互補式電阻切換記憶體(Complementary Resistive Switch, CRS)由於其在低電壓時始終保持高阻態的特性，因此目前被認為是交錯式被動陣列(Crossbar Passive Array)中電路產生潛行電流的最佳解決方案。然而其可重複操作性卻是目前最大的挑戰(<100次)。本論文將試著透過改變中間層(Interconnection Layer)的金屬以及絕緣層氮化鋁的晶向以改善元件的可靠度(>500次)。
在本實驗第一部分，我們改變了CRS元件的中間層金屬，分別為Ti、Cu和Ag。實驗發現，以Ag為中間層可以有效增加元件的可重複操作性達到500次，並且具有最低的操作電壓。
在本實驗第二部分，我們試圖利用不同晶向氮化鋁的雙極性電阻切換記憶體驗證製成CRS的先決條件|Vreset|>|Vset|/2，並透過實驗證實非晶態氮化鋁BRS元件不符合先決條件，因此無法表現出完整CRS元件特性。最後探討了氮化鋁電阻式記憶體的導電機制，發現在低阻態時主要為歐姆傳導，而在高阻態時則是空間電荷限制電流為主要機制。

In this study, we change the metal interconnection layer (Ti, Cu, and Ag) of AlN-based complementary resistive switches (CRS), and we find that the devicesused Ag as the interconnection layer can effectively increase the endurance up to 500 times and have the lowest operating voltage. In addition, the characteristics of CRS with different orientation AlN films and the switching mechanism are also investigated in this thesis. It is found that the mechanism in the low resistance state (LRS) exhibits an ohmic conduction behavior with a slope of 1.00. However, the conduction mechanism in the high resistance state (HRS) is totally different from the one in LRS. The charge transport behavior completely conforms to a typical space charge limited current (SCLC).

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