本研究主要對具有NaCl-type結構的氧化鎳薄膜，在純氧氣氛中，不同射頻磁控濺鍍功率及基板溫度，將氧化鎳薄膜沈積於康寧玻璃(Corning 1737)基板上。與氧化鎳薄膜相關的性質，例如基板溫度、薄膜厚度、從優取向、表面型態、顯微組織、結晶結構、電性及光學性質都被研究。薄膜相關性質的獲得是以低掠角X光繞射儀(GIXRD)、高解析掃瞄式電子顯微鏡(HR-SEM)、高解析穿透式電子顯微鏡(HR-TEM)、原子力顯微鏡(AFM)、可見光譜儀、四點探針及霍爾效應量測。從X光繞射、掃瞄式電子顯微鏡和穿透式電子顯微鏡證實，所有的氧化鎳薄膜為多晶的結構。薄膜相關的厚度效應、基板溫度效應和時效效應等都被討論。薄膜厚度及基板溫度的影響，對顯微組織參數所產生的變化，諸如結晶尺寸(L)、疊差機率、應變和密度(D)等都被研究。所得結果顯示，薄膜晶粒尺寸隨薄膜厚度增加而增加。氧化薄膜電阻率，隨薄膜厚度及基板溫度增加而增加，主要原因為載子濃度隨薄膜厚度及基板溫度增加而減少。薄膜沈積於較低的基板溫度(< 473 K)，薄膜結晶結構發展成具有(111)從優取向。當薄膜沈積於較高的基板溫度(> 473 K)，則薄膜結晶結構具有(200)從優取向。在本論文中並且提出，從優取向(preferred orientation)發展的模式。氧化鎳薄膜在時效過程中，薄膜電性是非常不穩定，且薄膜電阻率隨時效時間增加而增加。氧化鎳薄膜暴露在純氧或大氣環境中，薄膜與氧或其他氣體反應、吸附可以用來被解釋，時效過程中氧化鎳薄膜電阻率增加的原因。利用微波加熱氧化鎳薄膜，確實可改善薄膜時效過程中電阻率增加的速度。

　Nickel oxide thin films with NaCl-type were deposited onto Corning glass substrates at different substrate temperatures by RF magnetron sputtering in a pure oxygen atmosphere. The relationships among substrate temperature, film thickness, and preferred orientation, surface morphology, and microstructure, structural, optical and electrical properties of NiO films were investigated. The resulting films were analyzed by grazing-incidence X-ray diffraction (GIXRD), ultrahigh resolution scanning electron microscope (HR-SEM), high-resolution transmission electron microscope (HR-TEM), atomic force microscopy (AFM), visible spectrum, four-point probe and Hall-effect measurements. The dependences of film properties on thickness effect, substrate temperature and aging effect were studied. The X-ray diffraction (XRD), Scanning electron microscope (SEM) and transmission electron microscope (TEM) analyses of nickel oxide films indicate that these films are polycrystalline films. The variations of the microstructural parameters, such as crystallite size (L), stacking fault probability (α), strain (ε) and density (D), with film thickness and substrate temperature were investigated. The results show the crystallite sizes increaser as the thickness of the film increases. The variation of the dislocation density and the stacking fault probabilities and strain decrease as the thickness increases. The resistivity of NiO film is increased with an increase in film thickness and substrate temperature, which is related to the decrease of carrier concentration with film thickness and substrate temperature. Films deposited at lower deposition temperature region (< 473 K) develop a (111) preferred orientation. At higher deposition temperature, the (200) preferred orientation was developed. A model of developing preferred orientation was proposed in this paper. Electrical properties of NiO films were unstable and show an aging effect. Resistivity of NiO films increases as the time of natural aging increases. Oxygen or another gas chemisorption and reaction with NiO films are used to explain in aging of the NiO films in oxygen and atmosphere. Microwave heating was used to improve aging effect of NiO films.

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