本論文探討應用微機電系統製程技術研製各種感測器與高頻電感器之特性，並對其製程技術做最佳化的調整。所研究的感測器包括微型接觸式剪應力感測器、輻射熱型紅外光檢測器及高頻電感元件。
　　對於微型接觸式剪應力感測器的研究，吾人以單晶矽為材料，且採用單一個有四端接線、對剪應力靈敏之壓電阻應變規來取代最普遍之惠斯頓橋式結構。設計主要之考量在於壓力靈敏度與靈敏度之溫度係數，而設計步驟分為正方形平膜邊長之設定、平膜厚度之決定、摻雜應變規尺寸之限定、絕緣層厚度之選擇、絕緣層形成方法、摻雜應變規之方位及摻質濃度之抉擇，過程中利用有限元素法來分析應力以供設計參考。
　　其次，吾人利用以快速昇溫化學氣相沈積成長單晶SiGeC之技術，並以此作為元件熱敏電阻，研製測輻射熱型紅外光檢測器，且利用微機電系統製程技術研製具有熱阻隔作用的懸橋結構，提高元件之熱絕緣性，並使元件主體薄膜化程度增大，以提高了熱型感測器的感度和響應速度，此外吾人還利用電腦模擬軟體ANSYS找出元件微結構之最佳化設計，諸如元件大小、抗壓性、熱絕緣性之模擬，開發完成此元件並探討其特性。
　　最後吾人研製高品質參數之晶片式螺旋型電感元件設計。首先利用微機電系統製程技術去除包圍晶片電感的介電材料，使得從晶片電感到矽基板的能量損失降低，進而增加晶片電感的參數品質。並進一步以有限元素分析法模擬螺旋型電感結構所能承受之最大外力和其螺旋圈數、與各種不同支撐結構間的關係，以及散熱問題等。此外更將吾人所研製之平面螺旋型電感元件與一些不同電感結構﹔如方型螺線管、鋸齒型螺線管與堆疊螺旋型等結構電感的機械特性與最大容許電流做一分析與比較。

　　In this dissertation, we report the study of Micro-electro-mechanical system (MEMS) technology for sensors, including, shear-stress sensor, far infrared sensor and RF inductor applications. The Finite Element Method (FEM) package ANSYS has been employed for the thermal isolation, stress distribution, impact force and temperature distribution analysis.
　　Firstly, we study the preparation of prototype contact type micro piezoresistive shear-stress sensor that can be utilized to measure the shear stress between skin of stump and socket of Above-Knee (AK) prosthesis. MEMS technology has been chosen for the design because of the low cost, small size and adaptability to this application. The Finite Element Method (FEM) package ANSYS has been employed for the stress analysis of the micro shear-stress sensors. The sensor contains two transducers that will transform the stresses into an output voltage. The piezoresistive strain gauges were implanted with boron ions. Static characteristics of the shear sensor were determined through a series of calibration tests. In addition, the results simulated by FEM are validated by comparison with experimental investigations.
　　Next, we report the design, fabrication and performance of a novel crystal SiGeC infrared sensor with wavelength 8-14mm for portable far infrared ray (FIR) in rehabilitation system application. The operation principle of the sensor is based on the change of thermistor’s resistance under the irradiation FIR light. The thermistor in the IR detector is made of Si0.68Ge0.31C0.01 thin films for its large activation energy and the temperature coefficient. Finite Element Method (FEM) package ANSYS has been employed for analyze of the thermal isolation and stress distribution in the IR detector. In addition, a comparison between the detectors both with and without the micro-bridge structure has been made in order to verify the improvement of the thermal isolation and lowering of the thermal conductance owing to the micro-bridge structure. The complete process and measured thermal conductance, thermal time constant and the heat capacity of developed FIR sensor have been described in detail.
　　Finally, we study the design, fabrication and comparison various geometry of deep sub-micron high Q suspended spiral on chip inductors. In the design, finite element program, ANSYS, were used for electrical-characteristics, maximum endurable impact force and thermal conduction simulations, respectively. Based on the design, suspended 10-turns spiral inductor with different air cavity structures, i.e., diamond opening, circle opening, triangle opening and full suspended with pillar supports were developed for different applications. Among these structures, the suspended inductor with pillar support possesses the highest Qmax (maximum of quality factor) of 6.6 at 2 GHz, the least effective dielectric constant of 1.06, and the lowest endurable impact force 0.184 Newton. On the other hand, the spiral inductor with diamond opening has a lowest Qmax of 4.3, the largest effective dielectric constant of 3.44 and highest endurable impact force 4 Newton. The former is suitable for station telecommunication applications in which the mechanical vibration is not a serious concern, while the latter can be used for mobile telecommunication applications subject to strong mechanical vibrations. Additionally, the conventional on-chip spiral inductor embraced by SiO2 with a dielectric constant of 4 was prepared for comparison and found its Qmax is 3.8 at 1.2 GHz.
　　Moreover, the impact force, the maximum allowable operating current of inductors with various structures, including planar spiral inductor, square solenoid inductor, inclined solenoid inductor, and stacked spiral inductors have been simulated and compared.

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