成功大學博碩士論文系統

簡易檢索 / 詳目顯示

回結果列表

研究生：	王嘉綸 Wang, Jia-Lun
論文名稱：	可切換式差動電感及其在超寬頻射頻頻率合成器中四相位振盪器設計之應用 Switchable Differential Inductors and Their Application to the Quadrature Oscillator Design for Ultra-Wideband (UWB) RF Synthesizers
指導教授：	黃尊禧 Huang, Tzuen-Hsi
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電機工程學系 Department of Electrical Engineering
論文出版年：	2006
畢業學年度：	94
語文別：	英文
論文頁數：	156
中文關鍵詞：	多標準、切換式電容陣列、頻率合成器、可切換式晶片電感、四相位壓控振盪器、可調頻率範圍較寬
外文關鍵詞：	quadrature VCO, switchable capacitor array, multi-band, on-chip switchable inductor, Synthesizer, wide tuning range
相關次數：	點閱：131 下載：8
分享至:	分享至facebook 分享至twitter

查詢本校圖書館目錄查詢臺灣博碩士論文知識加值系統勘誤回報

本論文主要涵蓋兩個主題。第一個主題是有關於本文所提出之新穎的可切換式晶片電感(on-chip switchable inductor)特性描述與研製。其模擬、量測以及等效電路模型結果也將被分析與討論。第二個主題主要是利用本文所提出之切換式電感去設計一可切換頻率的四相位壓控振盪器並將其應用在超寬頻多頻帶OFDM的頻率合成器中(UWB MB-OFDM Synthesizer)。
　　本文中晶片電感的一般特性將被探討且我們提出了一種新式的可切換差動電感相較於傳統可切換式電感面積可節省約50 %以上。最後電磁模擬軟體(ADS-Momentum)之模擬方法與過程將逐一介紹。
而所提出之切換式電感製作於台積電0.18 μm 1P6M標準RF CMOS製程。為了使模擬以及量測結果能夠一致，經校正過的製程參數值將被使用在電磁模擬軟體中。另外藉由不同的切換式電感架構以及並聯不同MOS開關大小對切換式電感特性的影響也將被討論與分析。為了有效的描述此切換式電感在高頻下的行為，一個簡單的電感等效電路模型也被提出。此切換式電感等效電路模型之準確性可達10 GHz。最後模擬、量測以及等效電路模型結果將被比較與說明。
　　利用本文所提出的切換式電感架構，我們實現了其在多頻帶及可調頻率範圍較寬壓控振盪器的應用。根據新的頻率規畫，我們提出了一個新的射頻頻率合成器架構應用在超寬頻多頻帶OFDM的系統中(UWB MB-OFDM System)。因此一個利用可切換式電感將四相位壓控振盪器操作在頻率6,072 / 6,600 MHz被設計來滿足上述頻率合成器的需求。模擬結果顯示此四相位壓控振盪器可操作在6,072 MHz或 6,600 MHz。在1.8 V電源供應下四相位壓控振盪器核心電路消耗8.733 mA且功率損耗為15.72 mW。當MOS開關開路時，模擬的相位雜訊距中心頻率 (6.136 GHz) 1 MHz時為-115 dBc/Hz。當MOS開關短路時，模擬的相位雜訊距中心頻率 (6.622 GHz) 1 MHz時為-114 dBc/Hz。透過MOS變容器以及切換式電容陣列當MOS開關開路及短路時其可調頻率範圍分別為5,858 MHz到6,437 MHz及6,436 MHz 到7,018 MHz。最後此四相位振盪器整合本文所提出之可切換式電感製作於台積電0.18 μm 1P6M標準RF CMOS製程。
本論文的貢獻如下：第一、我們提出了一新穎可切換式差動電感架構，相較於傳統切換式電感架構在晶圓面積的消耗得以縮小約50 %，因此成本得以降低。第二、本文所提出的切換式電感架構可被整合至壓控振盪器電路中以提供多標準/多頻帶和可調頻率範圍較寬的應用。第三、我們提出一新的頻率規畫和超寬頻多頻帶OFDM的頻率合成器電路架構。此頻率合成器的架構可以提供完整模式-1和模式-2的操作且實現低功率損耗的目標。

This thesis is mainly divided into two topics. The first topic deals with the characterization of a newly proposed on-chip switchable inductor on silicon substrate. The simulation, measurement and modeling results of proposed switchable inductor are described. The second topic deals with the design of a quadrature VCO using our proposed switchable inductor for the UWB MB-OFDM synthesizer application.
In this thesis, the general characteristics of on-chip inductors are discussed. We proposed a newly switchable differential inductor that can be achieved over 50 % area shrinkage as compared with the traditional switchable inductor. Finally the simulation method and procedures in ADS-Momentum will be introduced.
The proposed switchable inductors are fabricated by TSMC 0.18 μm 1P6M standard RF CMOS technology. In order to fit results between simulation and measurement the well calibrated process parameters will be used in electromagnetic simulation tool. The characteristics of proposed switchable inductors with different geometry and switch MOS size are also observed. A simple inductor lumped-circuit model is also proposed in order to describe the high-frequency behavior of inductor. Such circuit model is with a relatively reasonable accuracy up to 10 GHz. Finally the simulation, measurement, and modeling results are compared.
The VCO for multi-band or wide tuning range applications will be demonstrated by using our proposed switchable inductor. Based on a new frequency plan, we have proposed a new RF synthesizer architecture for UWB MB-OFDM system. A quadrature VCO that can operate at 6,072 / 6,600 MHz by using the switchable inductor is designed for such synthesizer. The simulation results of QVCO shows that the oscillation frequency can operate at 6,072 MHz or 6,600 MHz. At 1.8 V power supply voltage the QVCO core draws 8.733 mA and a total power consumption of QVCO core circuit is 15.72 mW. The simulated phase noise at 1 MHz offset from the center frequency (6.136 GHz) is -115 dBc/Hz when switch MOS turns OFF. The simulated phase noise at 1 MHz offset from the center frequency (6.622 GHz) is -114 dBc/Hz when switch MOS turns ON. The tuning frequency range is from 5,858 MHz to 6,437 MHz and 6,436 MHz to 7,018 MHz through MOS varactor and switchable capacitor array when switch MOS turns OFF and ON respectively. Finally, the QVCO with integrating our proposed switchable inductor is also fabricated by TSMC 0.18 μm 1P6M standard CMOS technology
The original contributions of thesis are：The first, we propose a new switchable inductor architecture that can shrink the area about 50 % thus cost down. The second, the proposed inductors can be integrated into a VCO circuit to provide the multi-band / multi-standard or the wide tuning range application. The third, we propose a new frequency plan as well as the circuit architecture for an UWB MB-OFDM synthesizer. Such synthesizer can provide the complete mode-1 / mode-2 operation and achieve the target of low power consumption.

Chinese Abstract......................................................................I
English Abstract............................................................III
Acknowledgement...............................................................V
List of Tables...............................................................IX
List of Figures...............................................................X

Chapter 1  Introduction..................................................................1
1 Background................................................................1
2 Motivation................................................................3
3 Thesis Organization.......................................................5

Chapter 2  On-Chip Inductors and Switchable Inductors.........................7
1     Introduction..........................................................7
2     On-Chip Inductor......................................................7
2.1   Inductor Structures...................................................7
2.2   Inductance...........................................................11
2.2.1 Self Inductance......................................................11
2.2.2 Mutual Inductance....................................................11
2.2.3 Total Inductance.....................................................13
2.3   The Applications of Inductors in RFIC................................15
2.3.1 Low-Noise Amplifier with Inductive Degeneration (LNA)................15
2.3.2 Voltage-Controlled Oscillator with Switchable L-C Resonators.........16
2.3.3 LC Tank Used in RFIC.................................................17
3     Loss Mechanisms of Inductors in CMOS Process.........................18
3.1   Conductor Loss.......................................................18
3.1.1 The Sheet Resistance and Skin Effect.................................19
3.1.2 Eddy Current Resistance..............................................20
3.2   Substrate Loss.......................................................22
3.2.1 Magnetic Induced Parasitic Effects...................................22
3.2.2 Electrical Induced Parasitic Effects.................................23
3.3   Quality Factor Definition............................................24
4     Traditional Switchable Inductors.....................................26
5     A Newly Proposed Structure...........................................27
6     Inductor Parameters and Simulation with ADS-Momentum Simulator.......30

Chapter 3  Simulation, Measurement, and Modeling.............................33
1     Introduction.........................................................33
2     Simulation...........................................................34
2.1   Calibrated Process Parameters and Their Effects on Inductor
        Performance..........................................................35
2.1.1 The Influence of Substrate Conductivity on The Inductor..............36
2.1.2 The Influence of Metal Conductivity on The Inductor..................38
2.1.3 The Influence of Metal Thickness on The Inductor.....................39
2.1.4 The Influence of Oxide Thickness on The Inductor.....................40
2.2   Simulation Procedure.................................................42
2.3   Simulation Results...................................................46
2.3.1 Switchable Inductor for Wide Tuning Range Applications...............47
2.3.2 Switchable Inductor for Multi-Band Applications......................50
3     Measurement..........................................................53
3.1   S-parameters and Measurement Instruments for on Wafer Testing........53
3.2   De-embedded Procedure and Measurement Results of Switchable Inductors59
2.1.1 Measurement Results of the Switchable Inductor for Wide Tuning Range.60
2.1.2 Measurement Results of the Switchable Inductor for Multi-Band........62
2.1.3 The Effects of Different Inner-turn Size.............................64
2.1.4 The Effects of Different Number of MOS Transistor....................66
2.1.5 Quality Factor Degradation...........................................68
2.1.6 The Comparison between Measurement and Simulation Results............69
4     Inductor Modeling....................................................70
5     A Proposed Model of Switchable Differential Inductor.................73
6     The Comparison among Simulation, Measurement and Modeling Results....74

Chapter 4  Applications for Oscillator.......................................81
1     Introduction.........................................................81
2     Fundamentals of The VCO..............................................82
2.1   Oscillation Start-up Condition.......................................84
2.2   Tuning Range.........................................................86
2.3   Phase Noise..........................................................87
2.4   Power Consumption....................................................90
3     The Ways to Generate Quadrature Signal...............................91
3.1 Frequency Division.....................................................91
3.2 RC-CR Network..........................................................92
3.3 Ring Oscillator........................................................95
3.4 Quadrature Oscillator by LC Implementations............................95
4     Oscillator Applications by Using Switchable Inductor................104
4.1   Multi-Band / Multi-Standard Applications............................104
4.2   Wide Tuning Range Applications......................................107
4.3   A New Ultra-Wideband RF Synthesizer Architecture....................108
4.4   A 6,072 / 6,600 MHz Quadrature Oscillator Design....................117
4.4.1 QVCO Structure Selection............................................117
4.4.2 The Design Flow of Proposed QVCO....................................120
4.4.3 Simulation Results..................................................128

Chapter 5  Conclusions and Future Work......................................145
1     Conclusions.........................................................145
2     Future Work.........................................................148

References..................................................................149
                                    

[1] The International Technology Roadmap for Semiconductors: 2005.
[2] A. J. Burghartz,"Novel substrate contacts structure for high-Q silicon
integrated spiral inductors,"IEEE International Electron Devices Meeting., 1997.
[3] P. Alan,"On-chip Planar Inductor Spiral Inductor Induced Substrate Effects on Radio Frequency Integrated Circuits in CMOS Technology,"Hong Kong University, 1998.
[4] H. Kim,"Spiral Inductor on Si p/p+ Substrates with Resonant Frequency of 20 GHz,"IEEE Electron Device Letters., vol. 22, June 2001.
[5] Y. K. Koutsoyannopoulos and Y. Papananos, "Systematic analysis and modeling of integrated inductors and transformers in RF IC design,"IEEE Trans. Circuits Syst. II, Analog Digit. Signal Process., vol. 47, no. 8, pp. 699-713, Aug. 2000.
[6] J. R. Long and M. A. Copeland,"The modeling, characterization and design of monolithic inductors for silicon IC's,"IEEE J. Solid-State Circuits., vol. 32, no. 3, pp. 357-369, Mar. 1997.
[7] C. P. Yue and S. S. Wong,"Physical modeling of spiral inductors on silicon,"IEEE Trans. Electron Devices., vol. 47, no. 3, pp. 560-568, Mar. 2000.
[8] J. R. Long,"Monolithic transformers for silicon RF IC design,"IEEE J. Solid-State Circuits., vol. 35, no. 9, pp. 1368-1382, Sep. 2000.
[9] A. M. Niknejad and R. G. Meyer,"Analysis of eddy-current losses over conductive substrates with applications to monolithic inductors and transformers,"IEEE Trans. Microw. Theory Tech., vol. 49, no. 1, pp.166-176, Jan. 2001.
[10] S. P. Yue and S. S. Wong,"Physical modeling of spiral inductors on silicon," IEEE Trans. Electron Devices., vol. 47, no. 3, pp. 560-568, Mar.2000.
[11] Silicon Laboratories : http://www.silabs.com.

[12] S.-M. Yim, and K.O. Kenneth,"Demonstration of a switched resonator concept in a dual-band monolithic CMOS LC-tuned VCO,"Proceedings of the IEEE 2001 Custom Integrated Circuit Conference., pp. 205-208, May 2001.
[13] A. Kral, F. Behbahani, and A.A. Abidi,"RF-CMOS oscillators with switched tuning,"Proceedings of the IEEE 1998 Custom Integrated Circuits Conference., pp. 555-558, May 1998.
[14] A. Fard, T. Johnson, M. Linder, and D. Aberg,"A comparative study of CMOS LC VCO topologies for wide-band multi-standard transceivers,"47th IEEE International Midwest Symposium on Circuit and System., vol. 31, pp. III-17~20, 2004.
[15] Z. Li, and K.O. Kenneth,"1-V low phase noise multi-band CMOS voltage controlled oscillator with switched inductors and capacitors,"IEEE 2004 Radio Frequency Integrated Circuits Symposium., pp. 467-470, 2004.
[16] Jri Lee,"A 3-to-8-GHz fast-hopping frequency synthesizer in 0.18-/spl mu/m CMOS technology,"IEEE J. Solid-State Circuits., Vol. 41, Issue 3, pp.566 - 573, March 2006.
[17] A. Ismail, A.A. Abidi,"A 3.1- to 8.2-GHz Zero-IF Receiver and Direct Frequency Synthesizer in 0.18-um SiGe BiCMOS for Mode-2 MB-OFDM UWB Communication,"IEEE J. Solid-State Circuits., Vol.40, Issue 12, pp. 2573 - 2582, Dec. 2005.
[18] C. Mishra, et. al.,"Frequency Planning and Synthesizer Architectures for Multiband OFDM UWB Radios,"IEEE Trans. on Microwave Theory and Techniques., vol. 53, issue 12, pp.3744-3756, 2005.
[19] First report and order, revision of part 15 of the Commission's rules regarding ultra-wideband transmission systems Washington, DC: FCC, ET Docket 98-153, Feb. 14, 2002.
[20] A. Batra, et al., Multi-band OFDM physical layer proposal for IEEE 802.15 Task Group 3a Piscataway, NJ: IEEE, IEEE P802.15-03/268r3-TG3a, Mar. 2004.
[21] http://eesof.tm.agilent.com/products/e8921a-a.html.
[22] L. E. Larson,"Integrated circuit technology options for RFICs present status and future and future dirctions,"IEEE JSSC-33., pp. 387, 1998.
[23] J.N. Burghartz, D.C. Edelstein, M. Soyuer, H.A. Ainspan and K.A. Jenkins,"RF circuit design aspects of spiral inductors on silicon,"IEEE Journal of Solid-State Circuits., vol. 33, no.12, pp. 2028-2034, December 1998.
[24] P. Pieter, K. Vaesen, S. Brebels, S. Mahmoud, W. Raedt, E. Beyne, and R. Mertens,"Accurate modeling of high-Q spiral inductors in thin-film multilayer technology for wireless telecommunication applications,"IEEE Trans. Microwave Theory Tech., vol.49, pp.589-599, April 2001.
[25] F. W. Grover Inductance Calculations, New York, NY: Van Nostrand 1962.
[26] P.L Alan Ling, "On-chip planar spiral inductor induced substrate effects on radio frequency integrated circuits in CMOS technology," The Hong Kong University of Science &Technology January 1998; Ph. D. Work.
[27] H. Greenhouse,"Design of planar Rectangular Microelectronic Inductors,"IEEE Transactions PHP., Vol. 10, June 1974.
[28] W.B. Kuhn, and N.M. Ibrahim,"Analysis of current crowding effects in multiturn spiral inductors,"IEEE Trans. Microw. Theory Tech., vol. 49, Issue 1, pp. 31-38, Jan. 2001.
[29] B.-L. Ooi, D.-X. Xu,"Modified inductance calculation with current redistribution in spiral inductors,"IEE Proceedings-Microwaves, Antennas and Propagation., Vol. 150, Issue 6, pp. 445 - 450, Dec. 2003.
[30] V. Govind, S. Dalmia, and M. Swaminathan,"Design of integrated low noise amplifiers (LNA) using embedded passives in organic substrates,"IEEE Transactions on Advanced Packaging., vol 27, Issue 1, pp. 79-89, Feb. 2004.
[31] Zhenbiao Li, K.O,"A 900-MHz 1.5-V CMOS voltage-controlled oscillator using switched resonators with a wide tuning range,"IEEE Microwave and Wireless Components Letters., vol. 13, Issue 4, pp.137-139, April 2003.
[32] T. Manku, G Beck, and E.J. Shin,"A low-voltage design technique for RF integrated circuits,"IEEE Transactions on Circuits and Systems., vol 45 , Issue 10 , pp. 1408 - 1413 ,Oct. 1998.
[33] W. B. Kuhn, and N. M. Ibrahim,"Analysis of Current Crowding Effects in Multiturn Spiral Inductors,"IEEE Trans. Microwave Theory Tech., Vol. 49, pp.31-38, January 2001.
[34] K.B Ashby, I.A. Koullias, W.C. Finley, J.J. Bastek and S.Molian,"High Q inductors for wireless applications in a complementary silicon bipolar process,"IEEE Journal of Solid-State Circuit., vol. 31, pp.4-9, January 1996.
[35] Z. Li, and K.O. Kenneth,"A Low-Phase-Noise and Low-Power Multiband CMOS Voltage-Controlled Oscillator,"IEEE Journal of Solid-State Circuits., vol. 40, no.6, pp.1296-1302, June 2005.
[36] J. Steinkamp, F. Henkel, and P. Waldow,"Multi-mode wide-band 130 nm CMOS WLAN and GSM/UMTS,"IEEE International Workshop on Integrated Circuits for Wideband Communication and Wireless Sensor Networks., no.2, pp. 105-108, December 2005.
[37] http://eesof.tm.agilent.com/products/e8921a-a.html.
[38] Jong-Min Lee, Tae-Woo Lee, Sung Ho Park, Byoung-Gue Min, Moon Pyung Park, Kyung-Ho Lee and In-Hoon Choi,"Comparison of frequency responses of spiral inductors with different figures,"IOP Journal of Semicond. Sci. Technol., vol. 16, no. 2, pp. 66-71, Feb. 2001.
[39] J. Chang, A. Abidi, and M. Gaitan,"Large suspended inductors on silicon and their use in a 2μm CMOS RF amplifier,"IEEE Electron. Device Lett., vol. 14, pp. 246-248, 1993.
[40] G.W. Dahlman and E.M. Yeatman,"High Q microwave inductors on silicon by surface tension self-assembly,"IEE Electron. Lett., vol. 36, no. 20, pp. 1707-1708, 2000.
[41] Advanced Design System / Momentum : EDA tools, Agilent Technologies, Inc..
[42] Seong-Mo Yim and K.O. Kenneth, "Demonstration of a Switched Resonator Concept in a Dual-Band Monolithic CMOS LC-tuned VCO,"Proceedings of the IEEE 2001 Custom Integrated Circuit Conference., pp. 205-208, May 2001.
[43] http://www.cmicro.com/webhelp/Product-Guide2006.htm.
[44] http://rftc.ndl.org.tw/service/rule/sld004.htm.
[45] A. M. Nihejad and R. G. Meyer,"Analysis, Design, and Optimization of Spiral Inductors and Transformers for Si RF IC's,"IEEE Journal of Solid-State Circuits., vol. 33, no. 10, pp.1470-1481, Oct. 1998.
[46] M. Fujishima, Kino Jun,"Accurate subcircuit model of an on-chip inductor with a new substrate network,"Symposium on VLSI Circuits 2004., pp. 376-379, June 2004.
[47] B. L. Ooi, D. X. Xu, P. S. Kooi, and F. J. Lin,"An Improved Prediction of Series Resistance in Spiral Inductor Modeling With Eddy-Current Effect,"IEEE Transaction on Microwave Theoly and Techniques., vol. 50, pp. 2202-2206, Sept. 2002.
[48] Y. Cao, R. A. Groves, X. Huang, N.D. Zamdmer, J. O. Plouchart, R. A. Wachnik, T. J. King, and C. Hu,"Frequency-Independent Equivalent-Circuit Model for On-Chip Spiral Inductors,"IEEE Journal of Solid-State Circuits., vol. 38, no. 3, pp. 419-426, Mar. 2003.
[49] S. Kim and D. P. Neikirk,"Compact Equivalent Circuit Model for the Skin Effect," IEEE MTT-S International., vol. 3, pp. 1815-1818, June 1996.
[50] D. Melendy, P. Francis, C. Pichler, K. Hwang, G. Srinivasan, and A. Weisshaar,"A New Wide-Band Compact Model for Spiral Inductors in RFICs,"IEEE Electron Device Letters., vol. 23, no. 5, pp. 213-215, May, 2002.
[51] Behzad Razavi,"RF Microelectronics,"Upper Saddle River, NJ：Prentice Hall, 1998.
[52] P. Andreani, A. Bonfanti, L. Romano, and C. Samori,"Analysis and design of 1.8 GHz CMOS LC quadrature VCO,"IEEE Journal of Solid-State Circuits., vol. 37, no 12, pp. 1737-1747, December 2002.
[53] B. Razavi,"A study of phase noise in CMOS oscillators,"IEEE J. Solid-State Circuits., vol. 31, pp.331-343, Mar. 1996.
[54] B. Razavi,"A 1.8 GHz CMOS voltage-controlled oscillator,"in Proc. ISSCC 1997, pp. 388-389, Feb. 1997.
[55] T.-P. Liu,"A 6.5 GHz monolithic CMOS voltage-controlled oscillator,"in proc. ISSCC 1999, pp. 404-405. Feb. 1999.
[56] A. M. ElSayed and M. I. Elmastry,"Low-phase-noise LC quadrature VCO using coupled tank resonators in a ring structure,"IEEE J. Solid-State Circuits., vol. 36, pp.701-705, Apr. 2001.
[57] A. Rofougaran, J. Rael, M. Rofougaran, and A. Abidi,"A 900 MHz CMOS LC-oscillator with quadrature outputs,"ISSCC 1996, pp. 392-393, Feb. 1996.
[58] P. Vancorenland and M. Steyaert,"A 1.57 GHz fully integrated very low phase noise quadrature VCO,"2001 Symp. VLSI Circuits., pp. 111-114, June 2001.
[59] P. van de Ven, J. van der Tang, D. Kasperkovitz, and A. van Roermund,"An optimally coupled 5 GHz quadrature LC oscillator,"2001 Symp. VLSI Circuits, pp. 115-118, June 2001.
[60] D. Leenaerts, R. van de Beek, G. van der Weide, J. Bergervoet, K. S. Harish, H. Waite, Y. Zhang, C. Razzell, and R. Roovers,"A SiGe BiCMOS 1 ns fast hopping frequency synthesizer for UWB radio,"in IEEE Int. Solid-State Circuits Conf. Tech. Dig., pp. 202-203, Feb. 2005.
[61] J. Lee and D. Chiu,"A 7-band 3-8 GHz frequency synthesizer with 1 ns band-switching time in 0.18 μm CMOS technology,"in IEEE Int. Solid-State Circuits Conf. Tech. Dig., pp. 204-205, Feb. 2005.
[62] C. Sandner and A. Wiesbauer,"A 3 GHz to 7 GHz fast-hopping frequency synthesizer for UWB,"in Joint Int. Ultra Wideband Systems Workshop/Ultrawideband Systems and Technologies Conf., pp. 405-409, May 2004.
[63] Jae-Hong Chang; Choong-Ki Kim.,"A symmetrical 6-GHz fully integrated cascode coupling CMOS LC quadrature VCO,"IEEE Microwave and Wireless Components Letters., vol. 15, no 10, pp. 670 - 672, Oct. 2005.
[64] Gia-Shiang Wang, Shin-Hau Chang, Tzuen-Hsi Huang, Yi-Hsin Pang, Szu-Hsien Wu, and Tzuyi Yang,"Demonstration of an Area-Cost-Efficient Switched Differential Inductor for VCO Circuit Applications,"Proc. of WCEsp2005., session 17 - 5, Taiwan, Nov. 2005.
[65] J. van der Tang, P. van de Ven, D. Kasperkovitz, A. van Roermund,"Analysis and design of an optimally coupled 5-GHz quadrature LC oscillator,"IEEE J. Solid-State Circuits., vol. 37, no. 5, pp. 657-661, May 2002.
[66] B. Razavi,"Design of integrated circuits for optical communications,"Boston, McGraw-Hill, 2003.
[67] Reinhold Ludwig, Pavel Bretchko,"RF circuit design：theory and applications,"Upper Saddle River, NJ :Prentice Hall,c2000.
[68] Yu-Chang Chen,"Analysis, Design and Implementation of Broadband Amplifiers and Oscillators,"Master Thesis Submitted to the E.E. Department, NTU, June 2002.
[69] Yi-Liang Liu,"A VCO Circuit Using Switchable Differential Inductor for the GSM(1.8 GHz)/WLAN (2.4 GHz) Co-existence System Application,"Master Thesis Submitted to the E.E. Department, NCKU, July 2006.
[70] Hsun-Hao Chang,"CMOS Wideband VCO Design for DTV Tuner,"Master Thesis Submitted to the E.E. Department, NCKU, July 2006.

校內：2007-08-21公開
校外：2007-08-21公開

簡易檢索 / 詳目顯示

相關論文