本論文中，主要透過共濺鍍法成長金屬氧化物寬能隙半導體系列薄膜的製作與應用。透過共濺鍍法成長的方式，分別將氧化鎂銦與氧化鎵銦兩種材料應用到紫外光波段之金屬-半導體-金屬結構光感測器和紫外光電晶體元件。
首先，我們以共濺鍍的方式將氧化鎂以及氧化銦製備非晶氧化鎂銦薄膜，藉由調整其能隙寬度與載子濃度應用在紫外光感測器上。透過能隙寬度的分析，氧化鎂銦材料能隙約為4.46電子伏特，其對應的偵測波長為280奈米, 可運用於太陽盲光波段的偵測。於10V偏壓下，元件的暗電流、光電流與光暗電流比分別為 5.5 × 10^-8 A、5.4 × 10^-4 A、9.2 × 10^3。施加2V順向偏壓，其紫外光對可見光的拒斥比約為4.37 × 10^4，元件量測光響應度為1.47 A/W。在低頻雜訊的分析下，等效雜訊功率為7.77 × 10^-11 W，其相對應檢測度1.75 × 10^11 cm·Hz0.5W−1。另一方面，我們利用氧化鎵摻雜氧化銦製備氧化鎵銦紫外光感測器，並透過改變氧流量的方式，比較對元件特性的影響，由於高密度的氧空缺被氧氣所填補，使得薄膜載子數下降，有效降低暗電流值。於量測結果下發現，氬氣氧氣流量比為4%的樣品呈現出最佳的特性，在施加10 V順向偏壓下，元件的暗電流、光電流與光暗電流比分別為2.9×10^-11 A、6.6×10^-6 A、2.2×10^5。另外，在2V順向偏壓，具有1.1×10^5紫外光對可見光的拒斥比以及0.14 A/W的光響應度。
此外，我們亦製作了氧化鎵銦光薄膜電晶體，透過改變銦靶材濺鍍的功率，可發現其光電相關特性與銦含量有相當大的關係，銦含量多寡影響薄膜內部氧空缺數量，而其截止波長也隨著銦含量增加而紅移。實驗樣本B表現出較佳的臨界電壓,次臨界擺幅以及開關電流比分別為1.1V、1.45 V/dec以及4.5x 10^6。而其紫外光響應則為0.09A/W以及8×10^4 紫外光對可見光拒斥比。最後，為了近一步提升氧化鎵銦光薄膜電晶體相關特性，我們進一步利用原子層沉積系統製備氧化鋁做為介電層，替代原本的二氧化矽介電層，所量測到的場效遷移率,臨界電壓,次臨界擺幅以及開關電流比分別為5.36 cm2/Vs、1.3 V、0.096 V/dec以及7.39x10^7，其可歸因於高介電常數使得閘極電容值上升以及優異的介面品質有效減少介面缺陷密度。而其光響應以及紫外光對可見光拒斥比分別為0.38A/W及3 x 10^5。照光特性的改善則歸功於原子層沉積系統沉積出較緻密的薄膜，能有效降低介面缺陷密度，使得光生載子不易受捕捉，並具備極大潛力應用於光電相關元件。

The main goal in this thesis is fabrication and application the wide bandgap metal oxide semiconductor by the co-sputtering deposition. By using the co-sputtering method, the two materials, magnesium doping indium oxide (MgInO) and gallium doping indium oxide (IGO), are applied to the metal-semiconductor-metal ultraviolet photodetector and ultraviolet phototransistor.
First, we fabricated MgInO ultraviolet photodetectors by doping indium oxide with magnesium oxide through co-sputtering deposition method. The energy bandgap and carrier concentration can be adjusted, the energy gap of the magnesium indium oxide is approximately at 4.46 eV, and the corresponding wavelength approximately at 280 nm, which can be used in solar-blind ultraviolet detection. Under the 10V bias voltage, the dark current, photocurrent, and photo to dark current ratio of the device were 5.5×10^-8 A、5.4×10^-4A and 9.2×10^3, respectively. The experimental results indicate that the UV-to- visible rejection ratio is 4.37 × 10^4, and the responsivity is 1.47 A/W when a forward bias a voltage of 2 V. Furthermore, the noise equivalent power and detectivity are 7.77×10-11 W and 1.75×10^11 cm H0.5W-1 with a 2 V bias voltage, respectively. On the other hand, we also used gallium oxide doped indium oxide further demonstrate IGO ultraviolet photodetector, and compared the effect of the device characteristics by changing the oxygen concentrations. Owing to a large number of oxygen vacancies are filled by oxygen, the carrier concentration is reduced, effectively reducing the dark current value. The measurement results show that the sample with an argon to oxygen flow rate of 4% showed the best characteristics. For the applied bias of 10 V, the dark current, photo current, and photo to dark current ratio were 2.9×10^-11 A、6.6×10^-6 A and 2.2×10^5, respectively. In addition, the device exhibited the 1.1×10^5 UV-to-visible rejection ratio with a responsivity of 0.14 A/W at 2V applied bias.
Additionally, we have also fabricated IGO phototransistors with different deposition powers of the In2O3 target, the device performance revealed that oxygen vacancies are strongly dependent on indium content, when the deposition power increased, the number of oxygen vacancies, which act as charge carriers to improve the device performance; the indium content increases while the cutoff wavelength red shifts simultaneously. The best performance was recorded at a threshold voltage of 1.1 V, subthreshold swing of 1.45 V/dec, and on-off current ratio of 4.5 × 10^6 in sample B. The UV sensing showed the characteristics of responsivity is 0.09A/W and 8 × 10^4 UV-to-visible rejection ratio. Lastly, in order to further enhance the relevant characteristics of IGO phototransistors, used Al2O3 replaced SiO2 as a dielectric layer, which prepared by ALD. The optimal parameters field-effect mobility, threshold voltage, subthreshold swing, and on-off current ratio are 5.36 cm2/Vs、1.3 V、0.096 V/dec and 7.39x10^7, respectively, that can be attributed to the high dielectric constant provides gate capacitance increase and the excellent interface quality with low interface trapping density. In addition, the improved response under UV illumination exhibited the responsivity was 0.38 A/W, and UV-to-visible rejection ratio of the device was 3 × 10^5. This result can be attributed to the fact that dense film with Al2O3 dielectric layer had less trap states, which can effectively avoid capture photogenerated carriers, and have great potential applications in optoelectronic and electronic devices.

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