本論文討論分析與研製薄膜塊體聲波共振器(Film Bulk Acoustic-wave Resonator FBAR)，FBAR的結構為在矽基板上以白金為底電極，鋁為上電極，以反應式射頻磁控濺鍍機成長高C軸優選取向的氮化鋁薄膜，以激發出縱波並於薄膜表面處產生反射。本論文的FABR結構為背向蝕刻矽基板產生聲波空腔，使元件於氮化鋁薄膜內產生奇、偶數模態的串聯共振頻率和並聯共振頻率，且氮化鋁薄膜的厚度減少時，則共振頻率會隨之上升。

　　實驗為探討共振器不同電極的形狀及面積對寄生模態與共振時的輸入阻抗值的影響，結果顯示電極為非對稱的形狀可抑制寄生模態的產生，電極的面積越小則共振時的輸入阻抗值越大。利用ADS模擬軟體以萃取FBAR元件於基頻共振頻率的MBVD等效電路參數值，考慮矽基板的寄生電容與電阻效應，可使模擬值與量測值接近，並將兩者的有效機電耦合係數 、Q值作比較。

　The paper presents the analysis and fabrication of thin film bulk acoustic wave resonator(FBAR). The FBAR structures are made of piezoelectric aluminum nitride layers which are fabricated on silicon wafer using the technique of RF magnetron sputtering of . Aluminum and platinum are the top and bottom electrodes. A longitudinal bulk wave can be excited within the highly C-axis-oriented piezoelectric AlN film and reflects from the surface boundaries of the AlN membrane. Similar to an acoustical cavity, the FBAR
structure exhibits parallel and series electrical resonance responses, corresponding to
even- and odd-order modes, and decreasing the thickness of the AlN film increases the resonance frequency. The results show that the shape of top electrodes can affect the resonance of the FBAR structure with spurious modes.　Moreover, less symmetric electrodes can inhibit spurious resonance modes. Effects of resonator size on input impedance are also discussed. The Modified Butterworth-Van Dyke model basing on the fundamental resonant frequency response of resonators is used for the analysis of the structure. The resonant frequencies, effective electromechanical coupling coefficients( ) and quality factors both from the modeling and experimental measurements will be compared and discussed.

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