由於光電產業迅速發展，帶領了電子平面顯示器廣泛的應用在每一個人的生活中，因此驅動顯示器的開關元件「薄膜電晶體」（ＴＦＴ）就顯得格外重要。薄膜電晶體的好壞將會大幅的影響顯示器的性能，因此如何改善薄膜電晶體的品質、以及降低生產成本，一直都是研究與生產上努力的目標。
本論文採用低成本的溶膠凝膠法來製備氧化銦鋅鋯薄膜電晶體，第一部分:探討調變不同鋯摻雜於氧化銦鋅的含量，並探討其特性，第二部份：針對溶膠凝膠法製作電晶體的燒結溫度做詳細探討，第三部分:採用UVO作為對薄膜的前置處理再退火觀察其特性，經由一系列結果，製備出飽和載子遷移率為 2.08 cm2/Vs，開關比Ion/off ratio約106，最佳次臨界擺幅S.S=0.66V/decade 之電晶體。藉由XPS、XRD、AFM、SEM、以及UV-Visible spectrophotometer等儀器分析，將元件I-V特性加以討論。

Because of the rapid development of the optoelectronics industry, nowadays applications of the electronic flat panel display are wide. Therefore, the switching elements of the driving display "thin film transistor" (TFT) play an important role, and TFTs will dramatically affect the efficiency of the display. So, We have making effort on both researched and production process to improve the quality of TFT and reduce the production costs, and accomplish that is the most important goal.
In this study, we use solution-processed method to fabricated ZrInZnO thin-film transistors. To investigate the films and their further effects on devices characteristic, a serious of measurements like XPS, XRD, AFM, SEM and UV-Visible were carried out.
Part 1: Investigation of the ZrInZnO as an active layer with various mole ratio of zirconium.
Part 2: We study about TFTs through various annealing temperature via sol-gel method.
Part 3: We adapt UVO to pre-processing and then annealing to observe TFTs character.
From the experimental result, the devices characteristics are saturation mobility 2.08cm2/v s, I on/off ratio~106 and sub-swing 0.66V/dec.

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