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研究生：	彭彥諮 Peng, Yen-Tzu
論文名稱：	製作介電陶瓷基板材料Mg_1.975Mn0.025SiO4與Mg(2-x)Co_xSiO_4之微波特性分析比較 Comparison of Microwave Characteristics of Dielectric Ceramic Materials Mg_1.975Mn0.025SiO_4 and Mg2-xCoSiO_4
指導教授：	李炳鈞 Li, Bing-Jing
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電機工程學系 Department of Electrical Engineering
論文出版年：	2024
畢業學年度：	112
語文別：	中文
論文頁數：	122
中文關鍵詞：	微波介電陶瓷材料、基板濾波器、Mg_1.975Mn_0.025SiO_4 、Mg_(2-x)Co_x SiO_4
外文關鍵詞：	dielectric ceramic material, filter, Mg_1.975Mn_0.025SiO_4, Mg_(2-x)Co_x SiO_4
相關次數：	點閱：36 下載：7
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微波介電陶瓷在現代通信中被用作諧振器、濾波器、介質天線、介質導波迴路等，對作爲通訊設備關鍵材料的介質陶瓷性能參數有更高的要求，即特低的介電損失(Q×f 值>100,000GHz)、低介電常數(5<〖 ε〗_r<15)及趨近於零的共振頻率溫度飄移係數(τ_f)。本研究選用Mg_2 SiO_4陶瓷介電陶瓷進行改良使其擁有更高的Q×f值，以得到更好的介電特性。實驗製作分別使用MnO、CoO做微量取代MgO來製作〖 Mg〗_1.975 Mn_0.025 SiO_(4 )和Mg_(2-x) Co_x SiO_4 (x=0.04-0.12)，本研究論文中製作方式皆使用固相燒結法製作。經過實驗結果發現〖 Mg〗_1.975 Mn_0.025 SiO_(4 )(MMS) 在燒結溫度1250℃時擁有最佳的視密度與微波介電特性(ε_r≈6.7,Q×f≈1.6×10^5GHz, τ_f≈-75.6ppm/℃)，與文獻中在氮氣環境下的製作比較後發現，Q×f值低了200,000 GHz，其於介電特性參數如相對介電常數和共振頻率溫度飄移係數與文獻中差異不大，造成Q×f值較低之可能原因為燒結方式、粉末原料、實驗環境不同所導致，但結果仍符合本研究目標Q×f 值>100,000GHz。在符合研究設定目標的前提之下，將MMS中的MnO置換成CoO，經過EDS量測後確認〖 Co〗^(2+)確實對Mg_2 SiO_4中的〖 Mg〗^(2+)有進行取代，其比例x=0.08燒結溫度為1250℃時，擁有最佳微波介電特性(Q×f~190,000 GHz、ε_r= 6.66〖、τ〗_f＝-22 ppm/°C)，並且與〖 Mg〗_1.975 Mn_0.025 SiO_(4 )相比是比較優異的製備高性能微波介電陶瓷材料。最後以〖 Mg〗_1.975 Mn_0.025 SiO_(4 )和Mg_(2-x) Co_x SiO_4 (x=0.08)製作陶瓷基板並設計中心頻率為3.5 GHz之帶通濾波器，用來驗證其在微波通訊領域之實用性，經過量測後發現，兩種基板的帶通濾波器具有以下特點：中心頻率(f_0 )在3.5 GHz、反射損耗(S_11)大於10dB、插入損耗(S_21)小於3dB、頻寬比大於3.5%。其中Mg_(2-x) Co_x SiO_4(=0.08)基板之濾波器比起〖 Mg〗_1.975 Mn_0.025 SiO_(4 )基板反射損耗較小約2.64dB、插入損耗較小0.2dB、頻寬也較高，故MCS(x=0.08)是比較好的微波介電陶瓷基板材料。

The objective of this study is to enhance the dielectric properties of Mg_2 SiO_4 ceramics by improving their Q×fvalues. Experimental samples were prepared by substituting MgO with trace amounts of MnO and CoO to form Mg_1.975 Mn_0.025 SiO_(4 )(MMS) and Mg_(2-x) Co_x SiO_4 SiO_4 (x=0.04-0.12) using the solid-state sintering in air method. The experimental results indicated that the MMS sintered at 1250°C exhibited the most optimal bulk density(3.12g/m3) and microwave dielectric properties ( ε_r≈6.7, Q×f≈1.6×10^5GHz, τ_f≈-75.6ppm/℃ ). Mg_(2-x) Co_x SiO_4 (x=0.08) sintered at 1250°C exhibited superior microwave dielectric properties (Q×f~190,000 GHz、ε_r= 6.66〖、τ〗_f＝-22 ppm/°C ). The properties of MCS exhibited superior characteristics compared to those of MMS. Finally, the band-pass filters were fabricated on Mg_1.975 Mn_0.025 SiO_(4 )and on Mg_(2-x) Co_x SiO_4 (x=0.08) ceramic substrates ,respectively. Both filters had a center frequency (f_0) of 3.5 GHz, reflection loss (S_11) greater than 10 dB, insertion loss (S_21) less than 3 dB, and a bandwidth ratio greater than 3.5%. In comparison to the MMS filter, the Mg_(2-x) Co_x SiO_4 (x=0.08) filter exhibits a lower reflection loss by 2.64 dB, a lower insertion loss by 0.2 dB, and an enhanced bandwidth. Therefore, MCS (x=0.08) represents an excellent microwave dielectric ceramic substrate material in comparison to Mg_1.975 Mn_0.025 SiO_4(MMS).

摘要	ii
第一章	緒論	1
1-1	研究背景與動機	1
1-2	研究目的與方法	3
第二章	介電陶瓷材料相關理論	5
2-1	介電陶瓷材料	5
2-2	介電原理	5
2-3	影響介電陶瓷材料特性之因素	8
2-3-1	品質因數(Q )	9
2-3-2	相對介電常數(εr)	11
2-3-3	介電常數頻率溫度飄移係數(τε)與共振頻率溫度飄移係數(τf)	12
2-4	介電陶瓷材料製作	14
2-4-1	介電陶瓷材料燒結原理	14
2-4-2	介電材料燒結種類	17
2-4-3	固相反應法(Solid-state method)	18
2-5	介電陶瓷材料微波特性	19
2-5-1	常見介電陶瓷	19
2-5-2	Mg2SiO4	19
2-5-3	添加CoO之相關文獻	21
2-6	陶瓷基板與陶瓷介電共振器	24
第三章	濾波器與微帶線相關理論	26
3-1	濾波器原理	26
3-1-1	濾波器簡介	26
3-1-2	濾波器種類	26
3-1-3	濾波器頻率響應種類	28
3-1-4	濾波器微波特性參數	29
3-2	微帶線原理	30
3-2-1	微帶傳輸線簡介	30
3-2-2	微帶線之傳輸模態	31
3-2-3	微帶線之各項參數公式計算及考量	32
3-2-4	微帶線之不連續效應	34
3-3	微帶線共振器種類	36
3-3-1	λ/4 短路微帶線共振器	37
3-3-2	λ/2 開路微帶線共振器	37
3-4	共振器間的耦合形式	38
3-4-1	電場耦合	39
3-4-2	磁場耦合	40
3-4-3	混合耦合	42
3-5	λ /4 阻抗轉換器與開路殘斷	44
第四章	實驗方法與規劃	46
4-1	粉體原料	46
4-2	固態反應法與陶瓷體之製作	46
4-2-1	粉體製作	48
4-2-2	塊體製作	49
4-3	實驗量測	51
4-3-1	XRD量測	51
4-3-2	SEM量測	53
4-3-3	EDS量測	55
4-3-4	視密度量測	55
4-3-5	微波介電特性量測	57
4-3-6	共振頻率溫度飄移係數量測	61
4-4	濾波器設計、模擬、實作與量測	61
4-4-1	濾波器電路參數設計分析	61
4-4-2	濾波器之模擬分析設計	63
4-4-3	濾波器之實作	65
4-4-4	濾波器之量測與誤差	65
4-5	實驗規劃	65
4-5-1	固相燒結法Mg1.975Mn0.025SiO4 之微波介電特性	65
4-5-2	固相燒結法 Mg2-xCoxSiO4之微波介電特性	66
4-5-3	製作濾波器並量測不同材料下之特性變化	67
第五章	實驗結果與討論	68
5-1	 Mg1.975Mn0.025SiO4 之特性探討	68
5-1-1	 Mg1.975Mn0.025SiO4  之視密度分析	68
5-1-2	 Mg1.975Mn0.025SiO4 之XRD分析	69
5-1-3	 Mg1.975Mn0.025SiO4 之SEM分析	71
5-1-4	 Mg1.975Mn0.025SiO4 之 Q×f 值分析	73
5-1-5	 Mg1.975Mn0.025SiO4 之相對介電常數分析	74
5-1-6	 Mg1.975Mn0.025SiO4 之共振頻率溫度飄移係數分析	75
5-1-7	總結	76
5-2	Mg2-xCoxSiO4之特性探討	77
5-2-1	Mg2-xCoxSiO4之視密度分析	77
5-2-2	Mg2-xCoxSiO4之XRD分析	79
5-2-3	Mg2-xCoxSiO4之SEM分析	80
5-2-4	Mg2-xCoxSiO4之EDS分析	82
5-2-5	Mg2-xCoxSiO4之 Q×f 值分析	84
5-2-6	Mg2-xCoxSiO4之相對介電常數分析	86
5-2-7	Mg2-xCoxSiO4之共振頻率溫度飄移係數分析	86
5-2-8	總結	87
5-3	濾波器模擬與實作之探討	88
5-3-1	 Mg1.975Mn0.025SiO4 基板濾波器之模擬與實作量測分析	88
5-3-2	Mg2-xCoxSiO4(x=0.08)基板濾波器之模擬與實作量測分析	90
5-3-3	總結	93
第六章	結論與未來方向	94
6-1	結論	94
6-2	未來方向	95
參考文獻	96
                                    

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