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研究生： 葉淳
Jap, Franco
論文名稱： 氧化鋁基板處理對鎳鉻矽薄膜電阻特性探討之研究
Effect of Alumina Substrate Pretreatment on the Characteristics of NiCrSi Thin Film Resistor
指導教授： 李文熙
Lee, Wen-Hsi
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 電機工程學系
Department of Electrical Engineering
論文出版年： 2014
畢業學年度： 102
語文別： 英文
論文頁數： 74
中文關鍵詞： 直流磁控濺鍍 、射頻磁控濺鍍 、薄膜電阻 、鎳鉻矽 、氧化鋁
外文關鍵詞： DC magnetron sputtering, RF magnetron sputtering, thin film resistors, Ni-Cr-Si, Al2O3
相關次數： 點閱：104  下載：0 
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    • 本研究是為了在兩種氧化鋁基板（Leatec與CeramTec）尋找鎳鉻矽薄膜的最佳條件。因為一般的氧化鋁基板的表面粗糙度是非常高的，此研究主要找出氧化鋁薄膜的最佳沉積條件，以改善其表面粗糙度，因為表面粗糙度對鎳鉻矽薄膜為有極大影響。
    首先鎳鉻矽薄膜在不同濺射功率和不同薄膜厚度的電性進行探討，以鎳鉻矽薄膜未經處理的和預處理的氧化鋁基板之間的關係。在鎳鉻矽薄膜的實驗中用濺鍍功率增加，其厚度也會增加，另一方面，膜厚度的增加將導致電阻降低。提高在退火溫度會使電阻也增加，而直流磁控濺鍍5W-20分鐘的電阻比射頻磁控濺鍍40W-30分鐘高得多。退火溫度上升，使TCR去朝正趨勢，而在射頻磁控濺鍍 40W-30分鐘的條件下，退火溫度350℃，退火時間為4h，有最穩定的TCR，在Leatec基板上沉積鎳鉻矽薄膜之最佳條件其TCR值為7ppm/℃。通過原子力顯微鏡可以發現，氧化鋁膜厚度的增加，在氧化鋁基板的表面粗糙度有明顯的降低，而氧化鋁基板具有較高的表面能量將導致鎳鉻矽薄膜較不容易沉積在基板上。氧化鋁薄膜在氬氣/氧氣流量為5/55 sccm，未退火的時具有最佳的表面能為41 J/m2。

    This research is about finding the best condition of Ni-Cr-Si thin film on two kinds of alumina substrate (Leatec and Ceramtec). Because the general alumina substrate’s surface roughness is very high, this study intends to find the best condition of aluminum oxide thin film as it was found to have a profound effect to amend its surface roughness.
    Examination on the changes in electrical properties of Ni-Cr-Si thin films at different sputtering power and different thin film thickness were done to identify the relationship between untreated and pretreated alumina substrate to Ni-Cr-Si films. In the experiment of Ni-Cr-Si thin film can be found with the increase of sputtering power, its thickness will also increase, in the other hand, increase of film thickness will result in the decrease in resistance. Increase in annealing temperature will make resistance also increases, while the resistance of DC 5W-20minutes is much higher than RF 40W-30minutes. The increase in annealing temperature will makes TCR to go towards positive trends, with the conditions of RF 40W-30 minutes, annealing temperature 350 ℃ and annealing time 4 hours as the best condition for stable TCR, Leatec substrate that has been coated with Ni-Cr-Si thin film has better electrical properties, its value is 7 ppm/℃. Aluminum thin film at Ar/O2 flow rate of 55/5 sccm, unannealed, has the best surface energy at 41 J/m2. Through AFM can be found that with the increase of aluminum oxide film thickness, surface roughness of the alumina substrate will decrease. Alumina substrate with higher surface energy will result in more difficult dep osition of thin film. Using alumina substrate (Leatec) that has been coated with aluminum oxide film to be deposited to Ni-Cr-Si film can effectively reduce the resistance distribution.

    摘要 I ABSTRACT II ACKNOWLEDGEMENTS III CONTENTS IV LIST OF FIGURES VI LIST OF TABLES X CHAPTER 1 INTRODUCTION 1 1-1 Preface 1 1-2 Research Motivation and Purpose 2 CHAPTER 2 LITERATURE REVIEW 3 2-1 Thin Film Chip Resistor 3 2-1-1 The Production Process of Thin Film Chip Resistor 4 2-2 Sputtering Deposition 5 2-2-1 Sputtering Principles 6 2-2-2 Plasma 7 2-2-3 Glow Discharge 9 2-2-4 Sputtering Methods 11 2-3 Film Nucleation Growth Theory 13 2-4 The Electric Property and Resistance of Thin Film 18 2-4-1 Sheet Resistance 19 2-4-2 Electrical Resistivity 20 2-4-3 Temperature Coefficient of Resistance (TCR) 20 2-4-4 Measurement of Thin Film Resistor 21 2-5 Effects of Sputtering Process Parameters 24 2-5-1 Working Pressure 25 2-5-2 Sputtering Power 26 2-5-3 Sputtering Time 26 CHAPTER 3 EXPERIMENT METHOD 28 3-1 Experiment Process Flow Chart 28 3-2 Experiment Materials 30 3-3 Coating Process 31 3-3-1 Sputtering System: 31 3-3-2 Coating Parameters 32 3-3-3 Coating Procedures 33 3-3-4 Coating Heat Treatment Step 34 3-4 Electrical Measurements and Structural Analysis of the Film 35 3-4-1 Deposition Rates 35 3-4-2 Surface Resistance Measurement 35 3-4-3 Resistance Conversion 36 3-4-4 Coefficients Measured for the Temperature Resistance 36 3-4-5 XRD Structure Analysis 37 3-4-6 Field Emission Scanning Electron Microscope (FE-SEM) Analysis of the Surface Topography 39 3-4-7 Static Contact Angle Measurement Instrument 41 3-4-8 Atomic Force Microscopy (AFM) 41 CHAPTER 4 RESULTS and discussion 44 4-1 NiCrSi Thin Film Experiments 44 4-1-1 Relationship between Thin Film Thickness and Electrical Resistivity 44 4-1-2. Analysis of NiCrSi thin film on Different Alumina Substrate 50 4-2 Aluminum Oxide Thin Film Experiments 53 4-2-1 XRD Phase Composition Analysis 53 4-2-2 SEM Microstructure Analysis 56 4-2-3 AFM Analysis 61 4-2-4 Surface Energy Analysis 62 4-3 Comparison of NiCrSi thin film on Untreated and Pretreated Substrate 64 CHAPTER 5 CONCLUSION 69 REFERENCES 70

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