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| 研究生： |
劉業繡 Liu, Yeh-Hsiu |
|---|---|
| 論文名稱： |
高鉛與共晶錫鉛複合銲錫隆點與底層金屬之界面反應及電遷移行為 Electromigration and Interfacial Reaction between 5Sn-95Pb and 63Sn-37Pb Composite Solder and Under Bump Metallurgy |
| 指導教授： |
林光隆
Lin, Kwang-Lung |
| 學位類別： |
博士 Doctor |
| 系所名稱： |
工學院 - 材料科學及工程學系 Department of Materials Science and Engineering |
| 論文出版年： | 2005 |
| 畢業學年度： | 93 |
| 語文別： | 中文 |
| 論文頁數： | 85 |
| 中文關鍵詞： | 覆晶接合 、電遷移 、界金屬化合物 |
| 外文關鍵詞： | Intermetallic compound, Flip chip, Electromigration |
| 相關次數： | 點閱：90 下載：5 |
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中文摘要
在一般高溫應用環境下，銲錫隆點底層金屬與錫反應形成介金屬化合物將會導致元件產生嚴重的可靠度問題。覆晶結構中常使用共晶錫鉛或是高鉛銲錫與Ni(V)系統組合，銲錫隆點剪力強度與高溫儲存實驗以及熱循環或是高溫操作壽命測試經常被用來評估銲錫隆點底層金屬之消耗速率及電遷移行為。
本研究中首先測試5Sn-95Pb銲錫隆點在高溫時效後之剪力強度，研究結果發現有兩種化合物在界面生成，分別為Cu3Sn 與AlxNiy,其中Cu3Sn位於銲錫合金與Ni(V)層之間而AlxNiy則位於Ni(V)與鋁導線間。研究結果顯示高溫時效熱處理後，Cu3Sn之生成並不影響銲錫隆點之剪力強度，約維持在27–30克之間，然而經過30次重複重流後之銲錫隆點剪力強度約略降為25克，此乃由於AlxNiy的生成所導致。同時也可以發現經過剪力測試後之銲錫隆點大部份呈現階梯狀滑移之外觀。
本研究其次對覆晶接合之構裝體進行多次重流試驗，並分析複合銲錫隆點對底層金屬及基材上之金屬可能發生之界面反應。本研究中，在隆點與底層金屬間生成之化合物主要是Cu3Sn，而在隆點與基材金屬層間生成之化合物則為Ni3Sn4。然而經過5次重流後Cu3Sn轉變成Cu6Sn5，光學顯微鏡及EDS分析顯示共晶錫鉛中之錫原子會沿著5Sn-95Pb銲錫隆點表面快速擴散至銲錫合金與底層金屬間之界面，此外Ni(V)中的鎳原子亦會析出形成(Cu,Ni)6Sn5，相同地Ni3Sn4也會轉變成(Ni,Cu)3Sn4，銅是由底層金屬所提供。
電遷移試驗係探討不同方向之電流對銲錫隆點之影響，在150oC、電流密度5×103A/cm2實驗條件下，研究結果發現以Al/Ni(V)/Cu為陰極之銲錫隆點最易失效。銲錫合金中之鉛原子其移動方向與電子流方向一致。Ni(V)中的鎳原子受電子流之影響而擴散至Cu-Sn介金屬內形成Cu-Ni-Sn三元化合物。鎳原子的消耗使得鋁原子在高電流密度下衝破釩金屬層，造成銲錫隆點電性之失效。研究結果也顯示，銲錫隆點内之電流密度分佈對銲錫合金中之富錫相造成長條狀及圓柱狀兩種型態。
Abstract
In high temperature applications, the conversion of the under metallurgy (UBM) into UBM-Sn intermetallics can ultimately limit the reliability of flip chip components. The flip chip structures employed are eutectic or high-lead Sn/Pb solder jointed to Ni(V). The shear strength of the bump was investigated after high temperature aging and thermal cycling. The bump was also investigated for electromigration behavior. The interfacial interaction between UBM and solder was explored.
It was found that two kinds of intermetallic compound, Cu3Sn and AlxNiy, were formed at the interface. The Cu3Sn was formed between the solder and Ni(V) layer while AlxNiy was formed between Ni(V) and Al layer. The formation of the Cu3Sn compound will not affect the shear strength, 27–30 g, of the solder bump even after a high temperature long time aging test. However, the shear strength after the 30th reflow drops to less than 25 g, ascribed to the formation of a brittle compound AlxNiy. Meanwhile, the shear fractured solder bump exhibits stepwise appearance.
After assembly, the interfacial reactions between the 5Sn-95Pb/63Sn-37Pb composite solder and Al/Ni(V)/Cu under-bump metallization (UBM) as well as the substrate metallization were systematically investigated during the multiple reflow process. The major interfacial intermetallic compound (IMC) formed at UBM/solder interface is Cu3Sn, while it is Ni3Sn4 at UBM/substrate interface. However, the Cu3Sn intermetallic compound would translate into Cu6Sn5 after 5 reflow cycles. The results of Optical Microscope (OM) and Energy Dispersive Spectrometer X-ray (EDS) investigation show that Sn from the eutectic solder (63Sn/37Pb) migrates along the surface of 5Sn/95Pb solder to UBM/solder interface. Also, the Ni from Ni(V) layer reacted with Sn to form (Cu,Ni)6Sn5 intermetallic compound after 5 reflow cycles. According to the EDS analysis, the intermetallic compound would transform from Ni3Sn4 to (Ni,Cu)3Sn4 in the solder/substrate side after 10 reflow cycles. The results of the cross section investigation indicate that Cu would diffuse from UBM to substrate during multiple reflow process.
The electromigration-induced failure in the composite solder bump consisting of 5Sn-95Pb on the chip side and 63Sn-37Pb on the substrate side was studied. It was observed that failure occurred in the solder joints in a downward electron flow with UBM as cathode. The Pb atoms were found to move in the same direction as with the electron current flow. During electromigration, Ni in the Ni(V) layer dissolved into the Cu-Sn IMC to form the Cu-Ni-Sn ternary IMC. The vanadium in the Ni(V) was broken under current stressing of 1711 hours due to the completely consumed of Ni in the Ni(V) layer. The Sn-rich phase of the solder bumps showed gradual streaking and reorientation upon current stressing. The mechanism of reorientation of Sn-rich phases in the solder was discussed.
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校內：立即公開校外：2005-07-29公開