本論文以成本較低廉且製程簡單之非真空電鍍方式製備二硒化銅銦(CuInSe2)太陽能電池之主吸收層，以三元共電鍍的方式並配合薄膜硒化處理來改善薄膜的品質、化學劑量比以及提升薄膜表面形貌和結晶大小來提升太陽能電池元件之效率達2.51%。
研究中顯示薄膜藉由第一階段250℃和第二階段450℃硒化熱處理能夠有效提升薄膜結晶大小和品質，但由於薄膜表面形成許多CIS大顆粒結晶降低薄膜表面的平坦度，會造成CdS鍍製時和CIS薄膜的批覆性變差，故我們透過介面活性劑十二烷基硫酸鈉(SDS)的添加隨著濃度上升能夠有效抑制大顆粒結晶的形成改善薄膜平坦度。但在硒化處理部分變得較容易使薄膜龜裂，而透過硒化處理時調整Se錠添加量能夠抑制薄膜龜裂的現象並且改善薄膜結晶性。後續配合在CIS和Mo介面處加入直流電鍍膜來改善在介面處披覆性較差的問題，能夠使CIS太陽能電池的轉換效率從最初的0.86%提升至2.51%。

CuInSe2 thin films were prepared on Mocoated glass substrates using pulse electrodeposition with an aqueous solution containing sodium dodecyl sulfate (SDS) as an additive. And thin films crystallinity were enhanced by selenization of two-step
electrodeposited CuInSe2 precursors. Scanning electron microscopy revealed that the cracks and roughness of CuInSe2 films decreased considerably after adding SDS into the electrolyte. The suppression of secondary phases was also observed using X-ray diffraction and Raman spectroscopy. As expected, based on these differences, the CuInSe2 solar cell with the Al/AZO/i-ZnO/CdS/CuInSe2/Mo/glass structure derived from precursor film deposited in an electrolyte containing SDS demonstrated greater efficiency (η = 2.51 %) than that of the cell derived from precursor film deposited in an electrolyte without SDS (η = 0.63 %).

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