本論文研究主題為使用離子源輔助射頻磁控濺鍍氧化鋅鋁（ZnO:Al, AZO）薄膜，探討基板溫度與離子源陽極電壓對薄膜特性之影響。
在基板溫度對AZO薄膜性質影響之研究中，固定薄膜厚度為200 nm，當射頻脈衝功率280 W、工作壓力1×10-3 torr及氬氣流量20 sccm時，發現在基板溫度600 ℃下，具有最低電阻率7.83×10-4 Ω-cm以及可見光之平均穿透率92.6 %。透過霍爾效應量測、光電子光譜儀、X光粉末繞射儀、X光低掠角繞射儀、掃描電子顯微鏡（SEM）、原子力顯微鏡（AFM）、紫外光/可見光光譜儀、反射光譜儀及X光光電子能譜儀（XPS）等儀器分析基板溫度對於薄膜的電學性質、晶體結構、顯微結構、光學性質以及鍵結組成之影響。
在離子源輔助鍍膜對AZO薄膜性質影響之研究中，調變離子源陽極電壓，探討在不同基板溫度下之離子源能量對薄膜性質的改變。延用基板加溫時的最佳參數，發現在基板溫度600 ℃下且離子源陽極電壓30V時，具有最低電阻率6.29×10-4 Ω-cm以及可見光之平均穿透率93.0 %。透過前述相同之儀器且加入穿透式電子顯微鏡（TEM）來分析薄膜之性質。
最後將AZO薄膜應用於有機太陽電池之透明陽極，使用CuPc與C60兩種小分子材料當作元件之主動層，製作元件之結構為（Glass/AZO/CuPc/ C60/BCP/Al），探討不同離子源能量輔助鍍膜的AZO透明陽極對元件特性之影響。

This thesis reports on the aluminum-doped zinc oxide（AZO） thin films deposited by ion beam assisted rf magnetron sputtering.
The first part of this thesis investigated the effects of substrate temperature on the AZO thin films. The films thickness （200 nm）, rf pulse power（280 W）, working pressure （1×10-3 torr）and argon flow rate（20 sccm）were fixed. The lowest electrical resistivity of 7.83×10-4 Ω-cm and average visible transmittance of 92.6 % were found when the films were deposited at 600 ℃. The electric, structure, surface morphology, optical properties and the chemical bonding of the sputtered AZO thin films were investigated by Hall effect measurement, photoelectron spectrometer, powder and glazing angle X-ray diffraction（XRD）, scanning electron microscope（SEM）, atomic force microscopy（AFM）, uv/vis spectrophotometer, filmetrics and x-ray photoelectron spectroscopy.
Next, we studied the ion source assist rf magnetron sputtering of the AZO films by tuning the ion source anode voltage. The lowest electrical resistivity of 6.29×10-4 Ω-cm and average visible transmittance of 93.0 % were found when the films were deposited at 600 ℃ and the ion source anode voltage was 30 V .
Finally, AZO thin films that were prepared by the ion beam assisted sputtering were used the transparent anode for organic solar cells. Two small molecular materials, CuPc and C60, were used as the active layer of solar cells following structure :（Glass / AZO / CuPc/C60/BCP/ Al）. The characteristics of these devices were also studied in detail.

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