在工業4.0、電動車、再生能源等技術中，電力變頻器扮演極為重要的角色，現今變頻器的設計朝向高功率密度、高效率和快速響應的技術指標，而使用寬能隙半導體功率元件的變頻器正能達到這些目的。本文旨在實現疊接式氮化鎵高電子遷移率電晶體應用在變頻器中，首先說明驅動疊接式氮化鎵功率半導體元件的挑戰以及閘極驅動迴路的設計，並納入電力電子建構模塊(PEBB)概念實現模組化，以及減少變頻器體積至本研究中。提出以粒子群最佳化演算法藉由擬合雙脈衝實驗波形和模擬波形尋找本研究之相臂電路上寄生參數的作法。透過同步式降壓轉換器的模擬分析疊接式氮化鎵功率半導體元件的電路特性，並以相臂電路實現疊接式氮化鎵同步式降壓轉換器，最後再將模擬和實驗延伸到變頻器中並實現疊接式氮化鎵高切換頻率變頻器。

Power inverters play an important role in industry 4.0, electric vehicles, and renewable energy. The wide band-gap semiconductor power devices are considered as the solution to high power density, high efficiency, and fast response. Therefore, this research is devoted to designing an inverter using the cascode GaN HEMTs to operate at high switching frequency. The thesis starts with illustrating the challenges of driving the cascode GaN HEMT and the design guidelines of the gate drive circuit. The Particle Swarm Optimiza-tion (PSO) algorithm is performed for validating the parasitic parameter estimation. The concept of Power Electronics Building Blocks (PEBB) which could lead to modular inte-gration and size reduction is introduced as well. Circuit be-haviors of cascode GaN HEMT based synchronous buck converter are ana-lyzed by simulation. Following that, a PEBB cascode GaN HEMT syn-chronous buck converter is tested for analytical validation. In the end, a PEBB cascode GaN HEMT three phase inverter operating at different switching frequencies is investigated.

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