本實驗採取熱蒸鍍法在不同的蒸發源到基板距離（3cm～8cm）將氧化鋅樣品成長在矽基板及玻璃基板，將所有剛成長好的樣品分別在固定溫度600℃、通入氧氣及氬氣環境下加熱，利用5公分距離成長在矽基板上的樣品做相同氧壓力不同氧化溫度（450℃～800℃）及相同600℃氧化溫度不同氧壓力（2Torr～760Torr）處理，並利用掃描式電子顯微鏡(scanning electron microscope)觀察所成長的氧化鋅結構的變化。以光激發螢光(photoluminescence，PL)實驗分析隨著氧化鋅結構的變化，PL光譜訊號紫外光UV部分與可見綠光GR部份之間的改變。
由本實驗發現基板表面較粗糙可沉積較多的氧化鋅，而剛成長好的樣品為ZnOx（x＜1）沉積在基板上形成非晶質的結構，並無PL光譜訊號。沉積在矽基板樣品經相同條件下氧化處理，以5公分距離成長可得較均勻的奈米桿狀結構（nanorod），UV/GR值最大表示有最佳品質。以不同距離成長的樣品在600℃氬氣環境下退火處理並無奈米結構出現，只有可見綠光GR部份的PL光譜訊號。
接著以5公分距離成長的樣品做不同溫度與壓力的氧化處理，發現在600℃為最佳氧化溫度，在370Torr氧壓力時有較均勻的奈米結構成長。最後將以氧化後的樣品再做退火處理，發現紫外光UV部分訊號可被消除，並在原本結構頂端成長出奈米線，其真正的原因將有待研究。

In this study, thermal evaporation method was used to fabricate ZnO nanostructure on Si and glass substrate for different growth distances (3～8cm) at different temperature (450℃～800℃) or/and different oxygen pressure (2～760Torr). The variation of structure were measured by scanning electron microcopy (SEM) and the optical properties were examined by photoluminescence (PL) spectra.
The as-grown sample shows insignificant PL signal due to the amorphous ZnO which developed from ZnOx (x＜1). For the samples grown at different growth distance but the same oxidization processes (600℃,1atm oxygen pressure), we find the Zn/Si sample with 5 cm growth height shows uniform nanorod structure in the SEM image and the ratio of ultra violate (UV) PL intensity and green region (GR) PL intensity (UV/GR) is maximum, indicating the best quality. After samples grown at different growth distance were annealed argon environment at 600℃,the samples do not show nanorod image and only GR peak in PL spectrum.
From the SEM and PL measurement we find that 600℃ is the optimum oxidation temperature and the ZnO nanostructure arises as the growth oxygen pressure is 370 Torr. Re-annealing the oxidized sample under argon gas, the UV PL signal disappears.

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