化學機械拋光(Chemical Mechanical Polishing，CMP)其研磨均勻度對晶圓元件之良率有重大之影響。本論文主要是從機械作用反應的觀點，來探討銅膜化學機械拋光移除率。所建立之模型探討CMP研磨過程，晶圓與研磨墊之接觸情形。其中包含研磨墊幾何尺寸及研磨墊材料機械性質以及晶圓研磨面與研磨墊間接觸之分佈應力進行分析。由於CMP操作參數十分複雜，例如平台和晶圓載具加在晶圓上的外在負載壓力、研磨墊材料性質與幾何形狀等等變數。因此，本文將針對CMP研磨中製程參數，研究晶圓研磨進行時晶圓與研磨墊之間的接觸形態在不同負載壓力下影響接觸壓力平坦化程度進行深入的探討，發展並評估其理論模型。

在wafer level部分，利用有限元素分析，本文將以Fu and Chandra研究理論為基礎判別模擬模型之可靠性，同時減少理論推導與幾何模型之複雜度，以更簡單的技巧發展與建立該系統之物理模型。在device level部分，形成淺碟型(Dishing)或應力腐蝕型(Stress erosion)的凹陷現象則與device與研磨墊接觸面之接觸應力值有關，利用Local dishing governing equation探討在不同device幾何結構下，分析接觸應力分佈情形。利用FEM模擬分析，與CAD結合建立一套完整CMP製程模擬工具，具體地以廠務實驗數據作為研究依據與製程最佳化之標準。建立完整的資料數據，提供CAD進行預測材料移除分析。

Chemical-Mechanical Polishing (CMP) process plays an important role in the state of the arts integrated circuit (IC) fabrication. The uniformity of global material removal rate (MRR) during CMP significantly impacts the overall device yield. In addition, the micro imperfections such as dishing and erosion between copper lines generated during CMP processing would certainly influence the device reliability. Since both problems directly correlated to the state of stress during CMP, it is important to perform detail stress analyses for CMP process, both in wafer and device levels. For the wafer level process, a new contact stress uniformity definition is proposed based on the width of the relatively flat zone. Based on the new definition, the effect of mechanical properties of pad materials, geometry parameters, and operating conditions on the contact stress uniformity are analyzed and discussed. In order to analyze the pressure distribution between wafer and pad, finite element (FE) models are used after building a wafer/pad contact stress model to analyze the effect of material (e.g., hyperelasticity), geometry (e.g., wafer bow and wafer grooves), and different loadings (e.g., muli-zone load) over the wafer to affect the contact stress uniformity during the CMP process. For the device level process, the fundamental model regarding dishing and stress erosion are analyzed. In addition, the local existed local dishing model is modified to incorporate the viscoelastic effect of pad materials. By the parameter study results and the newly defined performance index, it is possible to further perform detailed numerical analysis to combine with computer simulation and visulization for the development and integration of a CMP CAD simulation module. By the theses information, it shall be important for engineers to improve the performance such as uniformity of MRR for CMP processes.

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