卑金屬積層陶瓷電容器（BME MLCC）在還原氣氛下燒結時，必須添加Mn或Ca來避免因還原作用所造成之半導化及絕緣電阻下降。但此類添加劑在還原氣氛下燒結時會生成氧空缺(vacancy)，而使得元件之電性劣化，可靠度降低。為解決上述可靠度之問題，鈦酸鋇基中添加Dy、Nb可有效改善卑金屬積層陶瓷電容器在高溫及直流電場作用下電性之劣化現象。
本實驗初始粉末為 (Ba0.96011Ca0.03988)(Ti0.82089Zr0.17911)O3(簡稱BCTZ)，藉由添加MnO與Nb2O5 將Ba/Ti比例調整為1，添加不同莫爾百分比的Dy2O3，於通入氮氣的還原氣氛爐內，以每分鐘5℃升溫至1320℃，持溫2小時進行燒結。探討添加Dy2O3於還原氣氛下燒結對A/B=1之(Ba,Ca)(Ti,Zr,Mn)O3的取代機制，進而了解此取代機制對電性與微結構之影響。
添加Dy 0.001 mol%時，Dy取代Ti離子，晶格常數上升，並產生富鈦相Ba6Ti17O40，造成液相燒結，促進晶粒成長。電阻方面也因Ba6Ti17O40相的存在以及晶粒粒徑增大，晶界體積分率減少，而造成電阻的劣化。但而介電常數值卻隨著粒徑增大而增加。添加Dy 0.003 mol% ~ 0.01 mol%，Dy主要取代Ba位置，形成電子補償，試片呈現半導化，電阻值急遽下降，使燒結體之介電常數皆相當低。且於升溫過程中形成Dy2Ti2O7產生釘扎作用，使得晶界不易移動，抑制晶粒成長。而原本位於Ba位置的部分Ca離子將強迫佔據Ti位置，使得晶格常數值大幅上升，且Ca離子取代Ti離子時，因氧空缺的產生，得以捕捉更多的電子，使得電阻值下降趨緩。
添加Dy 0.015 mol%時， Dy佔據的位置有逐漸轉向Ti位置的現象，Ba/Ti比例再度減小，晶粒粒徑稍微上升，且因Dy取代Ba位置的量減少，因而取代Ti離子之Ca離子數目減少，晶格常數轉為下降，電阻值亦下降。

In the previous studies, the addition of Mn or Ca in the BME MLCC was used to prevent the occurrence of semiconducting and the deterioration of insulation resistance. However, the addition of anti-redaction additives would generate oxygen vacancies that would lead to low insulation resistance and poor life stability under high electric filed. Generally, Dy and Nb were doped in BaTiO3 to improve the life stability of BME MLCCs during HALT.
The raw materials (Ba0.96011Ca0.03988)(Ti0.82089Zr0.17911) O3（BCTZ）were doped with MnO and Nb2O5 to adjust Ba/Ti = 1. The samples then were added different amount of Dy2O3 and sintered at 1320℃ for 2 h in a reducing atmospheres. This investigation was to elucidate the effects of different addition of Dy2O3 in (Ba,Ca)(Ti,Zr) O3 on the microstructure and electricity properties.
At Dy concentration x = 0.001, Dy occupied B-site and resulted in increasing lattice constant. In this condition, Ti-rich phase Ba6Ti17O40 formed produced and lead to liquid phase sintering and grain growth. Therefore, the insulation resistance deteriorated due to the presence of Ti-rich phase Ba6Ti17O40 and the decrease of the volume fraction of grain boundary. Experimental results reveal the ofεmax increased with increasing grain size. At the doping level of 0.003 mol% to 0.01 mol%, Dy substituted A-site of the BCTZ and resulted in semiconducting at room temperature. During the temperature rose, Dy2Ti2O7 was formed, which suppressed grain growth due to the pinning effect. Some of the Ca ions were forced to occupy the B site, which act as acceptors and lead to increasement of lattice constant. Simultaneously, the formation of oxygen vacancies that can trap more free electrons and slow down the decrease of the insulation resistance. For sample with Doping 0.015 mol%, the lattice constant and insulation resistance become to decreased compared with 0.01mol% doped sample. It indicated that the occupational sites of some Dy ions changed from A site to B site and, correspondingly the amounts Ca ions in B-site decreased.

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