近年來的實驗和理論證明了鉍化碲材料具有強自旋-軌道交互作用導致物質新的相變，稱作拓樸絕緣體。本研究成功的利用MBE系統在sapphire(0001)基板上成長結構良好的Bi2Te3薄膜，並以ARPES證明了薄膜確實為拓樸絕緣體。隨著成長溫度升高至370C，發現材料的電子特性會有n型至P型的轉變，因為溫度的升高造成反位缺陷 含量增加導致受體載子的貢獻，高於370C卻轉變為n型，從XPS的比例測定得知薄膜隨著溫度從Bi-rich(Te<63.55%)轉變為Te-rich(Te>63.55%)，在Te-rich的條件下，反位缺陷 則為主導貢獻施體載子。
在成長溫度380C下改變鍍率比，XPS量測發現，改變鍍率比可直接控制薄膜的Te含量，使得有Te-rich至Bi-rich的轉變，ARPES量測發現能帶結構亦有n型至P型的變化。

Recent experimentals and theories suggest that bismuth-telluride material has a strong spin-orbit coupling to produce a new phase of matter, so called topological insulator. In this study, High-quality Bi2Te3 thin film were grown on sapphire(0001) substrate with molecular beam epitaxy (MBE). ARPES(angle-resolved photoemission spectroscopy) measurements prove that the Bi2Te3 thin film is topological insulators. With growth temperature increasing to 370C, the electric properties of material has transition from n-type to p-type owing to enhancement of the acceptor in anti-site defect ( ). The gowth temperature increase to above 370C, the electric properties of film show n-type. XPS measurements show that ratio of film varies from Bi-rich(Te<63.55%)to Te-rich (Te>63.55%) with increasing growth temperature. In Te-rich condition, anti-site defects dominant in the material and provide the donor.
In the variation of flux ratio at the growth temperature of 380C, XPS measurements show that the Te concentration can be adjusted with changing the flux ratio, which result in the ratio of film from Te-rich to Bi-rich. ARPES measurements show the band structure transition from n-type to p-type.

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