傳統使用鎳或鋁金屬誘發結晶(MIC)低溫多晶矽薄膜的製程時間長且熱消耗(thermal budget)也高較不適合在一般玻璃基板上製造低成本大面積的太陽電池。本論文提出一種新型金屬誘發結晶技術可在一般玻璃基板上成長低溫(＜200oC)多晶矽薄膜且無需長時間的高溫回火製程。吾人並使用該低溫多晶矽薄膜成功製造出太陽能電池，來證實本技術的可行性。

　 本技術係使用溅鍍沈積氧化鋅摻雜鋁(ZnO：Al)薄膜於長有銦錫氧化物(ITO)的玻璃基板上，並以0.5％(volume ratio)的鹽酸液蝕刻成粗糙化的表面。然後，以PECVD系統在基板溫度200oC下沈積晶粒為0.5-1µm的低溫多晶矽薄膜。經過多種物理與光電特性量測包括SEM、XRD、FTIR以及RAMAN測試，證實該低溫多晶矽薄膜的成長係先由沈積非晶矽薄膜，然後再經銦矽合金共融(eutectic transformation)及銦金析出，最後轉換成為多晶矽薄膜。故本法也是屬於金屬誘發結晶技術的一種。比起傳統金屬誘發結晶法，本技術有熱消耗低，金屬污染低，不需額外退火製程與高結晶度的優點。

經由實際使用該低溫多晶矽薄膜在玻璃基板上成功製造出太陽能電池證實本技術的可行。太陽能電池的主要特性為Voc＝0.66V, Jsc＝2.96mA, FF＝44% and 轉換效率＝1.56%。此外，我們並發現粗糙的氧化鋅鋁層可提升多晶矽薄膜晶粒大小及減少表面的反射 有助於太陽能電池特性的提升。

The thermal budget and process time of the traditional metal induced crystallization (MIC) technology using Ni metal and a few hours 500-600 oC annealing are still higher and longer, respectively for preparing a low cost solar cell on glass substrate. In this thesis, we develop a new MIC technology with temperature can be lowered to 200 oC and without the long time and high temperature annealing.

The new MIC technology includes sputtering an AZO thin film on an ITO glass substrate firstly. Then the AZO film is etched with 0.5% (volume ratio) HCL solution to form a textural surface. Finally, deposit a-Si film on the AZO at 200 oC by a PECVD system. During the deposition, the thin film is also transformed from an amorphous structure to a poly one through Si-In eutectic transformation, In ion precipitation, and re-crystallization. Besides, if a textural AZO is used; we find grain size of the poly film is also enhanced significantly. We use SEM, XRD, FTIR, and RAMAN to characterize physical and photoelectric properties of films. Compared to the conventional MIC method, the developed new method has the advantage of lower temperature(less 200 oC), less thermal budget, low metal contamination, higher Xc (crystalline volume fraction), and without an extra annealing process.

Furthermore, we successfully fabricate the low temperature poly thin film solar cells prepared by the developed method to show its applicability. The initial performances of solar cell is Voc=0.66V, Jsc=2.96mA, FF=44% and conversion efficiency=1.56% under AM1.5G simulated spectrum of sunlight.

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