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研究生：	陳佳勳 Chen, Chia-Hsun
論文名稱：	氣相冷凝法製作氧化鋅p-i-n紫外線偵測器 Ultraviolet Photodetectors of p-GaN/i-ZnO/ n-ZnO:Al Using Vapor Cooling Condensation Technique
指導教授：	李炳鈞 Li, Bing-Jing
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電機工程學系 Department of Electrical Engineering
論文出版年：	2009
畢業學年度：	97
語文別：	英文
論文頁數：	49
中文關鍵詞：	紫外線偵測器、氧化鋅
外文關鍵詞：	ZnO, UV photodetector
相關次數：	點閱：38 下載：0
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二六族半導體氧化鋅 (ZnO)是橫截面六方晶系的纖維鋅礦(wurtzite) 結構。由於氧化鋅為一具有寬能隙直接能隙半導體。近年來愈來愈多氧化鋅應用於光電元件上，用氧化鋅材料已被用於製作藍光/紫外光發光二極體 (blue/ultraviolet light-emitting diodes)，敝論文應用氧化鋅材料製作紫外線偵測器 (ultraviolet photodetectors)。目前成長氧化鋅材料的方法有真空濺鍍 (sputtering)、分子束磊晶 (Molecular Beam Epitaxy)、有機金屬化學氣相沉積 (Metal Organic Chemical Vapor Deposition)。敝論文利用氣相冷凝法成長高品質低缺陷i-ZnO製作p-i-n (p-GaN/i-ZnO/n-ZnO:Al)結構紫外線偵測器，此異質結構之紫外線偵測器在逆偏壓5 V時，有低的漏電流約6.3 pA和高的紫外線(360 nm)-可見光(400 nm)拒斥比約兩個數量級以上。在無外加偏壓和其他背景光下，量測出此元件有極大的動態電阻值 (dynamic resistance)使得元件有極小的熱雜訊強度密度(thermal noise power density about) 大約為8.68×10-33 A2/Hz。在有逆偏壓下，元件以1/f型式展現出來，此時元件之雜訊強度密度約為4.89×10-26 A2/Hz，此低的雜訊強度密度使得元件有高的偵測度大約為1.66×1011 cmHz1/2W-1。

Zinc oxide is an II-VI semiconductor, which belongs to the wurtzite hexagonal structure. ZnO is one of the most attractive semiconductor materials for photonic and electronic applications. It has been studied as the blue/ultraviolet light-emitting diodes due to its properties of wide bandgap of 3.37 eV, large exciton binding energy of 60 meV. Moreover, applications of the ZnO ultraviolet photodetectors have been intensively developed due to its simple fabrication and lower cost. In general, ZnO films have been grown by sputtering, Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD). In this study, a novel vapor cooling condensation technique was used to deposit high quality i-ZnO films and to fabricate resulted p-GaN/i-ZnO/n-ZnO:Al (p-i-n) UV photodetectors. The heterostructed p-i-n photodetectors biased at a -5 V had a low dark current 6.3 pA and a high ultraviolet (360 nm)-visible (400 nm) rejection ratio of 5.04102. Without applied bias and external photo flux, the large dynamic resistance ensured low thermal noise power density about 8.68×10-33 A2/Hz. With 5 V reverse bias, the low noise power density exhibits a 1/f-type behavior about 4.89×10-26 A2/Hz and the high detectivity of 1.66×1011 cm Hz1/2W-1 was achieved.

Content
中文摘要	II
Abstract	III
Acknowledgements	V
Content	VI
Figures Captions	IX
Table Captions	XI
Chapter 1 Introduction	1
1.1. Introduction	   1
1.2. Organization of this dissertation	4
Chapter 2 Background Theory	6
2.1. Theory of photodetectors	6
2.1.1. Operation principle	6
2.2. Theoretical analysis of the p-i-n photodetector	 7
2.2.1 Responsivity and quantum efficiency theory   	 7
2.2.2 Responsivity and quantum efficiency calculate	 8
2.3.	Introduction of low frequency noise	   10
2.3.1.	Theory of low frequency noise	11
2.3.1.1.	Johnson-Nyquist noise of low frequency noise 12
2.3.1.2.	Flicker noise   13
Chapter 3 Fabrication of the devices	18
3.1. Vapor cooling condensation method	18
3.1.1. Review of vapor cooling condensation method	18
3.1.2. Vapor cooling condensation method in this experiment  19
3.2. p-i-n nanostructure heterojunction fabrication process  19
Chapter 4 Measurement and Results	30
4.1. Photoluminescence characterization of ZnO p-i-n photodetectors	30
4.2 Current-voltage characterization of ZnO p-i-n photodetector	30
4.2.1 Darkcurrent and dynamic resistance of ZnO p-i-n photodetector	30
4.2.2 Spectral photoresponsivity characterization of ZnO p-i-n photodetectors	31
4.2.3 Spectral external quantum efficiency characterization of ZnO p-i-n photodetector	32
4.3 Noise measurement results of ZnO p-i-n photodetector 32
4.3.1 The Johnson-Nyquist noise measurement results of ZnO p-i-n photodetector	32
4.3.2 The flicker noise measurement results of ZnO p-i-n photodetector	33
Chapter 5 Conclusion	42
References	44

Figures Captions
Figure 1.1 Application for UV photodetectors: (a) UV astronomy, (b) solar blind detector, (c) flame detection and engine monitoring, (d) underwater UV communications, (e) chemical/biological battlefield reagent detector, (f) space communications secure from Earth	5
Figure 2.1 Processes of intrinsic photoexcitation from band to band, and extrinsic photoexcitation between impurity level and band.	15
Figure 2.2 Operation of p-i-n photodetector. (a) Cross-sectional view of p-i-n photodetector. (b) Energy-band diagram under reverse bias. (c) Carrier generation characteristics.	16
Figure 2.3 Schematic illustration of the responsivity of ideal and real photodetectors.	17
Figure 3.1 Inert-gas evaporation nanoparticles deposition system	24
Figure 3.2 Equipment setup of vapor cooling condensation evaporation system	25
Figure 3.3 Rising temperature condition	26
Figure 3.4 A schematic process for p-i-n heterostructure	29
Figure 4.1 The room temperature PL spectrum of the i-ZnO film.	35
Figure 4.2 Current-voltage characteristics and dynamic resistance of p-GaN/i-ZnO/n-ZnO:Al photodetectors.	36
Figure 4.3 The spectral photoesponsivity of p-GaN/i-ZnO/n-ZnO:Al photodetectors.	37
Figure 4.4 The spectral external quantum efficiency of p-GaN/i-ZnO/n-ZnO:Al photodetectors.	39
Figure 4.5 Noise power density measured as a function of frequency for different bias voltage.	41

Table Captions
Table 2.1 Typical values of gain for common photodetectors	15
Table 4.1 The UV(360 nm)-VIS(400 nm) rejection ratio of p-GaN/i-ZnO/n-ZnO:Al photodetectors.	38
Table 4.2 The peak external quantum efficiency(%) at 360 nm of p-GaN/i-ZnO/n-ZnO:Al photodetectors.	40
                                    

Chapter 1
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Chapter 3
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Chapter 4
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