在本論文中首先將探討以 (Mg1-xM2+x)4Nb2O9 (M = Co、Ni)的微波介電特性及材料的微結構。由實驗結果可知 (Mg1-xCox)4Nb2O9與 (Mg1-xNix)4Nb2O9在燒結溫度 1340℃持溫4小時可得到最佳之介電特性。當M = Co且x = 0.04時，可得到 (Mg1-xCox)4Nb2O9之最佳介電特性 εr = 12.79，Q׃ = 235000 GHz (at 11.82GHz)， τƒ = -63.93 ppm/℃。當M = Ni且x = 0.05時，可得到 (Mg1-xNix)4Nb2O9的最佳介電特性 εr = 12.55，Q׃ = 233000 GHz (at 12.27 GHz)，τƒ = -68.56 ppm/℃。為了實現材料的溫度穩定性，我們在 (Mg0.96Co0.04)4Nb2O9與 (Mg0.95Ni0.05)4Nb2O9微波介電材料中選擇添加 為正值的 SrTiO3 (εr ~ 205、Q׃ ~ 4200GHz、τƒ~ +1700ppm/℃)[1]。
此外，本論文將分別以 FR4、 Al2O3及 0.6(Mg0.96Co0.04)4Nb2O9-0.4SrTiO3作為基板來設計一曲折式步階阻抗帶通濾波器，濾波器的規格為：中心頻率 2.4GHz、頻寬為 6%，並使用電磁模擬軟體 HFSS來進行電腦模擬。

Frist, the microwave dielectric properties and the microstructures (Mg1-xM2+x)4Nb2O9 (M = Co、Ni) were investigated in this paper. The experiment results show that (Mg1-xCox)4Nb2O9 and (Mg1-xNix)4Nb2O9 have the best properties at sintering temperature 1340℃ for four hours. When M = Co and x = 0.04, we can obtain the best dielectric propertyes of (Mg1-xCox)4Nb2O9: εr = 12.79, Q׃ = 235000 GHz (at 11.82GHz), τƒ = -63.93 ppm/℃. With M = Ni and x = 0.05, the best dielectric properties εr = 12.55, Q׃ = 233000 GHz (at 12.27GHz), τƒ = -68.56 ppm/℃ were obtained for (Mg1-xNix)4Nb2O9. In order to achieve a temperature-stable material, we choose to add the positive temperature-coefficient material SrTiO3 (εr ~ 205、Q׃ ~ 4200 GHz、 τƒ ~ +1700 ppm/℃) to (Mg0.96Co0.04)4Nb2O9 and (Mg0.95Ni0.05)4Nb2O9 microwave dielectric materials.
Besides, a bandpass filter using meandering stepped impedance resonators have been designed on FR4、Al2O3 and 0.6(Mg0.96Co0.04)4Nb2O9-0.4SrTiO3 substrates. The band-pass frequency is 2.4GHz, the bandwidth is 6% and simulated by electromagnetic simulation software, HFSS.

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