在本論文中，我們以有機金屬氣相磊晶系統成長III-N-V化合物半導體和其異質結構，包括GaNAs、 InGaNAs、GaInNP及GaNAs/GaAs，InGaNAs/GaAs量子井結構。並以高解析度X射線繞射儀、調制光譜儀、光激發螢光光譜儀、二次離子質譜分析儀及高解析度電子穿透顯微鏡等量測設備分析成長材料之特性。
在(In)GaAs裡加入氮會產生一個由局部局限氮的能態所造成的窄能帶，這個由氮所產生的窄能帶會跟原本的(In)GaAs導電帶強烈地交互作用，並產生兩個新的能階，而這個能帶跟能帶間的交互作用會因為氮的組成增加而增強，所產生的這兩個新能階的能量差距也會因為氮的組成增加而變大，這個所謂的”能帶交互作用”模型可以被用來說明氮在加入 (In)GaAs後所造成對能帶結構變化的影響，在本論文中，氮的組成也是使用”能帶交互作用”模型決定。
我們用氮原子周圍環境的結構變化跟氫原子所造成的能帶改變來說明在退火後InGaNAs/GaAs量子井發光波長的變化。首先，銦及氮之間的鍵結會隨著退火溫度的上升而增加，而造成能帶的藍移，相反的，氫原子的覆蓋會對氮的加入所造成的能帶減少產生相反的作用，也就是說，退火後會消除氫原子的覆蓋而造成能帶的紅移，上述的這兩個因素可以合理的解釋退火後能帶的變化。
在本論文中，我們對(In)GaNAs的成長條件做了詳盡的探討。我們發現很多長晶的參數，包括長晶溫度、銦的組成、TBAs的分壓、成長速度及DMHy對整個五族元素的比例都會對氮的加入造成很大的影響。由溫度的變化對光激發螢光光譜的研究，我們發現InGaNAs比InGaAs有比較低的能隙對溫度的相關性，而且活化能隨著氮組成的增加而變大。此外，在高的氮含量試片中，由於銦跟氮的組成分配不均勻，我們發現了銦和氮的群聚及其所造成異常的光特性。
在本論文中，我們也探討了GaInNP成長在GaAs基板上的結構跟光的特性，也探討了自發性有序排列的材料特性跟溫度變化所造成的能帶變化，在室溫下，對[110]和 這兩個方向所做的極化研究包括極化的高解析度X射線繞射光譜、極化的非接觸電場調制光譜、跟極化的壓電電場調制光譜，我們發現的確有某種程度的自發性有序排列現象的材料特性存在，由高解析度的電子穿透顯微技術所觀察到的由有序性排列所造成的類似超晶格微結構的現象可以進一步證明自發性有序排列現象的確存在於GaInNP的化合物半導體裡。
在元件應用方面，用有機金屬氣相沈積系統成長以InGaNAs量子井來當作主動層的邊射型雷射結構，並製作成寬區域的雷射，雷射光譜顯示發光波長在1.2微米，坡度效率為1.94W/A，還有臨限電流密度為600 A/ cm2，除此之外，我們用InGaAs/GaAsP跟InGaNAs當作基極材料並成功地製作了低功率消耗的雙異質接面電晶體，跟傳統用GaAs當作基極材料的異質接面電晶體相比，導通電壓降低了225 mV，最高的電流增益為85，截止頻率跟最大震盪頻率分別為55GHz和45GHz。
本論文的目標是用有機金屬氣相沈積系統去成長高品質的InGaNAs四元化合物半導體跟量子井結構；更重要的是把這個四元化合物半導體應用在低功率消耗的異質接面電晶體還有發光波長在1.3微米的量子井雷射，來作為在光纖通訊裡收發器模組的主要元件，進而對光纖通訊的發展做出重要的貢獻。

In this dissertation, the III-N-V alloys and their heterostructures including GaNAs, InGaNAs, GaInNP, GaNAs/GaAs and InGaNAs/GaAs quantum wells have been grown by metal organic vapor phase epitaxy (MOVPE). Several material characterization techniques, such as high resolution X-ray diffraction (HRXRD), Modulation spectroscopy, photoluminescence (PL), secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) have been performed to characterize the material quality of these epitaxial structures.
The influence of N incorporation on the band structure of (In)GaAs is described by a simple two-level “band anticrossing” model (BAC). A narrow band of highly localized N states interacts strongly with the extended conduction band edge states of the (In)GaAs host crystal. The N-induced perturbation is enhanced as the N composition increases. The resulting two levels are denotes as E+ and E, and the energy difference between them increases with increasing N composition. The level of E is related to the fundamental bandgap transition energy of (In)GaNAs conduction band. The compositional assessment of grown In(x)Ga(1-x)N(y)As(1-y) alloys in this dissertation is also performed by using BAC model.
The local N configuration and hydrogen-induced bandgap tuning have been gave a detailed discussion in order to explain the variation of the emission wavelength of InGaNAs/GaAs quantum wells after annealing. The evolution towards more In-N bonds during annealing at elevated temperature is supposed to result in the bandgap blue shift. On the contrary, hydrogen-passivated is found to lead to a complete reversal of the drastic bandgap reduction caused by N, that is, elimination of hydrogen-passivated results in the bandgap red shift. These two factors described above can reasonably explain the variant bandgap after annealing.
The growth conditions of (In)GaNAs have been well studied in this dissertation. Many growth parameters including growth temperature, indium content, TBAs partial pressure, growth rate and the ratio of DMHy/(DMHy+TBAs) are found to effect the nitrogen incorporation. The temperature dependent photoluminescence is performed and it is found that InGaNAs has lower temperature bandgap dependence than InGaAs. The activation energy is increased with increasing nitrogen composition. In addition, In- and N-rich cluster and its abnormal optical characteristics observed in the highly nitrogen incorporated InGaNAs alloys is supposed to the highly compositional fluctuation of indium and nitrogen.
The structural and optical properties of GaInNP grown on GaAs substrate are also presented in this dissertation. The spontaneous ordering behavior and temperature dependent near band edge transition energy are also presented. The polarized- high-resolution x-ray rocking curves (HXRC), contactless electroreflectance (CER) and piezoreflectance (PzR) spectra at room temperature show anisotropic character along the [110] and directions, which can prove there exist some degree of the spontaneous ordering phenomenon in the GaInNP alloys. Ordering-induced superlattice-like microstructure observed in high-resolution transmission electron microscope (HTEM) images confirms the spontaneous ordering in the Ga0.46In0.54NxP1-x alloys.
For the device application, edge-emitting laser structures with InGaNAs quantum well active region has been grown by MOVPE and is fabricated as broad area laser diodes. The laser spectrum emits at 1.2 um, the slope efficiency is 1.94 W/A and the threshold current density is 600 A/cm2. In addition, the double heterojunction bipolar transistors (DHBTs) with low turn-on voltage by using InGaAs/GaAsP and InGaNAs as base material have been successfully fabricated and characterize. A turn-on voltage reduction of 225 mV over the conventional HBT with GaAs base layer is obtained. The device has a peak current gain of 85 and shows good high frequency characteristics of fT and fMAX are 55GHz and 45GHz, respectively.
The aim of this dissertation is to grow high quality InGaNAs quaternary alloys and quantum wells by MOVPE; the most important thing is application on the low power consumption heterojunction bipolar transistors (HBTs) and quantum well lasers toward 1.3 um emission for use as the principal devices in the transceiver module and thus contributes to the development of optical fiber communication.

Chapter 1
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Chapter 2
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Chapter 3
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Chapter 5
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Chapter 6
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Chapter 7
[7.1] B. Mazhari, G.B. Gao and H. Morkoc, “Collector-emitter offset voltage in heterojunction bipolar transistors,” Solid-State Electron., vol.34, pp.315-321, 1991.
[7.2] R.J. Welty, Y.G. Hong, H.P. Xin, K. Mochizuki, C.W. Tu and P.M. Asbeck, “Nitrogen incorporation in GaInP for novel heterojunction bipolar transistors,” IEEE/Cornell conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, pp.33-40, 2000.