本實驗以射頻磁控濺鍍機沉積錳摻雜量分別為0mole%、0.5mole%、1mole%、2mole%、4mole%和8mole%的Ba0.5Sr0.5TiO3薄膜於Pt/SiO2/Si(100)基板，製作成MIM結構之薄膜電容，鈦酸鍶鋇介電層的膜厚約430nm，進行探討其錳摻雜對於鈦酸鍶鋇薄膜之結晶相和電性之影響與特性分析。
在晶相分析方面，本實驗將以XRD量測，並以Winfit軟體輔助，以及SEM量測其薄膜表面形態影像以及EDS做成分分析；電性方面將由Agilent 4980A阻抗分析儀來做C-V量測，再換算成相對介電常數，以及Agilent E5270B電壓電流量測儀來量測I-V關係，觀察其漏電流的大小。
本實驗經由XRD量測可知經過錳摻雜後的BST仍然保持鈣鈦礦結構，其中機製為Mn2+離子取代BST晶格中之Ti4+離子。而I-V量測可得知在錳摻雜量在4mole%時有最小之漏電流密度，電場強度在20~120(kV/cm)之範圍皆為10-9(A/cm2)等級，然而在C-V量測顯示電容值與相對介電常數卻呈現隨著摻雜量愈高而減少的趨勢；另外根據本實驗SEM分析結果也顯示當摻雜量越多時，晶粒呈現越來越小的趨勢，這也指出晶粒變小似乎有利於降低漏電流，同時也是使介電特性惡化的原因。

In this study, the Mn-doped Ba0.5Sr0.5TiO3 high dielectric thin films with Mn content of 0mole%, 0.5mole%, 1mole%, 2mole%, 4mole%, and 8mole% were deposited by rf magnetron sputter on Pt/SiO2/Si substrates. MIM structures were fabricated for measurements. Discussion and analysis of the influence of Mn dopant on the crystalliza and electrical properties of the BST thin film were provided. The crystallization and microstructure were measured by using XRD and SEM. Electrical properties of C-V were obtained by using Agilent 4980A impedance analyzer, and I-V characteristics by using Agilent E5270B. The relative dielectric constants were calculated. The results showed that Mn2+ ions occupied Ti4+ sites of BST but did not its perovskite structure. Doping of Mn in BST thin film was found to restrain grain growth of BST from the morphology of SEM measurement. The lowest leakage current was found for 4 mole% of Mn in the BST thin film, which was in the 10-9(A/cm2) order for electric field of 20~120(kV/cm). Howerevr, dielectric constant and capacitance was decreased with Mn-doping. In conclusion, low leakage current density can be obtained by adding Mn in BST thin film.

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