鈮酸鈉鉀((NayK1-y)NbO3)是一種具有取代含鉛壓電陶瓷吸引力的材料；因為它的高機電耦合係數和高轉相溫度，所以被廣泛地研究。本文中，以常用的氧化物混合法製備掺雜鈦酸鍶(SrTiO3)和鈦酸鈣(CaTiO3)之非含鉛鈮酸鈉鉀陶瓷。以X光繞射、掃瞄式電子顯微鏡、和原子力顯微鏡加以分析，並研究介電、壓電與鐵電特性。根據結果顯示，鈦酸鍶和鈦酸鈣能有效防止陶瓷體水解與改善其電特性。最後，成功研製出以此非含鉛材料為主體之表面聲波元件。此外，我們也有系統地研究掺雜量0.5莫耳濃度的鈦酸鍶和鈦酸鈣之鈮酸鈉鉀在不同燒結溫度下之特性；結果顯示，適當的燒結溫度可以有效改善陶瓷的密度和電特性。
拉福波元件因為其高靈敏度，所以非常適用於液體和氣體的感測。我們嘗試在不同的沉積條件下，將氧化鋅薄膜成長在鉭酸鋰(36 YX LiTaO3)基板上；根據氧氣氦氣比、射頻能量、沉積壓力和退火溫度分析其特性，其結晶構造、應力、表面粗糙度等特性也一併研究。更進一步地，研究以氧化鋅/石英(4245´ ST-cut quartz)、氧化鋅/鉭酸鋰、氧化鋅/鈮酸鋰(64 YX-LiNbO3)為構造的拉福波元件之相速度、頻率溫度係數(TCF)、機電耦合係數(k2)和靈敏度。鎂掺雜對氧化鋅薄膜結晶構造的影響和對拉福波感測器的特性也被加以探討；適當的鎂掺雜能形成粗糙的表面以提升感測器靈敏度。
最後研究在掺雜鈦酸鍶之鈮酸鈉鉀陶瓷基板上成長氧化鋅薄膜。藉由射頻磁控濺鍍法，成功地成長具有c軸(002)優選取向的氧化薄膜於鈮酸鈉鉀陶瓷基板上。再研究成長上的氧化鋅薄對於鈮酸鈉鉀陶瓷之表面聲波特性，如：相速度、頻率溫度係數、機電耦合係數有何影響。

Sodium potassium niobate ((NayK1-y)NbO3, NKN) ceramic is an attractive material replacing Pb-based piezoelectric ceramics. It has been thoroughly investigated due to its high k2 and high phase transition temperature. Lead-free (Na0.5K0.5)NbO3 ceramics doped with SrTiO3 (ST) and CaTiO3 (CT) (0-3 mol%) have been prepared by the conventional mixed oxide method in this research. The samples are characterized by X-ray diffraction analysis, scanning electron microscopy, and atomic force microscopy measurements. The dielectric, piezoelectric and ferroelectric properties are also investigated. Our results show that the addition of SrTiO3 and CaTiO3 are very effective in preventing the deliquescence and in improving the electric properties. Finally, SAW devices based on lead-free ceramics have been successfully fabricated. Besides, we have focused on the preparation of 0.5 mol% ST and CT doped NKN ceramics at different sintering temperatures, and systematically investigated their properties. The results present that the optimum sintering temperature is effective in improving the density and electric properties.
Love-mode devices are very promising for liquid and gas media sensing applications because of high sensitivity. An experimental study of the structures based on ZnO guiding layer and 36 LiTaO3 substrate with different sputtering conditions to deposit ZnO films is presented. The deposited films were characterized as a function of argon-oxygen gas flow ratio, RF power, deposition pressure, and annealing temperature. Crystalline structures, stress, and surface roughness characteristics of the films were investigated. Further, the phase velocity, temperature coefficient of frequency, electromechanical coupling coefficient and sensitivity of Love-mode devices based on ZnO/IDT/36 YX-LiTaO3, ZnO/IDT/4245´ ST-cut quartz and ZnO/IDT/64 YX-LiNbO3 are presented. The influence of Mg dopants on the crystalline structures of ZnO thin films and the properties of Love wave sensors has also been studied. The appropriate addition of Mg dopant will produce a rough surface to raise the sensitivity.
A study of the structure based on the ZnO layers and NKN-ST ceramic substrates with different sputtering conditions to deposit ZnO films is presented. Poly-crystal ZnO films with c-axis (002) orientation have been successfully grown on the NKN-ST ceramic substrates by RF magnetron sputtering technique. Based on previous SAW fabrication of NKN-ST ceramics, the effects of the ZnO films on the SAW device properties with a ZnO/IDT/NKN-ST structure, such as phase velocity, k2 and TCF, were investigated.

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