, C. L.; Bosenberg, W. R.; Ukachi, T.; Lane, R. J.; Cheng, L. K. Proceedings of the IEEE 1992, 80, 365.
    (5) Driel, H. M. V. IEEE Circuits and Devices Magazine 1994, 10, 30.
    (6) Aytur, O.; Dikmelik, Y. IEEE Journal of Quantum Electronics 1998, 34, 447.
    (7) Kang, L.; Ramo, D. M.; Lin, Z.; Bristowe, P. D.; Qin, J.; Chen, C. Journal of Materials Chemistry C 2013, 1, 7363.
    (8) Halasyamani, P. S.; Poeppelmeier, K. R. Chemistry of Materials 1998, 10, 2753.
    (9) Auston, D. H.; Ballman, A. A.; Bhattacharya, P.; Bjorklund, G. J.; Bowden, C.; Boyd, R. W.; Brody, P. S.; Burnham, R.; Byer, R. L.; Carter, G.; Chemla, D.; Dagenais, M.; Dohler, G.; Efron, U.; Eimerl, D.; Feigelson, R. S.; Feinberg, J.; Feldman, B. J.; Garito, A. F.; Garmire, E. M.; Gibbs, H. M.; Glass, A. M.; Goldberg, L. S.; Gunshor, R. L.; Gustafson, T. K.; Hellwarth, R. W.; Kaplan, A. E.; Kelley, P. L.; Leonberger, F. J.; Lytel, R. S.; Majerfeld, A.; Menyuk, N.; Meredith, G. R.; Neurgaonkar, R. R.; Peyghambarian, N. G.; Prasad, P.; Rakuljic, G.; Shen, Y. R.; Smith, P. W.; Stamatoff, J.; Stegeman, G. I.; Stillman, G.; Tang, C. L.; Temkin, H.; Thakur, M.; Valley, G. C.; Wolff, P. A.; Woods, C. Appl. Opt. 1987, 26, 211.
    (10) Abrahams, S. C.; Bernstein, J. L. The Journal of Chemical Physics 1973, 59, 1625.
    (11) Shoji, I.; Kondo, T.; Kitamoto, A.; Shirane, M.; Ito, R. J. Opt. Soc. Am. B 1997, 14, 2268.
    (12) Boyd, G.; Kasper, H.; McFee, J. IEEE Journal of Quantum Electronics 1971, 7, 563.
    (13) Akiko Harasaki; Kiyoshi Kato Japanese Journal of Applied Physics 1997, 36, 700.
    (14) Byer, R. L.; Choy, M. M.; Herbst, R. L.; Chemla, D. S.; Feigelson, R. S. Applied Physics Letters 1974, 24, 65.
    (15) Das, S.; Bhar, G. C.; Gangopadhyay, S.; Ghosh, C. Appl. Opt. 2003, 42, 4335.
    (16) Van Mieghem, P. Reviews of Modern Physics 1992, 64, 755.
    (17) Kostyukova, N. Y.; Boyko, A. A.; Badikov, V.; Badikov, D.; Shevyrdyaeva, G.; Panyutin, V.; Marchev, G. M.; Kolker, D. B.; Petrov, V. Opt. Lett. 2016, 41, 3667.
    (18) Tyazhev, A.; Kolker, D.; Marchev, G.; Badikov, V.; Badikov, D.; Shevyrdyaeva, G.; Panyutin, V.; Petrov, V. Opt. Lett. 2012, 37, 4146.
    (19) Badikov, V.; Badikov, D.; Shevyrdyaeva, G.; Tyazhev, A.; Marchev, G.; Panyutin, V.; Noack, F.; Petrov, V.; Kwasniewski, A. Opt. Mater. Express 2011, 1, 316.
    (20) Kuo, S.-M.; Chang, Y.-M.; Chung, I.; Jang, J.-I.; Her, B.-H.; Yang, S.-H.; Ketterson, J. B.; Kanatzidis, M. G.; Hsu, K.-F. Chemistry of Materials 2013, 25, 2427.
    (21) Yin, W.; Feng, K.; Mei, D.; Yao, J.; Fu, P.; Wu, Y. Dalton Trans 2012, 41, 2272.
    (22) Liu, B.-W.; Zeng, H.-Y.; Zhang, M.-J.; Fan, Y.-H.; Guo, G.-C.; Huang, J.-S.; Dong, Z.-C. Inorganic chemistry 2015, 54, 976.
    (23) Isaenko, L. I.; Yelisseyev, A. P.; Lobanov, S. I.; Krinitsin, P. G.; Molokeev, M. S. Optical Materials 2015, 47, 413.
    (24) Lekse, J. W.; Moreau, M. A.; McNerny, K. L.; Yeon, J.; Halasyamani, P. S.; Aitken, J. A. Inorganic chemistry 2009, 48, 7516.
    (25) Lin, H.; Zhou, L.-J.; Chen, L. Chem. Mater. 2012, 24, 3406.
    (26) Calvagna, F.; Zhang, J.; Li, S.; Zheng, C. Chemistry of Materials 2001, 13, 304.
    (27) Smura, C. F.; Parker, D. R.; Zbiri, M.; Johnson, M. R.; Gál, Z. A.; Clarke, S. J. Journal of the American Chemical Society 2011, 133, 2691.
    (28) Zhou, T.; Wang, Y.; Jin, S.; Li, D.; Lai, X.; Ying, T.; Zhang, H.; Shen, S.; Wang, W.; Chen, X. Inorganic chemistry 2014, 53, 4154.
    (29) Sambrook, T.; Smura, C. F.; Clarke, S. J.; Ok, K. M.; Halasyamani, P. S. Inorganic chemistry 2007, 46, 2571.
    (30) Xia, Y.; Huang, F.; Wang, W.; Wang, Y.; Yuan, K.; Liu, M.; Shi, J. Optical Materials 2008, 31, 311.
    (31) Broadley, S.; Gál, Z. A.; Corà, F.; Smura, C. F.; Clarke, S. J. Inorganic chemistry 2005, 44, 9092.
    (32) Li, L.; Wong, K.-L.; Li, P.; Peng, M. Journal of Materials Chemistry C 2016, 4, 8166.
    (33) Xia, Y.; Huang, F.; Wang, W.; Wang, A.; Shi, J. Solid State Sciences 2007, 9, 1074.
    (34) Tandon, S. P.; Gupta, J. P. physica status solidi (b) 1970, 38, 363.
    (35) Boyd, G. D.; Ashkin, A.; Dziedzic, J. M.; Kleinman, D. A. Physical Review 1965, 137, A1305.
    (36) Kulyuk, L. L.; Shutov, D. A.; Strumban, E. E.; Aktsipetrov, O. A. J. Opt. Soc. Am. B 1991, 8, 1766.
    (37) Nasu, H.; Okamoto, H.; Kurachi, K.; Matsuoka, J.; Kamiya, K.; Mito, A.; Hosono, H. J. Opt. Soc. Am. B 1995, 12, 644.
    (38) Alford, W. J.; Smith, A. V. J. Opt. Soc. Am. B 2001, 18, 524.
    (39) Dinakaran, S.; Verma, S.; Jerome Das, S.; Kar, S.; Bartwal, K. S.; Gupta, P. K. Physica B: Condensed Matter 2010, 405, 1809.
    (40) Boyer, M.; Veron, E.; Becerro, A. I.; Porcher, F.; Suchomel, M. R.; Matzen, G.; Allix, M. CrystEngComm 2015, 17, 6127.
    (41) Chen, C.; Wu, Y.; Li, R. Journal of Crystal Growth 1990, 99, 790.
    (42) Kim, N. H.; Kim, H. W.; Seoul, C.; Lee, C. Materials Science and Engineering: B 2004, 111, 131.
    (43) Lei, M.; Ye, C. X.; Ding, S. S.; Bi, K.; Xiao, H.; Sun, Z. B.; Fan, D. Y.; Yang, H. J.; Wang, Y. G. Journal of Alloys and Compounds 2015, 639, 102.
    (44) Yoo, J.-H.; Rafique, S.; Lange, A.; Zhao, H.; Elhadj, S. APL Materials 2018, 6, 036105.
    (45) Ho, C.-H.; Tseng, C.-Y.; Tien, L.-C. Opt. Express 2010, 18, 16360.
    (46) Liang, C. H.; Meng, G. W.; Wang, G. Z.; Wang, Y. W.; Zhang, L. D.; Zhang, S. Y. Applied Physics Letters 2001, 78, 3202.
    (47) Binet, L.; Gourier, D. Journal of Physics and Chemistry of Solids 1998, 59, 1241.
    (48) Aono, T.; Kase, K. Solid State Communications 1992, 81, 303.
    (49) Masataka, H.; Kohei, S.; Hisashi, M.; Yoshinao, K.; Akinori, K.; Akito, K.; Takekazu, M.; Shigenobu, Y. Semiconductor Science and Technology 2016, 31, 034001.
    (50) Masataka, H.; Hisashi, M.; Yoshinao, K.; Akito, K. Japanese Journal of Applied Physics 2016, 55, 1202A1.
    (51) Man Hoi, W.; Yoshiaki, N.; Akito, K.; Shigenobu, Y.; Masataka, H. Applied Physics Express 2017, 10, 041101.

    無法下載圖示 校內:2023-07-19公開
    校外:不公開
    電子論文尚未授權公開,紙本請查館藏目錄
    QR CODE