在半導體的發展過程中，為了增加元件的速度及效能，使得元件必須不斷縮小尺寸，二氧化矽絕緣層厚度則將微縮至奈米左右，而產生漏電流大量增加使遷移率降低的問題，為了維持電性不變採用高介電係數材料作為絕緣層，降低因微縮帶來的漏電流問題。
隨本論文採用濺鍍法製作MIS 電容，薄膜沉積分別討論五種情況，分別為不同基板溫度、不同濺鍍功率、不同通氣（OMR= Ar2/(O2 +Ar2)）比例、BST 薄膜添加錳的影響、及回火所造成的影響，製作出MIS 電容。實驗中發現OMR 為0.5（氬：氧=6：6）腔體壓力10m torr、濺鍍功率100 瓦、機板溫度550 度具有最佳的特性，漏電流值約為0.41uA/cm2（at 5V）。在薄膜添加錳後，討論錳添加量對於薄膜電性影響，測結果發現，隨錳含量的增加，使薄膜表面粗糙度降低，有助於薄膜緻密性，在電性方面量測的結果，則會使漏電流因此降低，其中在1Wt%時所製作出的MIS 電容有最低的漏電流88.5n A/cm2（at 5V），並由回火650 度得到最低之漏電流62.3n A/cm2（at 5V）。

During developing semiconductor process, the IC must scaling size for enchance IC velocity and affect .The SiO2 insulator layer will scale to narosize . Because the leakeage current becomes large , IC mobilty decreases and current drive is not enough to push next cuircuit. The insulator layer uses high k to reduce scaling size current
problem.The deposited method in thesis was adopted the R.F. supptering .The thesis discusses five diffrence type of BST thin films deposition. It are variable deposited
temperture、variable deposited power、variable OMR、variable dopped manganese on BST thin film、and anneling temperture of the BST thin film. In the only BST thin
film discussion, the bast electric charateristic is OMR（Ar：O2=6：6）that I measure ； on the contrary , although in the fewer O2 concentration was deposted vary fast , the BST thin film which dielectric content and leakage currence was poor . Dopping Mn in the thin film was found when it increases Mn to decrease rms and enhace
deposition quality . So we discussed dopping Mn on thin film and oxygen vacancies , relation. Afrer dopping 1wt% Mn ,and leakage current was 8.85E-8 A/cm2,and used
annealing to get the best leakage current 6.23E-8 A/cm2.

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