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研究生： 羅德煒
Lwo, David
論文名稱： 基於寬能隙元件之馬達驅動器及其線上溫度監測方法
A Motor Drive Employing Wide-Bandgap Devices and Its Online Temperature Monitoring Technique
指導教授： 謝旻甫
Hsieh, Min-Fu
學位類別： 博士
Doctor
系所名稱： 電機資訊學院 - 電機工程學系
Department of Electrical Engineering
論文出版年： 2026
畢業學年度： 114
語文別： 英文
論文頁數： 130
中文關鍵詞： 馬達驅動 、功率元件溫度量測 、寬能隙功率元件 、變頻器
外文關鍵詞： motor drive, power device temperature measurement, wide-bandgap power device, inverter
ORCID： 0009000994617389
相關次數： 點閱：3  下載：0 
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    • 本文提出一種線上量測驅動器功率元件跨壓並估算晶片溫度的方法，包含跨壓量測電路和寬能隙元件驅動器的設計方式。此方法適用於具有微控制器和電流感測器之馬達驅動器，且待測元件無需特殊封裝或儀器。常見溫度感測器，如熱電耦、紅外線熱像儀等，受限於封裝與散熱結構，且受周邊溫度影響，難以量測單一晶片溫度；而與暫態或開關過程相關之溫度敏感電性參數在和驅動電路搭配使用時容易受限於量測時機與微處理器取樣能力。故本研究設計一跨壓量測電路可配合驅動開關量測元件跨壓，以驅動器回授之馬達線電流計算估算損耗功率，再依儲存之記錄值或元件資料推算其導通電阻變化量，藉此估測晶片溫度。為驗證其可行性，設計寬能隙元件驅動器電路，並模擬驅動器之開關損失。縮短死區時間和加裝續流二極體損失有助於減少GaN E-HEMT續流損失，減少元件升溫以維持高效率。SiC MOSFET和GaN E-HEMT之控溫多脈衝測試的實驗結果確認跨壓量測電路工作速度可配合寬能隙元件開關。其導通電阻變化率對測試溫度有良好的重複性與可辨識性。將半橋電路組成馬達驅動器，於各負載測試下記錄之馬達電流和元件溫度顯示在變動驅動電流下仍能穩定測算導通電阻，且與待測物溫度相關。碳化矽元件馬達驅動器連續驅動測試於相電流約10 A rms實測至溫度90度。此線上溫度監測方法可相容於驅動電路、一般微控制器及元件封裝，並能透過導通電阻變化率推估晶片溫度，實現馬達驅動器線上監測功率元件溫度。

    This study proposes an online method for measuring the voltage drop across power devices and estimating their die temperature by using a cross-voltage measurement circuit (CVMC) integrated with a wide-bandgap (WBG) device motor drive. The approach is compatible with motor-drive systems equipped with a microcontroller unit (MCU) and current sensing, and it requires no special device packaging or additional instrumentation. Conventional temperature-sensing methods are limited by package thermal paths and ambient interference, making accurate single-chip temperature measurement difficult during motor operation. The proposed CVMC captures the on-state voltage of the device under test (DUT) without disturbing switching commands, while the device power loss is estimated using motor-current feedback. The on-resistance variation is then inferred from stored calibration data or datasheet to estimate the die temperature. Half-bridge test circuits were developed to validate the feasibility of the method, confirming that the CVMC operates reliably during fast switching transitions of SiC MOSFETs and GaN E-HEMTs. The measured on-resistance exhibited strong repeatability and clear temperature dependence. When integrated into an inverter, the method demonstrated stable resistance estimation under varying load conditions, with the SiC MOSFET reaching approximately 90 °C at a phase current of 10 Arms during continuous operation. These results show that the proposed method is fully compatible with standard drive circuits, MCUs, and conventional device packaging, enabling practical online temperature monitoring in motor-drive power devices.

    摘要　i Abstract　ii Acknowledgements　iii Contents　iv List of Tables　vii List of Figures　viii List of Nomenclature　xii List of Abbreviations　xvii List of Publications　xix Chapter 1　Introduction　1 1.1　Background　1 1.2　Literature Review　2 1.3　Motivation and Objective　4 1.4　Dissertation Overview　5 Chapter 2　Fundamentals of PMSMs and Drive Circuit　8 2.1　Drive Method and Control Theory of PMSM　8 2.1.1　Mathematical Model of the Three-Phase Motor　8 2.1.2　Park and Clarke Transforms and the D–Q Axis　11 2.1.3　PMSM Mathematical Model in Synchronously Rotating Frame　14 2.1.4　Comparison of PMSMs Specifications Used in This Article　18 2.1.5　Space Vector Pulse Width Modulation　22 2.1.6　Field-Oriented Control Method　28 2.2　Factors Affecting Motor Drive in Practical Applications　34 2.2.1　Nonlinear Problems　35 2.2.2　Recommendations for Finding Suitable Drive Parameters　35 2.3　RDS,ON as TSEP of WBG Power Devices　38 2.3.1　SiC MOSFETs　38 2.3.2　GaN E-HEMTs　39 2.3.3　Temperature Estimation Error Factors　40 Chapter 3　Design Method of MPT Circuit of WBG Transistors　42 3.1　Introduction to Wide-Bandgap Transistors　42 3.2　Introduction to the Pulse Testing Method　46 3.2.1　Theory and Circuit of Pulse Testing　46 3.2.2　Measurement and Interpretation of Test Waveform　47 3.3　GaN E-HEMT Pulse Testing Circuit Design Method　50 3.3.1　Simulation with Assumed Parasitic Parameters　50 3.3.2　Circuit Design and Component Selection　55 3.3.3　Effect of the Freewheeling Diode to GaN E-HEMT Drive　56 Chapter 4　CVMC for Online Temperature Monitoring　62 4.1　Proposed Cross-Voltage Measurement Circuit　62 4.1.1　Construction and Operating Principle of CVMC　62 4.1.2　Principle of Measurement　66 4.2　Temperature Estimation Method Using the RRATIO　71 4.3　Potential Errors and Solutions　73 Chapter 5　Experiment and Analysis　74 5.1　Temperature-Controlled Multi-Pulse Testing　74 5.1.1　MPT of SiC Power Devices　78 5.1.2　MPT of GaN Power Devices　81 5.1.3　Experimental Results　84 5.2　Motor Load Test with SiC MOSFET Circuit　87 5.3　Reaction Wheel Driving Experiment with GaN E-HEMT Circuit　95 5.3.1　Comparison of Driving Results with Freewheeling Diodes　96 5.3.2　Experimental Results　96 Chapter 6　Conclusion and Future Work　99 6.1　Conclusion　99 6.2　Future Work　100 References　102

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