| 研究生: |
吳允辰 Wu, Yun-Chen |
|---|---|
| 論文名稱: |
正銅電極矽基太陽能電池效率改善 Improvement on Conversion Efficiency of Si-base Solar Cells with Copper Electrode |
| 指導教授: |
李文熙
Lee, Wen-Hsi |
| 學位類別: |
碩士 Master |
| 系所名稱: |
電機資訊學院 - 電機工程學系 Department of Electrical Engineering |
| 論文出版年: | 2017 |
| 畢業學年度: | 105 |
| 語文別: | 中文 |
| 論文頁數: | 76 |
| 中文關鍵詞: | 正面電極 、高效率 、太陽能電池 、歐姆接觸 、網版印刷 |
| 外文關鍵詞: | positive electrode, high efficiency, solar cell, ohmic contact, screen printing |
| 相關次數: | 點閱:67 下載:0 |
| 分享至: |
| 查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
傳統化石燃料在不斷開採下愈來愈少的情況下,綠色能源的使用逐漸成為全球趨勢焦點,其中又以太陽能電池為熱門替代能源。因此,更多關於矽基太陽能電池生產的細節必須被開發研究。
本研究使用改良低成本創新的銀包銅金屬膏及兩階段高低溫燒結技術來完成正面電極的製作,目的為取代傳統正銀電極材料高成本以及含鉛玻璃的使用,並避免使用含鉛的玻璃,以開發出環保及低成本的「高導電率、高轉換效率、印刷式正銅電極」之太陽能電池應用。
在製程上使用抗反射膜(Anti Reflection Coating, ARC)薄膜沉積及背鋁印製之單晶矽太陽能電池基板,將自製的銀包銅粉體配製出高固含量的金屬導電膏,再利用綠光雷射(Green Laser)在抗反射層開槽孔形成H圖案,之後在矽基板進行網版印刷。在第一階段低溫燒結過程中,經由熱處理形成歐姆接觸,再利用高溫快速熱退火系統(Rapid Thermal Annealing, RTA)完成燒結。在燒結中,表面之奈米銀做為金屬銅粉與基板接觸的黏著劑,而銀包覆率大於90%的銅在燒結中能避免銅氧化得太嚴重,並可提升元件導電率。
各製程結束後分別透過四點探針、掃描式電子顯微鏡(SEM)、能量色散X射線光譜儀(EDS)、聚焦離子束(FIB)、穿透式電子顯微鏡(TEM)、傳輸線模型(Transmission Line Model,TLM) 及太陽光能量效率量測系統來分析材料電性、微結構、特徵接觸電阻及轉換效率。
本研究探討改良新型銀包銅金屬膏及燒結製程,可達成電阻率為6.70×10-6Ω-cm,既而傳統銀膏電阻率為4.83×10-6 Ω-cm,電性比較相差不遠,又可同時達成正面電極所需之歐姆接觸與較低之特徵接觸電阻,量測結果其特徵接觸電阻為0.0012Ωcm2,應用於太陽能電池轉換效率為18.13%,仍低於目前業界普遍所用的正銀電極材料。本研究之低成本改良新型銀包銅金屬膏搭配二階段燒結技術,成功開發出環保、低成本、低特徵接觸電阻、高轉換效率之矽基太陽能電池正面電極。
In this study, the use of improved low-cost innovative Cu core Ag shell metal paste and two-stage high and low temperature sintering technology to complete the production of positive electrode. The purpose is to replace the traditional high-cost silver electrode materials and the use of lead-containing glass, and to avoid the use of lead-containing glass. To develop environmentally friendly and low cost high conductivity of the positive electrode material.
In this study, a simple and effective method for the reduction and reduction was developed to synthesize experimental copper-coated copper powder with a coverage rate of over 90%. This not only prevented the oxidation of copper during the firing process, but also improved the conductivity. The And then through the paste technology will be made into the solar cell front electrode wire, and without losing the efficiency of its solar cells quality, expect to replace the relatively high price of traditional silver paste and the use of lead glass , To achieve cost savings and eco-friendly purposes.
In this study, we made a high solid content of silver-clad copper metal paste, not only can be printed in the 60μm narrow line, and has good rheology. Metal paste due to the organic solvent, glass, dispersant content ratio, solid content and the impact of three roller technology, and finally due to the different sintering temperature caused by the pros and cons of electrical properties. It is worth studying to explore these and final results. In the low-temperature sintering system process, these silver-coated copper paste sintered to 200 ℃ ~ 350 ℃, observed metal paste and silicon substrate contact, found in the low temperature sintering of organic solvents to volatilize, making the metal paste and silicon substrate more stable. So that the electrode of the solar cell element is peeled off from the silicon substrate at high temperatures.
Finally, we show that the silver-coated copper paste has a denser phenomenon at the sintering temperature of 300 ℃, and also has a low resistivity of 0.287 Ωcm2 at the temperature of the characteristic contact resistance.
Then, in the high-temperature sintering system process, the research data show that the lowest resistivity is 6.70×10-6Ωcm and the characteristic contact resistivity is 0.0012Ωcm2 when the one-stage low-temperature sintering 300 ℃ plus two-stage high temperature sintering 800 ℃. The resistivity of the silver-clad copper paste in our study is close to that of the conventional silver paste (≈4.83×10-6Ωcm). And the characteristic contact resistance is also close to the resistivity (≈0.001Ωcm2) of the conventional silver paste sintered in air. In spite of this, taking into account other factors, especially the stability of the back aluminum electrode and PN bonding, for low resistance and increased conductivity. Furthermore, it is proved that the density of the silver-coated copper paste is good after the high-temperature sintering and the contact between the front electrode and the silicon substrate is close, and then the ohmic contact is formed. Compared with the traditional silver paste not only cost reduction, and make the product more environmentally friendly.
In the study of the best parameter, the solar cell efficiency parameters are as follows. In the two temperature sintering process, Voc is about 0.60V, Isc is about 0.11A, the filling factor is about 32.15%, the efficiency is about 5.014%. With the high temperature sintering, Voc is about 0.62V, Isc is about 0.187A, the filling factor is about 73.93%, the efficiency is about 18.13%. The results show that our research on copper electrode technology is very successful.
[1] S. Kontermann et al., "Physical understanding of the behavior of silver thick-film contacts on n-type silicon under annealing conditions," Solar Energy Materials and Solar Cells, vol. 93, no. 9, pp. 1630-1635, 2009.
[2] H. Nilsonne, "Identification and Commercialization of HighlyValuable Manufacturing Innovations: A case study of innovations in the solar energy market," ed, 2012.
[3] C. Battaglia, A. Cuevas, and S. De Wolf, "High-efficiency crystalline silicon solar cells: status and perspectives," Energy & Environmental Science, vol. 9, no. 5, pp. 1552-1576, 2016.
[4] J. Benick, B. Hoex, M. Van de Sanden, W. Kessels, O. Schultz, and S. W. Glunz, "High efficiency n-type Si solar cells on Al 2 O 3-passivated boron emitters," Applied Physics Letters, vol. 92, no. 25, p. 253504, 2008.
[5] J. Fink, J. M. Hoey, and D. L. Schulz, "Fine line metallization of silicon solar cells via collimated aerosol beam direct write," in ASME 2012 International Mechanical Engineering Congress and Exposition, 2012, pp. 1675-1680: American Society of Mechanical Engineers.
[6] R. A. Sinton and A. Cuevas, "Contactless determination of current–voltage characteristics and minority‐carrier lifetimes in semiconductors from quasi‐steady‐state photoconductance data," Applied Physics Letters, vol. 69, no. 17, pp. 2510-2512, 1996.
[7] B. O’regan and M. Grfitzeli, "A low-cost, high-efficiency solar cell based on dye-sensitized," nature, vol. 353, no. 6346, pp. 737-740, 1991.
[8] C. Gümüş, C. Ulutaş, and Y. Ufuktepe, "Optical and structural properties of manganese sulfide thin films," Optical Materials, vol. 29, no. 9, pp. 1183-1187, 2007.
[9] C. Honsberg and S. Bowden, "PV Education [Online] Available www.pveducation.org," 2014.
[10] L. Dobrzański, M. Musztyfaga, A. Drygała, and P. Panek, "Investigation of the screen printed contacts of silicon solar cells using Transmission Line Model," Journal of Achievements in Materials and Manufacturing Engineering, vol. 41, no. 1-2, pp. 57-65, 2010.
[11] N. Mardesich, A. Pepe, S. Bunyan, B. Edwards, and C. Olson, "A low-cost photovoltaic cell process based on thick film techniques," in 14th Photovoltaic Specialists Conference, 1980, pp. 943-947.
[12] A. Bentzen, "Phosphorus diffusion and gettering in silicon solar cells Dissertation," University of Oslo, 2006.
[13] F. Huster and G. Schubert, "ECV doping profile measurements of aluminium alloyed back surface fields," in Proceedings of the 20th European Photovoltaic Solar Energy Conference, 2005, pp. 1462-1465: WIP Renewable Energies Barcelona, Spain.
[14] M. Tajima, M. Ikebe, Y. Ohshita, and A. Ogura, "Photoluminescence analysis of iron contamination effect in multicrystalline silicon wafers for solar cells," Journal of electronic materials, vol. 39, no. 6, pp. 747-750, 2010.
[15] M. Kasemann, J. Kokert, S. M. Torres, K. Ruhle, and L. M. Reindl, "Monitoring of indoor light conditions for photovoltaic energy harvesting," in Systems, Signals & Devices (SSD), 2014 11th International Multi-Conference on, 2014, pp. 1-5: IEEE.
[16] R. Hezel and K. Jaeger, "Low‐temperature surface passivation of silicon for solar cells," Journal of the Electrochemical Society, vol. 136, no. 2, pp. 518-523, 1989.
[17] J. Szlufcik et al., "Improvement in multicrystalline silicon solar cells after thermal treatment of PECVD silicon nitride AR coating," 1994.
[18] J.-W. Park, K.-J. Baeg, J. Ghim, S.-J. Kang, J.-H. Park, and D.-Y. Kim, "Effects of copper oxide/gold electrode as the source-drain electrodes in organic thin-film transistors," Electrochemical and Solid-State Letters, vol. 10, no. 11, pp. H340-H343, 2007.
[19] S. Anandan, X. Wen, and S. Yang, "Room temperature growth of CuO nanorod arrays on copper and their application as a cathode in dye-sensitized solar cells," Materials Chemistry and Physics, vol. 93, no. 1, pp. 35-40, 2005.
[20] O. Sulima, A. Bett, F. Dimroth, S. Keser, G. Stollwerck, and W. Wettling, "III/V-materials for tandem-concentrator solar cell application," COMPOUND SEMICONDUCTORS 1996, no. 155, pp. 429-432, 1997.
[21] M. Aleman, N. Bay, D. Rudolph, T. Rublack, and S. Glunz, "Front (side metallization beyond silver paste: silicide formation/alternative technologies," in 1rst Workshop on Metallization for Crystalline Silicon Solar Cells, Utrecht, The Netherlands, 2008.
[22] A. Goodrich et al., "A wafer-based monocrystalline silicon photovoltaics road map: Utilizing known technology improvement opportunities for further reductions in manufacturing costs," Solar Energy Materials and Solar Cells, vol. 114, pp. 110-135, 2013.
[23] C. Tool, A. Burgers, P. Manshanden, A. Weeber, and B. Van Straaten, "Influence of wafer thickness on the performance of multicrystalline Si solar cells: an experimental study," Progress in Photovoltaics: Research and Applications, vol. 10, no. 4, pp. 279-291, 2002.
[24] X. Wang, F. Hao, H. Chen, G. Wang, J. Li, and H. Lin, "Facile solvothermal synthesis of single-crystalline anatase nanorods for efficient dye-sensitized solar cells," Pure and Applied Chemistry, vol. 85, no. 2, pp. 417-425, 2012.
[25] B. Von Roedern and G. H. Bauer, "Why is the open-circuit voltage of crystalline Si solar cells so critically dependent on emitter-and base-doping?," National Renewable Energy Lab., Golden, CO (US)1999.
[26] B. Raabe, F. Huster, M. McCann, and P. Fath, "High aspect ratio screen printed fingers," in 20th European Photovoltaic Solar Energy Conference, 2005, pp. 931-933: WIP Renewable Energies Barcelona, Spain.
[27] C. Ballif, D. Huljić, G. Willeke, and A. Hessler-Wyser, "Silver thick-film contacts on highly doped n-type silicon emitters: structural and electronic properties of the interface," Applied physics letters, vol. 82, no. 12, pp. 1878-1880, 2003.
[28] G. Schubert, J. Horzel, R. Kopecek, F. Huster, and P. Fath, "Silver thick film contact formation on lowly doped phosphorous emitters," in at this conference, 2005.
[29] A. Blakers, "Shading losses of solar‐cell metal grids," Journal of Applied Physics, vol. 71, no. 10, pp. 5237-5241, 1992.
[30] K.-K. Hong, S.-B. Cho, J. S. You, J.-W. Jeong, S.-M. Bea, and J.-Y. Huh, "Mechanism for the formation of Ag crystallites in the Ag thick-film contacts of crystalline Si solar cells," Solar Energy Materials and Solar Cells, vol. 93, no. 6, pp. 898-904, 2009.
[31] M. Y. Levy and C. Honsberg, "Rapid and precise calculations of energy and particle flux for detailed-balance photovoltaic applications," Solid-state electronics, vol. 50, no. 7, pp. 1400-1405, 2006.
[32] F. A. Lindholm, J. G. Fossum, and E. L. Burgess, "Application of the superposition principle to solar-cell analysis," IEEE Transactions on Electron Devices, vol. 26, no. 3, pp. 165-171, 1979.
[33] M. A. Green, "Solar cell fill factors: General graph and empirical expressions," Solid-State Electronics, vol. 24, no. 8, pp. 788-789, 1981.
[34] Z. Li et al., "Microstructural comparison of silicon solar cells’ front-side Ag contact and the evolution of current conduction mechanisms," Journal of applied Physics, vol. 110, no. 7, p. 074304, 2011.
[35] J. Nelson, The physics of solar cells. World Scientific Publishing Co Inc, 2003.
[36] L. K. Cheng, L. Liang, and Z. Li, "Nano-Ag colloids assisted tunneling mechanism for current conduction in front contact of crystalline Si solar cells," in Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE, 2009, pp. 002344-002348: IEEE.
[37] 翁兆廷, "太陽能電池之光電量測儀器研製與應用," 2010.
[38] H. Berger, "Models for contacts to planar devices," Solid-State Electronics, vol. 15, no. 2, pp. 145-158, 1972.
[39] G. Schubert, F. Huster, and P. Fath, "Current transport mechanism in printed Ag thick film contacts to an n-type emitter of a crystalline silicon solar cell," in Proceedings of the 19th European Photovoltaic Solar Energy Conference, 2004, pp. 813-816.
[40] 施仁親, 陳震偉, and 吳登峻, "太陽光模擬器要求與新型 LED 太陽光模擬器簡介," 光連: 光電產業與技術情報, no. 92, pp. 56-62, 2011.
[41] W. Neu, A. Kress, W. Jooss, P. Fath, and E. Bucher, "Low-cost multicrystalline back-contact silicon solar cells with screen printed metallization," Solar energy materials and solar cells, vol. 74, no. 1, pp. 139-146, 2002.
[42] T. Trupke, E. Pink, R. Bardos, and M. Abbott, "Spatially resolved series resistance of silicon solar cells obtained from luminescence imaging," Applied Physics Letters, vol. 90, no. 9, p. 093506, 2007.
校內:2022-08-01公開