本論文旨在研究應用於不斷電系統之三相整流器，三相整流器之架構為三相四線制VIENNA整流器，其架構之優點為高功率密度、低開關耐壓、低切換損失及無須怠滯時間等，開關元件採用碳化矽，驅動電路透過負壓關斷，以確保高速切換中功率元件能有效運作，三相四線制VIENNA整流器可解耦成單相VIENNA整流器進行分析及設計，三相四線制系統能於不平衡系統下正常運作，增加穩定性。文中探討各類三相整流器之電路架構，分析各架構優缺點，選擇適合操作高頻之三相整流器架構，使用電路模擬軟體進行電路模擬，實作一三相四線制VIENNA整流器，交流輸入電壓三相400 VL-L下，總輸出功率為3 kW，輸出規格800V/3.75 A，經實驗驗證整體電路最高效率達98.2 %，功率因數為0.997，電流總諧波失真為1.7 %，且在各負載條件下，諧波電流均符合EN61000-3-2規範上限值，達成高效率、高功率因數、低諧波電流之三相四線制整流器。

This thesis focuses on the analysis and implementation of three-phase rectifiers for uninterruptible power system. The topology of the three-phase rectifier in this thesis is a three-phase four-wire VIENNA rectifier, which has the advantages of high power density, low breakdown voltage, and low switching loss and no need dead time design, etc., the switching power device uses SiC, and the negative voltage turn-off is also used in the driver circuit to ensure reliable and effective operation of the power device during high-speed switching. The three-phase four-wire VIENNA rectifier can be decoupled into a single-phase VIENNA rectifier for analysis and design, and the three-phase four-wire system can still operate normally under the unbalanced system, which increases the stability of the system. This thesis discusses the circuit topology of various three-phase rectifiers, analyzes the advantages and disadvantages of each topology. Finally, select the three-phase rectifier topology suitable for high-frequency operation, use the circuit simulation software for circuit simulation, as a three-phase four-wire rectifier, the total output power is 3 kW, and the output specification is 800V/3.75 A. It is verified by experiments that the highest efficiency of the overall circuit is 98.2%, the power factor is 0.997, and the THDi is 1.7%, and under various load conditions, harmonic currents are in compliance with the upper limit of EN61000-3-2 specification, achieving a three-phase four-wire rectifier with high efficiency, high power factor and low harmonic current.

[1] F. C. Lee, “High-frequency quasi-resonant and multi-resonant converter technologies,” Proc. IEEE IECON’88, pp. 509-521, 1988.
[2] M. Dayarathna, Y. Wen, and R. Fan, “Data center energy consumption modeling: A survey,” IEEE Commun. Surveys Tut., vol. 18, no. 1, pp. 732–794, Sep. 2016.
[3] IEC 62040-3:2011, Ed. 2.0, Uninterruptible power systems (UPS) -Part 3: Method of specifying the performance and test requirements, Section J.2.
[4] J. W. Kolar and T. Friedli, “The essence of three-phase PFC rectifier systems–part I,” IEEE Trans. Power Electron., vol.28, no.1, pp.176- 198, Jan. 2013.
[5] C. Luo, X. Y. Wang, T. Y. Jiang, R. Feng, H. T. Xin, and H. Li, “Experimental study of a SiC MOSFET based single phase inverter in UPS applications,” in Proc. Conf. IEEE Energy Conversion Congress and Exposition, 2016, pp. 1-6.
[6] K. Yamaguchi, K. Katsura, and T. Yamada, “Comprehensive evaluation and design of SiC-based high power density inverter, 70kW/liter, 50kW/kg,” in Proc. IEEE Int. Power Electron. Motion Control Conf. ECCE Asia, May 2016, pp. 1–7.
[7] M. Alsolami, M. Scott, and J. Wang, “A gallium nitride device based switched capacitor multilevel converter for UPS applications,” in Proc. 2015 IEEE Appl. Power Electron. Conf. Expo., Mar. 2015, pp. 1002–1007.
[8] D. Shahzad, N. Zaffar, and K. K. Afridi, ‘‘High-power-density GaN-based single-phase online uninterruptible power supply,’’ in Proc. IEEE Energy Convers. Congr. Exposit. (ECCE), Sep. 2019, pp. 515–520.
[9] J. Kim, D. Shin, and S.-K. Sul, “A damping scheme for switching ringing of full SiC MOSFET by air core PCB circuit,” IEEE Trans. Power Electron., vol. 33, no. 6, pp. 4605–4615, Jun. 2018.
[10] N. Oswald, P. Anthony, N. McNeill, and B.H. Stark, “An experimental investigation of the tradeoff between switching losses and EMI generation with hard-switched All-Si, Si-SiC, and All-SiC device combinations,” IEEE Trans. Power Electron., vol. 29, no. 5, pp. 2393–2407, May 2014.
[11] X. Gong and J. A. Ferreira, “Comparison and reduction of conducted EMI in SiC JFET and Si IGBT-based motor drives,” IEEE Trans. Power Electron., vol. 29, no. 4, pp. 1757–1767, Apr. 2014.
[12] A. Nakajima, M. Shimizu, and H. Ohashi, “Power loss limit in unipolar switching devices: Comparison between Si superjunction devices and wide-bandgap devices,” IEEE Trans. Electron Devices., vol. 56, no. 11, pp. 2652–2656, Nov. 2009.
[13] K. Shenai, “Future Prospects of wide bandgap semiconductor power switching devices,” IEEE Trans. Electron Devices., vol. 62, no. 2, pp. 248–257, Feb. 2015.
[14] J. Millan, P. Godignon, X. Perpina, A. Perez-Tomas, and J. Rebollo, “A survey of wide bandgap power semiconductor devices,” IEEE Trans. Power Electron., vol. 29, no. 5, pp. 2155–2163, May 2014.
[15] G. Liu et al., “Comparison of SiC MOSFETs and GaN HEMTs based high-efficiency high-power-density 7.2kW EV battery chargers,” in Proc. IEEE 5th Workshop Wide Bandgap Power Devices Appl., Albuquerque, NM, USA, 2017, pp. 391–397.
[16] B. Li, Q. Li, F. C. Lee, Z. Liu, and Y. Yang, “A high-efficiency high-density wide-bandgap device-based bidirectional on-board charger,” IEEE J. Emerg. Sel. Topics Power Electron., vol. 6, no. 3, pp. 1627–1636, Sep. 2018.
[17] T. F. Wu, P. H. Lee, L. C. Lin, C. H. Chang, and Y. K. Chen, “Circulating current reduction for three-phase back-to-back transformerless inverter with SPWM-based D- digital control,” IEEE Trans. Power Electron., vol. 32, no. 2, pp. 1591–1601, Feb. 2017.
[18] J. Wu, F. C. Lee, D. Boroyevich, H. Dai, K. Xing, and D. Peng, “A 100 kW high-performance PWM rectifier with a ZCT soft-switching technique,” IEEE Trans. Power Electron., vol. 18, no. 6, pp. 1302–1308, Nov. 2003.
[19] M. T. Zhang, Y. Jiang, F. C. Lee, and M. M. Jovanovic, “Single-phase three-level boost power factor correction converter,” in Proc. 10th IEEE Annu. Appl. Power Electron. Conf. Expo., 1995, pp. 434–439.
[20] J.-H. Suh, C.-H. Choi, and D.-S. Hyun, “A new simplified space-vector PWM method for three-lever inverters,” in Conf. Rec. IEEE-IAS Annu. Meeting, 1999, pp. 515–520.
[21] S. Ohn, J. Yu, R. Burgos, D. Boroyevich, and H. Suryanarayana, “Reduced common-mode voltage PWM scheme for full-SiC three-level uninterruptible power supply with small DC-link capacitors,” IEEE Trans. Power Electron., vol. 35, no. 8 pp. 8638 - 8651, Aug. 2019.
[22] A. Nabae, I Takahashi, and H. Akagi, “A new neutral-point-clamped PWM inverter,” IEEE Trans. Ind. Appl., vol. IA-17, pp. 518-523, Sept. 1981.
[23] V. Yaramasu and B. Wu, “Predictive control of a three-level boost converter and an NPC inverter for high-power PMSG-based medium voltage wind energy conversion systems,” IEEE Trans. Power Electron., vol. 29, no. 10, pp. 5308–5322, Oct. 2014.
[24] J. Kolar and F. Zach, “A novel three-phase utility interface minimizing line current harmonics of high-power telecommunications rectifier modules,” IEEE Trans. Ind. Electron., vol. 44, no. 4, pp. 456–467, Aug. 1997.
[25] P. Karutz, S. D. Round, M. L. Heldwein, and J. W. Kolar, “Ultra compact three-phase PWM rectifier,” in Proc. 22nd Annu. IEEE Appl. Power Electron. Conf. (APEC 2007), Feb. 25–Mar. 1, pp. 816–822.
[26] J. W. Kolar, H. Ertl, and F. C. Zach, “Design and experimental investigation of a three-phase high power density high efficiency unity power factor PWM (VIENNA) rectifier employing a novel integrated power semiconductor module,” in Proc. of the 11th Annual Appl. Power Electron. Conf. and Exp. (APEC ’96), vol. 2, 1996, pp. 514–523.
[27] J. Miniboeck and J. W. Kolar, “Wide input voltage range high power density high efficiency 10 kW three-phase three-level unity power factor PWM rectifier,” in Proc. of the 33rd Annual IEEE Power Electron. Spec. Conf. (PESC ’02), vol. 4, 2002, pp. 1642–1648.
[28] T. Thangavelu, P. Shanmugam, and K. Raj, “Modelling and control of VIENNA rectifier a single phase approach,” IET Power Electron., vol. 8, no. 12, pp. 2471–2482, Dec. 2015.
[29] MS-184060-2 Datasheet, Micrometals, 2014.
[30] LA 55-P Datasheet, LEM, 2018.
[31] UCx854 Datasheet, Texas Instruments, 2016.