摘 要
　　化學機械研磨（CMP）中影響研磨效果的參數相當多，而研磨墊的孔洞結構在化學機械研磨中扮演甚麼角色，由於問題十分複雜，相關論文亦只探討研磨墊變形對研磨效果的研究，至今很少人涉獵孔洞結構的研究。事實上研磨墊孔洞結構在化學機械研磨中對晶圓磨除率以及均勻度具有相當的重要性，因此本研究針對研磨墊孔洞結構進行流場理論上的模擬，期望能對晶圓化學機械研磨磨除率與均勻度之提升有幫助。

　　在研磨墊部份，吾人先將描述孔洞性質的參數計算出來，全部帶到最重要的參數—滲透量內。滲透量除了是材料滲透性的指標，同時也包含了各個孔洞參數的效果在內，由滲透量可看出孔徑大小的變化及分佈、碎形維度與孔隙度等影響滲透量最重要的參數。接下來將土壤力學中雨水滲透到土壤之概念，來推導研磨墊孔洞結構Laplace’s Equation，用此方程式描述研磨墊內部之流場。再利用數值方法計算出研磨墊內部之壓力分佈，與晶圓水膜之液壓分佈做結合得到新的液壓分佈。利用微接觸力學之彈塑性變形理論可導出研磨過程中之接觸壓大小，再配合研磨墊彈性變形理論力平衡，力矩平衡便可得到平衡狀態下之最小水膜厚度，攻擊角與旋轉角。最後再代入砥粒刮蝕機械移除率理論，求得帶有孔洞效應之移除率。

　　本論文最終獲得下列結論：考慮研磨墊孔洞結構之後，在滲透量的影響之下，會造成液壓下降，接觸壓增加，進而造成移除率提升。較未考慮研磨墊孔洞結構之模型，移除率有所提升，而非均勻度之提昇則較少。

Abstract
　There are many parameters that effect the CMP in the process. The rule that porous structure of pad plays in CMP is very complicated and there are not many researches mentioned about it. Actually the porous structure of pad is significant for removing rate and uniformity of wafer after CMP. The theoretic simulation for flow field due to porous structure is established in this study. The method can be helpful for removing rate and uniformity of CMP. A valid method of evaluating the effect of porous structure to CMP is presented, too.

　The established model is considered for the effect of porous structure to both of the flow field and the contact mechanism among wafer, slurry, and pad. For the analysis of flow field, the Reynolds equation considered for effects of the porous structure is established. Numerical computing for theoretic analysis can solve the hydrodynamic pressure, liquid film thickness, and fluid velocity filed. For solid contact, the model for removing rate, which calculates deformation of pad roughness and substrate and includes abrasive and adhesive behaviors of wear, is established according to elastroplastic deformation theory.

　Using the Laplace Equation of Soil Mechanics to solve the hydro pressure in the field of pad. Computing the hydro pressure and hydrodynamic load by numerical analysis for the modified Reynolds equation. In the otherhand,
evaluating the true contact pressure, contact area, and deformation between pad and wafer by analysis for the interface contact phenomena.

There are several conclusions in this study. The porous structure increases removing rate more than uniformity. The smaller hardness of passivation, the larger removing rate and uniformity. According to the elastroplastic deformation theory of micro contact mechanics, we derive the contact pressure under polishing and solve the minimum fluid film thickness, attack angle, and rotating angle in equilibrium of force and moment.

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